Engwinklige LED im Dragon Dome Gehäuse (850 nm) Narrow beam LED in Dragon Dome package (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4783

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1 Engwinklige LED im Dragon Dome Gehäuse (85 nm) Narrow beam LED in Dragon Dome package (85 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4783 DRAFT - This design is for Reference only. Subject to change without notice. Wesentliche Merkmale IR-Lichtquelle mit hohem Wirkungsgrad Enger Abstrahlwinkel (12 ) Niedriger Wärmewiderstand (Max. 11 K/W) Schwerpunktwellenlänge 85 nm ESD sicher bis 2 kv nach ANSI/ESDA/JEDEC JS-1; Klasse 2 Anwendungen Infrarotbeleuchtung für Kameras Überwachungssysteme Beleuchtung für Bilderkennungssysteme Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen und behandelt werden. Features IR lightsource with high efficiency Narrow half angle (12 ) Low thermal resistance (Max. 11 K/W) Centroid wavelength 85 nm ESD safe up to 2 kv acc. to ANSI/ESDA/ JEDEC JS-1) Applications Infrared Illumination for cameras Surveillance systems Machine vision systems Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC and IEC Typ Type Bestellnummer Ordering Code SFH 4783 Q65111A4329 (typ. 24) Strahlstärkegruppierung 1) () Radiant Intensity Binning 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel =.1 sr / measured at a solid angle of =.1 sr

2 Grenzwerte (T A = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Symbol Symbol Wert Value T op, T stg 4 + C T J C V R 1 V Vorwärtsgleichstrom 1) I F 1 A Forward current 1) Stoßstrom, t p < 1.5 ms, D = Surge current I FSM 2 A Leistungsaufnahme 1) P tot 2.1 W Power consumption 1) Wärmewiderstand Sperrschicht - Lötstelle Thermal resistance junction - soldering point 1) siehe auch maximal zulässiges Durchlassstrom Diagramm / see maximum permissible forward current diagram Einheit Unit R thjs 11 K/W Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission Schwerpunktwellenlänge der Strahlung Centroid wavelength Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max Abstrahlwinkel Half angle Abmessungen der aktiven Chipfläche Dimension of the active chip area Symbol Symbol Wert Value peak 86 nm centroid 85 nm 3 nm Einheit Unit 12 Grad deg. L B L W 1 1 mm²

3 Kennwerte (T A = 25 C) Characteristics (cont d) Bezeichnung Parameter Schaltzeiten, I e von % auf 9% und von 9% auf %, I F = 2 A, R L = 5 Switching times, e from % to 9% and from 9% to %, I F = 2 A, R L = 5 Durchlassspannung Forward voltage I F = 1 A, t p = µs I F = 2 A, t p = µs Gesamtstrahlungsfluss Total radiant flux I F = 1 A, t p = µs Temperaturkoeffizient von I e bzw. e Temperature coefficient of I e or e Temperaturkoeffizient von V F Temperature coefficient of V F Temperaturkoeffizient von Temperature coefficient of Symbol Symbol t r / t f 11 / 14 ns V F V F Wert Value 1.65 (< 2.1) 1.9 (< 2.5) Einheit Unit V V e 43 mw TC I.3 %/K TC V 1 mv/k TC centroid +.3 nm/k

4 Strahlstärke I e in Achsrichtung 1) gemessen bei einem Raumwinkel =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of =.1 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit -FW -GW Strahlstärke Radiant intensity e min e max mw/sr mw/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one bin in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics I rel = f () Erel / % Angle /

5 Relative spektrale Emission Relative Spectral Emission I rel = f (), T A = 25 C, I F = 1 A Single pulse, t p = ms I rel % 8 OHF4132 Durchlassstrom Forward Current I F = f (V F ), T A = 25 C Single pulse, t p = s 1 A IF OHF567 Relativer Gesamtstrahlungsfluss Relative Total Radiant Flux e / e (ma) = f (I F ), T A = 25 C Single pulse, t p = s Φ 1 Φ e e (1 A) OHF nm λ V 2 V F A I F 1 Max. zulässiger Durchlassstrom Max. Permissible Forward Current I F = f (T S ), R thjs = 11K/W 1 ma I F OHF C 12 T S Zulässige Impulsbelastbarkeit Permissible Pulse Handling Capability I F = f (t p ), T S = 85 C, Duty cycle D = parameter I F 2.1 A D t P = T -1 t P D = T OHF t p s I F

6 Maßzeichnung 1) Package Outlines 1) Maße in mm (inch) / Dimensions in mm (inch)

7 Empfohlenes Lötpaddesign 1) Recommended Solder Pad Design 12. (.472) 11.6 (.457).3 (.12) 11.6 (.457) 2.3 (.91) (.394) 1.6 (.63) 2.3 (.91) ø2.5 (.98) ø4. (.157) 1.6 (.63) Kupfer Copper ø4. (.157) Heatsink attach 3 Lötstellen 3 solder points Thermisch optimiertes PCB Thermal enhanced PCB Lötstopplack Solder resist Lötpasten Schablone Solder paste stencil Bare Copper Freies Kupfer Footprint OHAY681 Achtung: Anode und Heatsink sind elektrisch verbunden Attention: Anode and Heatsink are electrically connected Note: Um eine verbesserte Lötstellenkontaktierung zu erreichen, empfehlen wir, unter Standardstickstoffatmosphäre zu löten. / For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. 1) Maße in mm (inch) / Dimensions in mm (inch)

8 Lötbedingungen Vorbehandlung nach JEDEC Level 3 Soldering Conditions Preconditioning acc. to JEDEC Level 3 Reflow Lötprofil für bleifreies Löten (nach J-STD-2D.1) Reflow Soldering Profile for lead free soldering (acc. to J-STD-2D.1) 3 C T C 217 C t P t L T p OHA C 15 t S 5 25 C s 3 t Profileigenschaften Profile Feature Aufheizrate zum Vorwärmen* ) / Ramp-up rate to preheat* ) 25 C to 15 C Zeit t s von T Smin bis T Smax / Time t s from T Smin to T Smax 15 C to 2 C Aufheizrate zur Spitzentemperatur* ) / Ramp-up rate to peak* ) 18 C to T P Bleifreier Aufbau / Pb-Free Assembly (SnAgCu) Empfehlung / Recommendation 2 K / s 3 K / s Grenzwerte / Max. Ratings s min. 6 s max. 12 s 2 K / s 3 K / s Liquidustemperatur T L / 217 C Liquidus temperature T L Zeit t L über T L / Time t L above T L 8 s max. s Spitzentemperatur T P / Peak temperature T P 245 C max. 26 C Verweilzeit t P innerhalb des spezifizierten Spitzentemperaturbereichs T P - 5 K / Time t P within the specified peak temperature range T P - 5 K Abkühlrate* ) / Ramp-down rate* ) T P to C Zeitspanne von 25 C bis zur Spitzentemperatur / Time from 25 C to peak temperature 2 s min. s max. 3 s 3 K / s 6 K / s maximum max. 8 min. Alle Temperaturen beziehen sich auf die Bauteilmitte, jeweils auf der Bauteiloberseite gemessen / All temperatures refer to the center of the package, measured on the top of the package * Steigungsberechnung T/t: t max. 5 s; erfüllt über den gesamten Temperaturbereich / slope calculation T/t: t max. 5 s; fulfillment for the whole T-range

9 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-9355 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. Disclaimer OSRAM OS assumes no liability whatsoever for any use of this document or its content by recipient including, but not limited to, for any design-in activities based on this preliminary draft version. OSRAM OS may e.g. decide at its sole discretion to stop developing and/or finalising the underlying design at any time