IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4232

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1 IR-Lumineszenzdiode (85 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (85 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4232 Wesentliche Merkmale IR-Lichtquelle mit hohem Wirkungsgrad Niedriger Wärmewiderstand (Max. 9 K/W) Schwerpunktwellenlänge 85 nm ESD-sicher bis 2 kv nach JESD22-A114-E Erweiterte Korrosionsfestigkeit (s.a. Abschnitt Maßzeichnung) Die Produktqualifikation wurde basierend auf der Richtlinie AEC-Q11-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors, durchgeführt. Anwendungen Infrarotbeleuchtung für Kameras Überwachungssysteme Beleuchtung für Bilderkennungssysteme Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen und behandelt werden. Features IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 85 nm ESD safe up to 2 kv acc. to JESD22-A114-E Superior Corrosion Robustness (see chapter package outlines) The product qualification test plan is based on the guidelines of AEC-Q11-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras Surveillance systems Machine vision systems Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC and IEC Typ Type Bestellnummer Ordering Code SFH 4232 Q6511A (typ. 53) 1) gemessen mit Ulbrichtkugel / measured with integrating sphere Gesamtstrahlungsfluss 1) ( = 1A, t p = 1 ms) Total Radiant Flux 1) Φ e (mw)

2 Grenzwerte (T A = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Stoßstrom, t p < 2 µs, D = Surge current Leistungsaufnahme Power consumption Wärmewiderstand Sperrschicht - Lötstelle Thermal resistance junction - soldering point Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 1 A, t p = 1 ms Schwerpunktwellenlänge der Strahlung Centroid wavelength = 1 A, t p = 1 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max = 1 A, t p = 1 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Wert Value T op, T stg C T J C V R 1 V 1 A SM 5 A P tot 1.8 W Einheit Unit R thjs 9 K/W Wert Value λ peak 86 nm λ centroid 85 nm Δλ 3 nm Einheit Unit ϕ ± 6 Grad deg. A 1 mm 2 L B L W 1 1 mm²

3 Kennwerte (T A = 25 C) Characteristics (cont d) Bezeichnung Parameter Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, = 5 A, R L = 5 Ω Switching times, Ι e from 1% to 9% and from 9% to 1%, = 5 A, R L = 5 Ω Durchlassspannung Forward voltage = 1 A, t p = 1 µs = 5 A, t p = 1 µs Strahlstärke Radiant intensity = 1 A, t p = 1 μs Temperaturkoeffizient von I e bzw. Φ e Temperature coefficient of I e or Φ e = 1 A, t p = 1 ms Temperaturkoeffizient von V F Temperature coefficient of V F = 1 A, t p = 1 ms Temperaturkoeffizient von λ Temperature coefficient of λ = 1 A, t p = 1 ms Wert Value t r / t f 7 / 14 ns V F 1.5 (< 1.8) V F 2. (< 2.9) Einheit Unit V V I e 18 mw/sr TC I.3 %/K TC V 1 mv/k TC λ,centroid +.3 nm/k

4 Gesamtstrahlungsfluss 1) Φ e Total Radiant Flux 1) Φ e Bezeichnung Parameter Gesamtstrahlungsfluss Total Radiant Flux = 1 A, t p = 1 ms Φ e min 32 Φ e max 5 Werte Values -CB -DA -DB Einheit Unit mw mw 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1) / Only one bin in one packing unit (variation lower 1.6:1) Abstrahlcharakteristik Radiation Characteristics I rel = f (ϕ) OHL166 ϕ

5 Relative spektrale Emission Relative Spectral Emission I rel = f (λ) I rel 1 % 8 OHF4132 Durchlassstrom Forward Current = f (V F ) Single pulse, t p = 1 μs 1 1 A OHF3847 Relativer Gesamtstrahlungsfluss Relative Total Radiant Flux Φ e /Φ e (1mA) = f ( ) Single pulse, t p = 1 μs 1 1 Φ e Φ e (1 A) 1 OHF nm λ V 2.5 V F A 1 1 Max. zulässiger Durchlassstrom Max. Permissible Forward Current = f (T A ), R thjs = 9 K/W 1.1 A OHF4369 Zulässige Impulsbelastbarkeit Permissible Pulse Handling Capability = f (t p ), T S = 85 C, Duty cycle D = parameter 5.5 A t P = t P D T T OHF4177 D = C 13 T S s 1 t p

6 Maßzeichnung 1) Package Outlines...1 (.4) 6.2 (.244) 5.8 (.228) 4.25 (.167) 4.15 (.163) ø.81 (.31) ø.73 (.28) (R.85 (.33)) 1.9 (.75) 1.7 (.67) 5.35 (.21) 5.25 (.26) Cathode 11.2 (.441) 1.8 (.425) 1.2 (.47) Korrosionsfestigkeit besser als EN (Methode 4): mit erweitertem Korrosionstest: 4 C / 9%rh / 15ppm H2S / 336h Corrosion robustness better than EN (method 4): with enhanced corrosion test: 4 C / 9%rh / 15ppm H2S / 336h.8 (.31) (ø4.2 (.165)) 1.1 (.43).9 (.35) 2. (.79) 1.6 (.63).29 (.11).24 (.9).65 (.26).45 (.18) 7.2 (.283) 6.8 (.268) GPLY772 Kathodenkennung: Cathode mark: Gewicht / Approx. weight: Markierung mark.2 g Gurtung / Polarität und Lage Method of Taping / Polarity and Orientation Verpackungseinheit 8/Rolle, ø18 mm Packing unit 8/reel, ø18 mm Cathode/Collector Side 4 (.157) 1.55 (.61) 2 (.79) 1.75 (.69) 11.5 (.453) 12.4 (.488) 24 (.945).3 (.12).3 (.12) 7.35 (.289) 6.35 (.25) 8 (.315) 1.9 (.75) OHAY58 1) Maße in mm (inch) / Dimensions in mm (inch)

7 Empfohlenes Lötpaddesign Recommended Solder Pad Design 12. (.472) 11.6 (.457).3 (.12) 11.6 (.457) 2.3 (.91) 1 (.394) 1.6 (.63) 2.3 (.91) ø2.5 (.98) ø4. (.157) 1.6 (.63) Kupfer Copper ø4. (.157) Heatsink attach 3 Lötstellen 3 solder points Thermisch optimiertes PCB Thermal enhanced PCB Lötstopplack Solder resist Lötpasten Schablone Solder paste stencil Bare Copper Freies Kupfer Footprint OHAY681 Achtung: Anode und Heatsink sind elektrisch verbunden Attention: Anode and Heatsink are electrically connected

8 Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering (nach J-STD-2C) (acc. to J-STD-2C) T 3 C C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 1 s min 3 s max OHLA687 + C 26 C -5 C 245 C ±5 C +5 C 235 C - C s max Ramp Down 6 K/s (max) 1 s max 1 5 Ramp Up 3 K/s (max) 25 C s 3 t Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-9355 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered