Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA

Transkript

1 Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm () und bei 880 nm () Kurze Schaltzeit (typ. 10 ns) 3 mm-plastikbauform im LED-Gehäuse Auch gegurtet lieferbar Anwendungen Lichtschranken für Gleich- und Wechselbetrieb Industrieelektronik Messen/Steuern/Regeln Features Especially suitable for applications from 380 nm to 1100 nm () and of 880 nm () Short switching time (typ. 10 ns) 3 mm LED plastic package Also available on tape and reel Applications Photointerrupters Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code Q62702-P215 Q62702-P

2 , Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Wert Value T op ; T stg C T S 230 C V R 20 V Einheit Unit P tot 150 mw Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Fotostrom Photocurrent V R = 5 V, Normlicht/standard light A, T = 2856 K, E V = 1000 lx V R = 5 V, λ = 950 nm, E e = 1 mw/cm 2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von S max Spectral range of sensitivity S = 10% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle I P I P 28 ( 18) Wert Value 20 ( 10.8) Einheit Unit λ S max nm λ nm A mm 2 L B mm mm L W H mm ϕ ± 17 ± 17 Grad deg

3 , Kennwerte (T A = 25 C) Characteristics (cont d) Bezeichnung Parameter Dunkelstrom, V R = 10 V Dark current Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Quantenausbeute, λ = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage E v = 1000 Ix, Normlicht/standard light A, T = 2856 K E e = 0.5 mw/cm 2, λ = 950 nm Kurzschlußstrom Short-circuit current E v = 1000 Ix, Normlicht/standard light A, T = 2856 K E e = 0.5 mw/cm 2, λ = 950 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 50 Ω; V R = 10 V; λ = 850 nm; I p = 800 I R 50 ( 5000) 50 ( 5000) pa S λ A/W η Electrons Photon V O V O I SC I SC 450 ( 400) ( 370) 9 mv mv t r, t f ns Durchlaßspannung, I F = 100 ma, E = 0 V F V Forward voltage Kapazität, V R = 0 V, f = 1 MHz, E = 0 C pf Capacitance Temperaturkoeffizient von V O Temperature coefficient of V O TC V mv/k Temperaturkoeffizient von I SC Temperature coefficient of I SC Normlicht/standard light A λ = 950 nm Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V, λ = 850 nm Nachweisgrenze, V R = 10 V, λ = 850 nm Detection limit TC I 0.18 Wert Value 0.2 NEP D* Einheit Unit %/K W Hz cm Hz W

4 , Relative Spectral Sensitivity S rel = f (λ) Relative Spectral Sensitivity S rel = f (λ) Photocurrent I P = f (E v ), V R = 5 V Open-Circuit Voltage V O = f (E v ) Photocurrent I P = f (E e ), V R = 5 V Open-Circuit Voltage V O = f (E e ) Total Power Dissipation P tot = f (T A ) Dark Current I R = f (V R ), E =

5 , Capacitance C = f (V R ), f = 1 MHZ, E = 0 Dark Current I R = f (T A ), V R = 10 V, E = 0 Directional Characteristics S rel = f (ϕ)

6 , Maßzeichnung Package Outlines 2.54 (0.100) spacing Collector (Transistor) Cathode (Diode) 0.7 (0.028) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) 3.5 (0.138) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) Area not flat 5.2 (0.205) 4.5 (0.177) 4.1 (0.161) 3.9 (0.154) ø3.1 (0.122) ø2.9 (0.114) Chip position 6.3 (0.248) 5.9 (0.232) 0.6 (0.024) 0.4 (0.016) 4.0 (0.157) 3.6 (0.142) GEOY6653 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered