FS 225 R17 KE3. Technische Information / Technical Information. vorläufige Daten preliminary data. Höchstzulässige Werte / Maximum rated values

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1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage T vj = 25 C V CES 17 V Kollektor-Dauergleichstrom T C = 8 C I C,nom. 225 A DC-collector current T C = 25 C I C 34 A Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I 2 t - value, Diode Isolations-Prüfspannung insulation test voltage t P = 1 ms, T C = 8 C I CRM 45 A T C =25 C, Transistor P tot 138 W V GES +/- 2V V I F 225 A tp = 1 ms I FRM 45 A V R = V, t p = 1ms, T Vj = 125 C I 2 t t.b.d. k A 2 s RMS, f = 5 Hz, t = 1 min. V ISOL 3,4 kv Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung I C = 225A, V GE = 15V, T vj = 25 C V CE sat - 2, 2,45 V collector-emitter saturation voltage I C = 225A, V GE = 15V, T vj = 25 C - 2,4 t.b.d. V Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current I C = 9mA, V CE = V GE, T vj = 25 C V GE(th) 5,2 5,8 6,4 V V GE = -15V V Q G - 2,55 - µc f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C ies nf f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C res -,7 - nf V CE = 17V, V GE = V, T vj = 25 C ma V CE = 17V, V GE = V, T vj = 125 C ma I CES Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES - - na prepared by: Alfons Wiesenthal date of publication: approved by: Christoph Lübke revision: 2. 1/8 DB_FS225R17KE3_2..xls

2 Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) I C = 225A, V CE = 9V turn on delay time (inductive load) V GE = ±15V, R G = 6,2, T vj = 25 C t d,on -,23 - µs V GE = ±15V, R G = 6,2, T vj = 125 C -,25 - µs Anstiegszeit (induktive Last) I C = 225A, V CE = 9V rise time (inductive load) V GE = ±15V, R G = 6,2, T vj = 25 C t r -,1 - µs V GE = ±15V, R G = 6,2, T vj = 125 C -,1 - µs Abschaltverzögerungszeit (ind. Last) I C = 225A, V CE = 9V turn off delay time (inductive load) V GE = ±15V, R G = 6,2, T vj = 25 C t d,off -,8 - µs V GE = ±15V, R G = 6,2, T vj = 125 C -,95 - µs Fallzeit (induktive Last) I C = 225A, V CE = 9V fall time (inductive load) V GE = ±15V, R G = 6,2, T vj = 25 C t f -,1 - µs V GE = ±15V, R G = 6,2, T vj = 125 C -,2 - µs Einschaltverlustenergie pro Puls I C = 225A, V CE = 9V, V GE = ±15V turn-on energy loss per pulse R G = 6,2, T vj = 125 C, L = 8nH E on mj Abschaltverlustenergie pro Puls I C = 225A, V CE = 9V, V GE = ±15V turn-off energy loss per pulse R G = 6,2, T vj = 125 C, L = 8nH E off mj Kurzschlußverhalten t P 1µsec, V GE 15V SC Data T Vj 125 C, V CC =1V, V CEmax =V CES -L CE di/dt I SC A Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip L CE nh pro Zweig / per arm, T C = 25 C R CC +EE - 1,1 - m Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung I F = 225A, V GE = V, T vj = 25 C V F - 1,8 2,2 V forward voltage I F = 225A, V GE = V, T vj = 125 C - 1,9 t.b.d. V Rückstromspitze I F = 225A, - di F /dt = 275A/µs peak reverse recovery current V R = 9V, V GE = -15V, T vj = 25 C I RM A V R = 9V, V GE = -15V, T vj = 125 C - - A Sperrverzögerungsladung I F = 225A, - di F /dt = 275A/µs recovered charge V R = 9V, V GE = -15V, T vj = 25 C Q r µc V R = 9V, V GE = -15V, T vj = 125 C µc Abschaltenergie pro Puls I F = 225A, - di F /dt = 275A/µs reverse recovery energy V R = 9V, V GE = -15V, T vj = 25 C E rec mj V R = 9V, V GE = -15V, T vj = 125 C mj 2/8 DB_FS225R17KE3_2..xls

3 Charakteristische Werte / Characteristic values NTC - Widerstand / NTC - thermistor min. typ. max. Nennwiderstand rated resistance T C = 25 C R k Abweichung von R 1 T C = 1 C; R 1 = 493 R/R -5-5 % devitation of R 1 Verlustleistung Power dissipation T C = 25 C P mw B - Wert B - value R2= R1 exp[b(1/t2-1/t1)] B 25/ K Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC R thjc - -,9 K/W thermal resistance, junction to case Diode/Diode, DC R thjc - -,16 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K R thck -,5 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj max C Betriebstemperatur operation temperature T vjop C Lagertemperatur storage temperature T stg C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al 2 O 3 Kriechstrecke creepage distance 14 mm Luftstrecke clearance 1 mm CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube / screw M5 M 3-6 Nm Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M6 M 3-6 Nm Gewicht weight G 916 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3/8 DB_FS225R17KE3_2..xls

4 Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V 45 2 Tvj = 25 C Tvj = 125 C ,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 45 Ausgangskennlinienfeld (typisch) I C = f (V CE ) Output characteristic (typical) T vj = 125 C 2 VGE=9V VGE=11V VGE=13V VGE=15V VGE=19V ,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 4/8 DB_FS225R17KE3_2..xls

5 Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = 2V 45 Tvj = 25 C Tvj = 125 C V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) 45 Tvj = 25 C Tvj = 125 C I F [A] ,,5 1, 1,5 2, 2,5 3, V F [V] 5/8 DB_FS225R17KE3_2..xls

6 Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) V GE = ±15V, R Gon = R Goff = 6,2 Ohm, V CE = 9V, T vj = 125 C 62 V 9V T 125 C Eon Eoff Erec E [mj] Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) V GE = ±15V, I C = 225A, V CE = 9V, T vj = 125 C 45 Eon Eoff Erec E [mj] R G [ ] 6/8 DB_FS225R17KE3_2..xls

7 Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t) 1 Z thjc [K/W],1,1 Zth:Diode Zth:IGBT,1,1,1,1 1 1 t [s] i r i [K/kW] : IGBT 22,91 33,85 26,14 7,19 i [s] : IGBT,1565,3977,7521 1,443 r i [K/kW] : Diode 54,22 6,17 38,1 7,51 i [s] : Diode,213,311,8672 1,1583 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) V GE = ±15V, R G = 6,2 Ohm, T vj = 125 C 5 45 IC,Chip V CE [V] 7/8 DB_FS225R17KE3_2..xls

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