Technische Information / technical information FS50R06YL4

Größe: px

Ab Seite anzeigen:

Download "Technische Information / technical information FS50R06YL4"

Marielies Emilia Ziegler
vor 6 Jahren
Abrufe

1 IGBTModule IGBTModules Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage T vj = 25 C Kollektor Dauergleichstrom T c = 55 C DC collector current T c = 25 C V CES 6 I C,nom. 5 A I C 55 A V Periodischer Kollektor Spitzenstrom repetitive peak collector current t p = 1ms, T c = 55 C I CRM 1 A Gesamt Verlustleistung total power dissipation T c = 25 C, Transistor P tot 22 W Gate Emitter Spitzenspannung gate emitter peak voltage V GES +2 V Dauergleichstrom DC forward current I F 5 A Periodischer Spitzenstrom repetitive peak forward current t p = 1ms I FRM 1 A Grenzlastintegral I²t value V R = V, t p = 1ms, T vj = 125 C I²t 63 A²s Isolations Prüfspannung insulation test voltage RMS, f= 5Hz, t= 1min V ISOL 2,5 kv Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung V GE = 15V, T vj = 25 C, I C = I C,nom collector emitter saturation voltage V GE = 15V, T vj = 125 C, I C = I C,nom V CEsat min. typ. max. 1,95 2,55 V 2,2 V Gate Schwellenspannung gate threshold voltage V CE = V GE, T vj = 25 C, I C = 1mA V GE(th) 4,5 5,5 6,5 V Gateladung gate charge V GE = 15V...+15V Q G,3 µc Eingangskapazität input capacitance f= 1MHz, T vj = 25 C, V CE = 25V, V GE = V C ies 2,2 nf Rückwirkungskapazität reverse transfer capacitance f= 1MHz, T vj = 25 C, V CE = 25V, V GE = V C res,2 nf Kollektor Emitter Reststrom collector emitter cut off current V CE = 6V, V GE = V, T vj = 25 C I CES 5 ma Gate Emitter Reststrom gate emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES 4 na prepared by: P. Kanschat date of publication: approved: R. Keggenhoff revision: (9)

2 IGBTModule IGBTModules Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (induktive Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data I C = 5A, V CC = 3V V GE = ±15V, R G = 3,3Ω, T vj = 25 C V GE = ±15V, R G = 3,3Ω, T vj = 125 C I C = 5A, V CC = 3V V GE = ±15V, R G = 3,3Ω, T vj = 25 C V GE = ±15V, R G = 3,3Ω, T vj = 125 C I C = 5A, V CC = 3V V GE = ±15V, R G = 3,3Ω, T vj = 25 C V GE = ±15V, R G = 3,3Ω, T vj = 125 C I C = 5A, V CC = 3V V GE = ±15V, R G = 3,3Ω, T vj = 25 C V GE = ±15V, R G = 3,3Ω, T vj = 125 C I C = 5A, V CC = 3V, V GE = 15V R G = 3,3Ω, T vj = 125 C, L σ = 15nH I C = 5A, V CC = 3V, V GE = 15V R G = 3,3Ω, T vj = 125 C, L σ = 15nH t P 1µsec, V GE 15V, T vj = 125 C, V CC =36V, V CEmax =V CES L σce di/dt t d,on t r t d,off t f E on E off 1,35 mj I SC min. typ. max. 42 ns 43 ns 11 ns 12 ns 12 ns 13 ns 2 ns 3 ns,5 mj 225 A Modulinduktivität stray inductance module L σce 35 nh Leitungswiderstand, AnschlussChip lead resistance, terminalchip T c = 25 C R CC /EE 4 mω Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung I F = 5A, V GE = V, T vj = 25 C forward voltage I F = 5A, V GE = V, T vj = 125 C I F = 5A, di F /dt= 26 A/µs Rückstromspitze V R = 3V, V GE = 1V, T vj = 25 C peak reverse recovery current V R = 3V, V GE = 1V, T vj = 125 C I F = 5A, di F /dt= 26 A/µs Sperrverzögerungsladung V R = 3V, V GE = 1V, T vj = 25 C recovered charge V R = 3V, V GE = 1V, T vj = 125 C I F = 5A, di F /dt= 26 A/µs Ausschaltenergie pro Puls V R = 3V, V GE = 1V, T vj = 25 C reverse recovery energy V R = 3V, V GE = 1V, T vj = 125 C V F I RM Q r E rec 1,25 1,7 V 1,2 V 88 A 94 A 3,2 µc 5,4 µc 1,5 mj 1,5 mj 2 (9)

3 IGBTModule IGBTModules Charakteristische Werte / characteristic values NTCWiderstand / NTCthermistor min. typ. max. Nennwiderstand rated resistance T c = 25 C R 25 5 kω Abweichung von R 1 T c = 1 C, R 1 = 493Ω R/R deviation of R % Verlustleistung power dissipation T c = 25 C P 25 2 mw BWert Bvalue R 2 = R 1 exp[b(1/t 2 1/T 1 )] B 25/ K Thermische Eigenschaften / thermal properties Innerer Wärmewiderstand; DC thermal resistance, juncton to case; DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter R thjc,62 K/W 1,2 K/W Wärmewiderstand; DC thermal resistance, junction to heatsink, DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter R thjh,95 K/W 1,5 K/W λ Paste = 1 W / m*k / λ grease = 1 W / m*k ÜbergangsWärmewiderstand, DC thermal resistance, case to heatsink; DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter R thch,35 K/W,45 K/W λ Paste = 1 W / m*k / λ grease = 1 W / m*k Höchstzulässige Sperrschichttemp. maximum junction temperature T vjmax 15 C Betriebstemperatur operation temperature T op C Lagertemperatur storage temperature T stg C Mechanische Eigenschaften / mechanical properties Innere Isolation internal insulation Al 2 O 3 CTI comperative tracking index 225 Anpresskraft pro Feder mounting force per clamp F 4..8 N Gewicht weight G 36 g Kriechstrecke creepage distance Luftstrecke clearance distance Anschluss Kühlkörper terminal to heatsink Anschluss Anschluss terminal to terminal Anschluss Kühlkörper terminal to heatsink Anschluss Anschluss terminal to terminal 13,5 mm 5, mm 12, mm 5, mm 3 (9)

4 IGBTModule IGBTModules Ausgangskennlinie (typisch) output characteristic (typical) I C = f(v CE ) V GE = 15V Tvj = 25 C Tvj = 125 C 7 6 I C [A] ,,5 1, 1,5 2, 2,5 3, 3,5 V CE [V] Ausgangskennlinienfeld (typisch) I C = f(v CE ) output characteristic (typical) T vj = 125 C VGE = 2V VGE = 15V VGE = 12V VGE = 1V VGE = 9V VGE = 8V I C [A] ,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 4 (9)

5 IGBTModule IGBTModules Übertragungscharakteristik (typisch) transfer characteristic (typical) I C = f(v GE ) V CE = 2V Tvj = 25 C Tvj = 125 C 7 6 I C [A] V GE [V] Durchlasskennlinie der Inversdiode (typisch) I F = f(v F ) forward characteristic of inverse diode (typical) Tvj = 25 C Tvj = 125 C 7 6 I F [A] ,,2,4,6,8 1, 1,2 1,4 1,6 V F [V] 5 (9)

6 IGBTModule IGBTModules Schaltverluste (typisch) switching losses (typical) E on = f(i C ), E off = f(i C ), E rec = f(i C ) V GE = ±15V, R G = 3,3Ω, V CE = 3V, T vj = 125 C 3 2,5 Eon Eoff Erec 2 E [mj] 1,5 1, I C [A] Schaltverluste (typisch) switching losses (typical) E on = f (R G ), E off = f (R G ), E rec = f (R G ) V GE = ±15V, I C = 5A, V CE = 3V, T vj = 125 C 3 Eon Eoff Erec 2 E [mj] R G [Ω] 6 (9)

7 IGBTModule IGBTModules Transienter Wärmewiderstand transient thermal impedance Z thjh = f (t) 1,E+1 Z thjh (K/W) 1,E+ 1,E1 Zth:IGBT 1,E2 Zth:Diode,1,1,1 1 1 t (s) i r i [K/kW]: IGBT τ i [s]: IGBT r i [K/kW]: Diode τ i [s]: Diode 1 57, 2 19, 3 532, 4 171,,75,288,148, , 21, 885, 33,,56,124,128,2543 Sicherer Arbeitsbereich (RBSOA) reverse bias safe operation area (RBSOA) V GE = ±15V, T j =125 C IC,Chip IC, Modul I C [A] V CE [V] 7 (9)

8 IGBTModule IGBTModules Schaltbild circuit diagram ϑ Gehäusemaße package outline Bohrplan drilling layout 8 (9)

9 IGBTModule IGBTModules Gehäusemaße Fortsetzung package outline contd. Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 9 (9)

10 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via / sales & contact. Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via / sales & contact.

Ähnliche Dokumente

BSM10GP120. Technische Information / Technical Information. Elektrische Eigenschaften / Electrical properties. IGBT-Module IGBT-Modules

BSM10GP120. Technische Information / Technical Information. Elektrische Eigenschaften / Electrical properties. IGBT-Module IGBT-Modules Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage