IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4350

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IR-Lumineszenzdiode (8 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (8 nm) Lead (Pb) Free Product - RoHS Compliant SFH 43 Vorläufige Daten / Preliminary Data Wesentliche Merkmale

8 nm Anwendungen Infrarotbeleuchtung für CMOS Kameras Sensorik Datenübertragung Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot-

1 IR-Lumineszenzdiode (8 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (8 nm) Lead (Pb) Free Product - RoHS Compliant SFH 43 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Infrarot LED mit hoher Ausgangsleistung Abstrahlwinkel ± 13 Sehr hohe Strahlstärke Emissionswellenlänge typ. 8 nm Anwendungen Infrarotbeleuchtung für CMOS Kameras Sensorik Datenübertragung Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen und behandelt werden. Features High Power Infrared LED Emission angle ± 13 Very high radiant intensity Peak wavelength typ. 8 nm Applications Infrared Illumination for CMOS cameras Sensor technology Data transmission Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC and IEC yp ype Bestellnummer Ordering Code SFH 43 Q611A291 4 (typ. 7) Strahlstärkegruppierung 1) (I F = 1 ma, t p = 2 ms) Radiant Intensity Grouping 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel Ω =.1 sr / measured at a solid angle of Ω =.1 sr AENION - Observe Precautions For Handling - Electrostatic Sensitive Device

2 SFH 43 Grenzwerte ( A = 2 C) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Stoßstrom, t p = 1 μs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm 2 hermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm 2 each Kennwerte ( A = 2 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission I F = 1 ma Spektrale Bandbreite bei % von I max Spectral bandwidth at % of I max I F = 1 ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei I F = 1 ma, R L = Ω Switching times, Ι e from 1% to 9% and from 9% to 1%, I F = 1 ma, R L = Ω Wert Value op, stg C V R V I F 1 ma I FSM 1. A P tot 18 mw R thja 4 K/W Wert Value λ peak 8 nm Δλ 3 nm ϕ ± 13 Grad deg. A.9 mm 2 L B L W.3.3 mm² t r, t f 12 ns

3 SFH 43 Kennwerte ( A = 2 C) Characteristics (cont d) Durchlassspannung Forward voltage I F = 1 ma, t p = 2 ms I F = 1 A, t p = 1 µs Sperrstrom Reverse current V R = V Gesamtstrahlungsfluss otal radiant flux I F = 1 ma, t p = 2 ms emperaturkoeffizient von I e bzw. Φ e, I F = 1 ma emperature coefficient of I e or Φ e, I F = 1 ma emperaturkoeffizient von V F, I F = 1 ma emperature coefficient of V F, I F = 1 ma emperaturkoeffizient von λ, I F = 1 ma emperature coefficient of λ, I F = 1 ma V F V F 1. (< 1.8) 2.4 (< 3.) I R Wert Value not designed for reverse operation V V μa Φ e typ mw C I. %/K C V.7 mv/k C λ +.2 nm/k

4 SFH 43 Strahlstärke I e in Achsrichtung 1) gemessen bei einem Raumwinkel Ω =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Strahlstärke Radiant intensity I F = 1 ma, t p = 2 ms Strahlstärke Radiant intensity I F = 1 A, t p = 1 μs I e min 4 I e max 8 SFH 43 -U SFH 43 -V Werte Values SFH 43 -AW 1 2 SFH 43 -BW mw/sr mw/sr I e typ mw/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics I rel = f (ϕ) ϕ 1 1. OHF

5 SFH 43 Relative Spectral Emission I rel = f (λ) I rel 1 % OHL1714 Radiant Intensity Single pulse, t p = 2 μs I I 1 1 e e (1 ma) I e I e 1 ma = f (I F ) OHL171 Max. Permissible Forward Current I F = f ( A ), R thja = 4 K/W Ι F 12 ma 1 7 OHR Forward Current I F = f (V F ) Single pulse, t p = 2 μs I F 1 A nm λ 9 OHL ma 1 I F Permissible Pulse Handling Capability I F = f (τ), A = 2 C, duty cycle D = parameter OHF2 1.6 t P A I t F D P = IF C D = V3 V F t p s

6 SFH 43 Maßzeichnung Package Outlines 2.4 (.1) spacing.6 (.24).4 (.16).7 (.28).4 (.16) 1.8 (.71) 1.2 (.47) Surface not flat.8 (.31).4 (.16) (.2) 4. (.177) 4.1 (.161) 3.9 (.14) Chip position 3.3 (.13) 6.3 (.248).9 (.232) 3.1 (.122) 2.9 (.114).6 (.24).4 (.16) 4. (.17) 3.6 (.142) GEMY6689 Maße in mm (inch) / Dimensions in mm (inch). Gehäuse / Package Anschlussbelegung Pin configuration 3 mm, klares Gehäuse / 1/1", clear package 1 = Anode / anode 2 = Kathode / cathode Empfohlenes Lötpaddesign Recommended Solder Pad Design Wellenlöten W W Soldering Anode 4.8 (.189) 4 (.17) OHLPY98 Maße in mm (inch) / Dimensions in mm (inch)

SFH 43 Lötbedingungen Soldering Conditions Wellenlöten (W) (nach CECC 82) W Soldering (acc. to CECC 82) 3 C 2 2 23 C... 26 C 1. Welle 1. wave 1 s 2. Welle 2.

7 SFH 43 Lötbedingungen Soldering Conditions Wellenlöten (W) (nach CECC 82) W Soldering (acc. to CECC 82) 3 C C C 1. Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY98 1 ca 2 K/s K/s 2 K/s 1 1 C C 2 K/s Zwangskühlung forced cooling s 2 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. he information describes the type of component and shall not be considered as assured characteristics. erms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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