GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead (Pb) Free Product - RoHS Compliant SFH Vorläufige Daten / Preliminary Data

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1 GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead (Pb) Free Product - RoHS Compliant SFH 4516 Vorläufige Daten / Preliminary Data Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit UL Version erhältlich Gute spektrale Anpassung an Si-Fotoempfänger Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb Rauchmelder Diskrete Lichtschranken Features Very highly efficient GaAs-LED High reliability UL version available Spectral match with silicon photodetectors Applications IR remote control of hi-fi and TV-sets, video tape recorders, dimmers Remote control for steady and varying intensity Smoke detectors Discrete interrupters Typ Type Bestellnummer Ordering Code SFH 4516 Q65111A38 > 25 (typ. 45) Strahlstärkegruppierung 1) (I F = ma, t p = 2 ms) Radiant Intensity Grouping 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel Ω =.1 sr / measured at a solid angle of Ω =.1 sr

2 Grenzwerte (T A = 25 C) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, t p = μs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance T op ; T stg 4 + C V R 5 V I F ma I FSM 3 A P tot 15 mw R thja 45 K/W Kennwerte (T A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission I F = ma, t p = 2 ms Centroid-Wellenlänge der Strahlung Centroid wavelength I F = ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = ma λ peak 95 nm λ centroid 955 nm Δλ 55 nm Abstrahlwinkel Half angle ϕ ± 17 Grad Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area A.9 mm 2 L B L W.3.3 mm 2 Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top H mm

3 Kennwerte (T A = 25 C) Characteristics (cont d) Schaltzeiten, I e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Ω Switching times, Ι e from % to 9% and from 9% to %, I F = ma, R L = 5 Ω Durchlassspannung Forward voltage I F = ma, t p = 2 ms I F = 1 A, t p = μs Sperrstrom Reverse current V R = 5 V Gesamtstrahlungsfluss Total radiant flux I F = ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, I F = ma Temperature coefficient of I e or Φ e, I F = ma Temperaturkoeffizient von V F, I F = ma Temperature coefficient of V F, I F = ma Temperaturkoeffizient von λ, I F = ma Temperature coefficient of λ, I F = ma t r, t f.5 μs V F 1.3 ( 1.5) V F 1.9 ( 2.5) V V I R.1 ( 1) μa Φ e 2 mw TC I.55 %/K TC V 1.5 mv/k TC λ +.3 nm/k

4 Gruppierung der Strahlstärke I e in Achsrichtung 1) gemessen bei einem Raumwinkel Ω =.1 sr Grouping of Radiant Intensity I e in Axial Direction 1) at a solid angle of Ω =.1 sr Strahlstärke Radiant intensity I F = ma, t p = 2 ms Strahlstärke Radiant intensity I F = 1 A, t p = 25 μs I e min 25 I e max 5 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one bin in one packing unit (variation lower 2:1) SFH 4516-T SFH 4516-U 4 8 mw/sr mw/sr I e typ mw/sr

5 Relative Spectral Emission I rel = f (λ) Ι rel % 8 OHRD1938 Radiant Intensity Single pulse, t p = 25 μs Ι e Ι e ma 2 A 1 Ι e Ι e ma = f (I F ) OHR1551 Max. Permissible Forward Current I F = f (T A ) 12 ma OHR R thja = 45 K/W nm 6 λ Forward Current I F = f (V F ), single pulse, t p = μs 1 A OHR A Radiation Characteristics, Ι rel = f (ϕ) ϕ C 12 T A OHR V 8 V F Permissible Pulse Handling Capability I F = f (τ), T A = 25 C duty cycle D = parameter OHR86 Ι ma F 5 t p D = T D =.5 t p T DC s t p

6 Maßzeichnung Package Outlines 1.8 (.71) 1.2 (.47) spacing 2.54 (.) Cathode.4 (.16).6 (.24) 29 (1.142) 27 (1.63).4 (.16).8 (.31) Area not flat Chip position 9. (.354) 8.2 (.323) 7.8 (.37) 7.5 (.295) ø4.8 (.189) ø5.1 (.21) 4.8 (.189) 4.2 (.165) 5.9 (.232) 5.5 (.217).6 (.24).4 (.16) GEOY6645 Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign Recommended Solder Pad Wellenlöten (TTW) TTW Soldering 4.8 (.189) 4 (.157) OHLPY985 Maße in mm (inch) / Dimensions in mm (inch)

Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C 25 2 235 C... 26 C 1. Welle 1. wave s 2. Welle 2.

7 Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C 1. Welle 1. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY ca 2 K/s 5 K/s 2 K/s C C 5 2 K/s Zwangskühlung forced cooling s 25 t Published by OSRAM Opto Semiconductors GmbH Leibnizstrasse 4, D-9355 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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