Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4203

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Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 423 Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Leistungsstarke

1 Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 423 Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Leistungsstarke GaAs-LED (35 mw) Hoher Wirkunsgrad bei kleinen Strömen Homogene Abstrahlung ypische Peakwellenlänge 95 nm Anwendungen Industrieelektronik Messen/Steuern/Regeln Automobiltechnik Sensorik Alarm- und Sicherungssysteme IR-Freiraumübertragung Features High Power GaAs-LED (35 mw) High Efficiency at low currents Homogeneous Radiation Pattern ypical peak wavelength 95 nm Applications Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission yp ype Bestellnummer Ordering Code SFH 423 Q6511A (> 4) Strahlstärkegruppierung 1) ( = 1 ma, t p = 2 ms) Radiant Intensity Grouping 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel Ω =.1 sr / measured at a solid angle of Ω =.1 sr

2 SFH 423 Grenzwerte ( A = 25 C) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, t p = 1 µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm 2 hermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block hermal resistance junction - soldering point, mounted on metal block Wert Value op ; stg C V R 3 V (DC) 1 ma SM 1 A P tot 18 mw R thja R thjs 45 2 K/W K/W Kennwerte ( A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission = 1 ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max = 1 ma, t p = 2 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Wert Value λ peak 95 nm λ 4 nm ϕ ± 65 Grad deg. A.9 mm 2 L B L W.3.3 mm

3 SFH 423 Kennwerte ( A = 25 C) Characteristics (cont d) Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei = 1 ma, t p = 2 ms, R L = 5 Ω Switching times, Ι e from 1% to 9% and from 9% to1%, = 1 ma, t p = 2 ms, R L = 5 Ω Durchlassspannung Forward voltage = 1 ma, t p = 2 ms = 1 A, t p = 1 µs Sperrstrom Reverse current V R = 3 V Gesamtstrahlungsfluss otal radiant flux = 1 ma, t p = 2 ms emperaturkoeffizient von I e bzw. Φ e, = 1 ma emperature coefficient of I e or Φ e, = 1 ma emperaturkoeffizient von V F, = 1 ma emperature coefficient of V F, = 1 ma emperaturkoeffizient von λ, = 1 ma emperature coefficient of λ, = 1 ma Wert Value t r, t f 1 ns V F 1.5 ( 1.8) V F 3.2 ( 4.3) V V I R.1 ( 1) µa Φ e 35 mw C I.44 %/K C V 1.5 mv/k C λ +.2 nm/k Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Strahlstärke Radiant intensity = 1 ma, t p = 2 ms Strahlstärke Radiant intensity = 1 A, t p = 1 µs I e min. 4 I e typ. 8 Werte Values mw/sr mw/sr I e typ. 48 mw/sr

4 SFH 423 Relative Spectral Emission I rel = f (λ) Radiant Intensity, I e 1 ma = f ( ) single pulse, t p = 2 µs I e Forward Current = f (V F ), single pulse, t p = 2 µs 1 Ι erel 8 OHF Ι e Ι e (1 ma) OHF ma Ι F 1 3 OHF nm 11 λ Max. Permissible Forward Current = f ( A ), R thja 1) Ι F 12 ma 1 OHF ma 1 4 Ι F Permissible Pulse Handling Capability = f (t p ), A = 25 C, Duty cycle D = parameter 1.2 A 1. D = t P t P OHL V 4.5 V F Permissible Pulse Handling Capability = f (t p ), A = 85 C, Duty cycle D = parameter 1.2 A 1. t D P = t P OHL R thja = 375 K/W D = D = C 12 A s 1 t p s 1 t p Radiation Characteristics I rel = f (ϕ) OHL869 ϕ 1. 1) ) hermal resistance junction - ambient mounted on PC-board (FR4), pad size 16 mm 2 (each)

5 SFH 423 Maßzeichnung Package Outlines 1.2 (.47) 1. (.39).8 (.31) 1.4 (.55) 1.2 (.47).15 (.6).5 (.2) 2.3 (.91) 2.1 (.83) 2.1 (.83) 1.9 (.75) 1.5 (.59).5 (.2).3 (.12) Light emitting area typ. 1.5 (.59) x 1. (.39) Anode marking +.5 (.2).8 (.31) 1. (.39) 1.5 (.59) 1.3 (.51) Anode marking GPLY67 Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign Recommended Solder Pad Reflow Löten Reflow Soldering 2.8 (.11).8 (.31) 1 (.39) 2.8 (.11).8 (.31) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation 1 (.39) Cu-Fläche > 16 mm 2 Cu-area > 16 mm 2 Lötstopplack Solder resist OHLPY978 Maße in mm (inch) / Dimensions in mm (inch)

6 SFH 423 Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-SD-2C) Reflow Soldering Profile for lead free soldering (acc. to J-SD-2C) 3 C C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max 1 s min OHLA687 + C 26 C -5 C 245 C ±5 C +5 C 235 C - C s max Ramp Down 6 K/s (max) 1 s max 5 Ramp Up 3 K/s (max) 25 C s 3 t Wellenlöten (W) (nach CECC 82) W Soldering (acc. to CECC 82) 3 C C C 1. Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY C C ca 2 K/s 5 K/s 2 K/s 5 2 K/s Zwangskühlung forced cooling s 25 t

SFH 423 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg www.osram-os.com All Rights Reserved.

7 SFH 423 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. he information describes the type of component and shall not be considered as assured characteristics. erms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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