Schnelle IR-Lumineszenzdiode (950 nm) im 3 mm Radial-Gehäuse High-Speed Infrared Emitter (950 nm) in 3 mm Radial Package

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Margarethe Käte Melsbach
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Schnelle IR-Lumineszenzdiode (95 nm) im 3 mm Radial-Gehäuse High-Speed Infrared Emitter (95 nm) in 3 mm Radial Package SFH 431 Wesentliche Merkmale Hohe Pulsleistung und hoher Gesamtstrahlungsfluß Φ

1 Schnelle IR-Lumineszenzdiode (95 nm) im 3 mm Radial-Gehäuse High-Speed Infrared Emitter (95 nm) in 3 mm Radial Package SFH 431 Wesentliche Merkmale Hohe Pulsleistung und hoher Gesamtstrahlungsfluß Φ e Sehr kurze Schaltzeiten (1 ns) Sehr hohe Langzeitstabilität Hohe Zuverlässigkeit Anwendungen Schnelle Datenübertragung mit Übertragungsraten bis 1 Mbaud (IR Tastatur, Joystick, Multimedia) Analoge und digitale Hi-Fi Audio- und Videosignalübertragung Batteriebetriebene Geräte (geringe Stromaufnahme) Anwendungen mit hohen Zuverlässigkeits-ansprüchen bzw. erhöhten Anforderungen Alarm- und Sicherungssysteme IR Freiraumübertragung Features High pulse power and high radiant flux Φ e Very short switching times (1 ns) Very high long-time stability High reliability Applications High data transmission rate up to 1 Mbaud (IR keyboard, Joystick, Multimedia) Analog and digital Hi-Fi audio and video signal transmission Low power consumption (battery) equipment Suitable for professional and high-reliability applications Alarm and safety equipment IR free air transmission Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 431 Q6272-P mm-LED-Gehäuse (T1), schwarz eingefärbt, Anschlüsse im 2.54-mm-Raster ( 1 / 1 ), Kathodenkennung: längerer Anschluß 3 mm LED package (T1), black-colored epoxy resin, solder tabs lead spacing 2.54 mm ( 1 / 1 ), cathode marking: long lead

2 Grenzwerte (T A = 25 C) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom Surge current t p = 1 µs, D = Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung, freie Beinchenlänge max. 1 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 1 mm T op ; T stg C V R 3 V I F (DC) 1 ma I FSM 2.2 A P tot 18 mw R thja 375 K/W

3 Kennwerte (T A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength of peak emission Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, I e von 1% auf 9% und von 9% auf 1% Switching times, I e from 1% to 9% and from 9% to 1%, I F = 1 ma, t P = 2 ms, R L = 5 Ω Kapazität Capacitance V R = V, f = 1 MHz Durchlaβspannung Forward voltage I F = 1 A, t p = 1 µs Sperrstrom Reverse current V R = 3 V Gesamtstrahlungsfluß Total radiant flux Temperaturkoeffizient von I e bzw. Φ e Temperature coefficient of I e or Φ e I F = 1 ma λ peak 95 nm λ 4 nm ϕ ± 1 Grad deg. A.9 mm 2 L B L W.3.3 mm t r, t f 1 ns C o 35 pf V F V F 1.5 ( 1.8) 3.2 ( 4.) V V I R.1 ( 1) µa Φ e 32 mw TC I.44 %/K

4 Kennwerte (T A = 25 C) (cont d) Characteristics Temperaturkoeffizient von V F Temperature coefficient of V F I F = 1 ma Temperaturkoeffizient von λ Temperature coefficient of λ I F = 1 ma TC V 1.5 mv/k TC λ +.2 nm/k Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel von Ω =.1 sr Radiant Intensity I e in Axial Direction measured at a solid angle of Ω =.1 sr Strahlstärke Radiant intensity Strahlstärke Radiant intensity I F = 1 A, t p = 1 µs I e min 16 I e typ 6 mw/sr mw/sr I e typ 4 mw/sr Lötbedingungen Soldering Conditions Lötpadtemperatur Tauch-, Schwall- und Schlepplötung Dip, Wave and Drag Soldering Maximal zulässige Lötzeit Abstand Lötstelle Gehäuse Kolbenlötung (mit 1,5-mm-Kolbenspitze) Iron Soldering (with 1.5-mm-bit) Temperatur des Kolbens Maximale zulässige Lötzeit Abstand Lötstelle Gehäuse Temperature of the Soldering Bath Max. Perm. Soldering Time Distance between Solder Joint and Case Temperature of the Soldering Iron Max. Permissible Soldering Time Distance between Solder Joint and Case 26 C 1 s 1.5 mm 3 C 3 s 1.5 mm

5 Relative Spectral Emission I erel = f (λ) Ι erel 1 8 OHF777 Radiant Intensity I e /I e (1 ma) = f (I F ) Single pulse, t p = 2 µs 1 2 Ι e Ι e (1 ma) OHF89 Max. Permissible Forward Current I F = f (T A ) Ι F 12 ma 1 OHF R thja = 375 K/W nm 11 λ ma 1 4 Ι F C 12 T A Forward Current I F = f (V F ) single pulse, t p = 2 µs Radiation Characteristic I erel = f (ϕ) 1 4 ma Ι F 1 3 OHF OHF116 ϕ V 4.5 V F Permissible Pulse Handling Capability I F = f (τ), T A = 25 C, duty cycle D = parameter 1 1 A I F 5 t D = T P t P T OHF41 I F D = s 1 2 t p

6 Maßzeichnung Package Outlines.6 (.24).4 (.16) 2.54 (.1) spacing 1.8 (.71) 1.2 (.47).7 (.28) 5.2 (.25) 4.5 (.177) Area not flat.4 (.16).8 (.31).4 (.16) 4.1 (.161) 3.9 (.154) ø3.1 (.122) ø2.9 (.114) (3.5 (.138)) 29 (1.142) 6.3 (.248) 27 (1.63) 5.9 (.232) Chip position Cathode (SFH 49, SFH 4332) Anode (SFH 487, SFH 431) 4. (.157) 3.6 (.142).4 (.16) GEXY625 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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