UV-Lumineszensdiode UV Light Emitting Diode SFH Vorläufige Daten / Preliminary Data

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UV-Lumineszensdiode UV Light Emitting Diode SFH 484 Vorläufige Daten / Preliminary Data Wesentliche Merkmale UV-LED mit Emissionswellenlänge 395nm Enger Abstrahlwinkel Hermetisch dichtes Gehäuse

1 UV-Lumineszensdiode UV Light Emitting Diode SFH 484 Vorläufige Daten / Preliminary Data Wesentliche Merkmale UV-LED mit Emissionswellenlänge 395nm Enger Abstrahlwinkel Hermetisch dichtes Gehäuse ESD-Festigkeit Klasse 1 nach MIL-STD-883E Anwendungen Kleber- und Lackaushärtung Erkennen von Sicherheitsmerkmalen auf Geldscheinen Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Ultraviolett- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Norm behandelt werden. Features UV-LED with Peakwavelength 395nm Narrow emission angle Hermetically sealed package ESD-Classification Class 1 according to MIL-STD-883E Applications Curing of glue and laquer Recognition of safety features of money bills Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible ultraviolet light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC Safety of laser products. Typ Type Bestellnummer Ordering Code Strahlstärkegruppierung 1) (I F = 3mA, t p = 2 ms) Radiant intensity grouping 1) I e (mw/sr) SFH 484 on request typ. 45 1) gemessen bei einem Raumwinkel Ω =.1 sr measured at a solid angle of Ω =.1 sr

2 Grenzwerte Maximum Ratings Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrspannung Reverse voltage Vorwärtsgleichstrom, T C 25 C Forward current Stoßstrom, t p = 1 µs, D =, T C = 25 C Surge current Verlustleistung T C = 25 C Power dissipation Wärmewiderstand Thermal resistance Kennwerte (T A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission I F = 3 ma Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = 3 ma3 ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Gesamte Chipfläche Entire chip area Abmessungen der gesamten Chipfläche Dimension of the entire chip area Wert Value T op C T stg C V R 5 V I F 3 ma I FSM 2 ma P tot 12 mw R thja 45 R thjc 16 Wert Value K/W K/W λ peak 395 nm λ 12 nm ϕ ± 3 Grad deg. A.58 mm 2 L B mm L W A.9 mm 2 L B L W.3.3 mm

3 Kennwerte (T A = 25 C) Characteristics (cont d) Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei I F = 3 ma, R L = 5 Ω Switching times, Ι e from 1% to 9% and from 9% to 1%, I F = 3 ma, R L = 5 Ω t r, t f 3 ns Durchlaßspannung Forward voltage I F = 3 ma, t p = 2 ms V F 3.7 (< 4.3) V Sperrstrom Reverse current V R = 5 V I R 1 µa ESD-Festigkeit (Human Body Model) ESD Threshold (Human Body Model) Gesamtstrahlungsfluß Total radiant flux I F = 3 ma, t p = 2 ms Wert Value V ESD 1 V Φ e 2.5 mw

4 Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Werte Values Strahlstärke Radiant intensity I F = 3 ma, t p = 2 ms I e typ 45 mw/sr Radiation Characteristics 1) I rel = f (ϕ), erel 1 % deg. 2 φ

5 Relative Spectral Emission I rel = f (λ), rel I Radiant Intensity e I e 1 ma = f (I F ) Single pulse, t p = 2 µs, e,r Max. Permissible Forward Current I F = f (T A ), R thja = 45 K/W, F 35 ma nm 45 λ ma1, F C 8 7 A Forward Current I F = f (V F ) Single pulse, t p = 2 µs, F 1.E+2 1.E+1 Permissible Pulse Handling Capability I F = f (t p ), T C = 25 C, duty cycle D = parameter I F.3 A.25 tp t D = P T T OHL145 I F 1.E+ 1.E-1 1.E D = E V 5 9 F s 1 2 t p

6 Maßzeichnung Package Outlines ø4.8 (.189) ø4.6 (.181) Cathode (SFH 48) Chip position Anode (SFH 216, SFH 4) 2.7 (.16) ø.45 (.18) 5.3 (.29) 5. (.197) 14.5 (.571) 12.5 (.492) 7.4 (.291) 6.6 (.26) 2.54 (.1) spacing 1.1 (.43).9 (.35) 1.1 (.43).9 (.35) Radiant Sensitive area ø5.6 (.22) ø5.3 (.29) GEOY6314 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Anode marking: flag at package Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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UV-Lumineszensdiode UV Light Emitting Diode Lead (Pb) Free Product - RoHS Compliant SFH 484 Vorläufige Daten / Preliminary Data Wesentliche Merkmale UV-LED mit Emissionswellenlänge 395nm Enger Abstrahlwinkel