IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4254

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1 IR-Lumineszenzdiode (8 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (8 nm) Lead (Pb) Free Product - RoHS Compliant SFH 424 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Homogene Abstrahlung Typische Peakwellenlänge 8 nm Feuchte-Empfindlichkeitsstufe 2 nach JEDEDC Standard J-STD-2C Anwendungen Schnelle Datenübertragung mit Übertragungsraten bis 1 Mbaud (IR Tastatur, Joystick, Multimedia) Analoge und digitale Hi-Fi Audio- und Videosignalübertragung Batteriebetriebene Geräte (geringe Stromaufnahme) Alarm- und Sicherungssysteme Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen und behandelt werden. Features Homogenous Radiation Pattern Typical Peakwavelength 8 nm Moisture Sensitivity Level 2 according to JEDEDC Standard J-STD-2C Applications High data transmission rate up to 1 Mbaud (IR keyboard, Joystick, Multimedia) Analog and digital Hi-Fi audio and video signal transmission Low power consumption (battery) equipment Alarm and safety equipment Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC and IEC Typ Type Bestellnummer Ordering Code SFH 424 Q611A6462 >4 (typ. 7) Strahlstärkegruppierung 1) ( = ma, t p = 2 ms) Radiant intensity grouping 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel Ω =.1 sr / measured at a solid angle of Ω =.1 sr

2 ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device Grenzwerte (T A = 2 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Stoßstrom Surge current Leistungsaufnahme Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je mm 2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Wert Value T op ; T stg C V R V 7 ma SM 1 A Einheit Unit P tot 12 mw R thja R thjs 3 3 K/W K/W Kennwerte (T A = 2 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 1 ma Spektrale Bandbreite bei % von I max Spectral bandwidth at % of I max = 1 ma Abstrahlwinkel Half angle Wert Value λ peak 8 nm λ 3 nm Einheit Unit ϕ ± 6 Grad deg

3 Kennwerte (T A = 2 C) Characteristics (cont d) Bezeichnung Parameter Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei = 1 ma, R L = Ω Switching times, Ι e from 1% to 9% and from 9% to 1%, = 1 ma, R L = Ω Durchlassspannung Forward voltage = ma, t p = 2 ms = 1 A, t p = 1 µs Sperrstrom Reverse current V R = V Gesamtstrahlungsfluss Total radiant flux = ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, = 1 ma Temperature coefficient of I e or Φ e, = 1 ma Temperaturkoeffizient von V F, = 1 ma Temperature coefficient of V F, = 1 ma Temperaturkoeffizient von λ, = 1 ma Temperature coefficient of λ, = 1 ma A.9 mm 2 L B L W.3.3 mm² t r, t f 12 ns V F V F 1.4 (< 1.7) 2.4 (< 3.) I R Wert Value not designed for reverse operation Einheit Unit V V µa Φ e typ 23 mw TC I. %/K TC V.7 mv/k TC λ +.2 nm/k

4 Strahlstärke I e in Achsrichtung 1) gemessen bei einem Raumwinkel Ω =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Bezeichnung Parameter Werte Values Einheit Unit SFH 424-P SFH 424-Q Strahlstärke Radiant intensity = ma, t p = 2 ms I e min 4 I e max mw/sr mw/sr Strahlstärke Radiant intensity = 1 A, t p = 1 µs I e typ 7 8 mw/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics I rel = f (ϕ) OHL166 ϕ

5 Relative Spectral Emission I rel = f (λ) I rel 1 % Forward Current = f (V F ) Single pulse, t p = 2 µs 1 A OHL1714 nm λ 9 OHL V3 V F Radiant Intensity Single pulse, t p = 2 µs I 1 1 e e (1 ma) I I e I e 1 ma = f ( ) OHL ma 1 Permissible Pulse Handling Capability = f (τ), T A = 2 C, duty cycle D = parameter 1. A t D = T P OHF s1 2 t p t P D = T Max. Permissible Forward Current = f (T A ), R thja = 3 K/W 8 ma OHF C 1 TA

6 Maßzeichnung Package Outlines.2 (.1)....1 (....4). (.2).3 (.12).2 (.8) (.4 (.16)) (.6 (.24)) C 3.1 (.122) 2.9 (.114) Anode 1.2 (.47).7 (.28). (.2) typ..3 (.12) Chipcenter 2.3 (.91) 2.1 (.83) (1 ) 1.3 (.1) 1.1 (.43) A 1. (.39) GPLY72 Maße in mm (inch) / Dimensions in mm (inch). Gurtung / Polarität und Lage Method of Taping / Polarity and Orientation Verpackungseinheit 3/Rolle, ø18 mm oder 1/Rolle, ø33 mm Packing unit 3/reel, ø18 mm or 1/reel, ø33 mm 1. (.9) 4 (.17) 2.4 (.94) 3. (.138) 1.7 (.69) 8.1 (.319) 1.2 (.49) 3.3 (.13) 2 (.79) Maße in mm (inch) / Dimensions in mm (inch)..9 (.3) 1.4 (.).3 (.12) max. OHAY

7 Empfohlenes Lötpaddesign Recommended Solder Pad Design Maße in mm (inch) / Dimensions in mm (inch). Gehäuse hält TTW-Löthitze aus / Package able to withstand TTW-soldering heat

8 Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-STD-2C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-2C) T 3 C C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max 1 s min OHLA687 + C 26 C - C 24 C ± C + C 23 C - C s max Ramp Down 6 K/s (max) 1 s max Ramp Up 3 K/s (max) 2 C s 3 t Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C 1. Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY C C ca 2 K/s K/s 2 K/s 2 K/s Zwangskühlung forced cooling s 2 t

9 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered