GRISU Projekt. Sven Löchner. EE-Gruppenmeeting
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1 GRISU Projekt Sven Löchner GSI Darmstadt EE-Gruppenmeeting 6. Juni 2011 Experiment Electronics
2 Agenda GRISU Project ASIC Single Event Effects Testing site Microprobe Testing site Total Ionising Dose Testing Summary 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 2
3 GRISU Projekt Projektziele: Untersuchung des UMC 0,18µm CMOS Prozesses hinsichtlich: Schadensanfälligkeit gegen SEUs und SETs Wirkungsquerschnitte für verschiedene Flip-Flop Architekturen und Layouts Bestimmung des kritische Linearen Energie Transfers (LET crit ) Q crit Empfindlichkeit des Prozesses für SET Ereignisse CMOS Transistoren Vergleich Kennlinienmessungen einzelner Transistor Simulationsmodell Total Ionising Dose (TID) Charakterisierung des UMC 0,18µm Prozesses bei Bestrahlung, speziell Verhalten von Leckströmen, Verschiebung der Schaltschwellen, Juni 2011 EE-Gruppenmeeting Experiment Electronics 3
4 GRISU Testchip GRISU Testchip UMC 0,18µm Prozess 1,5 x 1,5 mm² Teststrukturen für SEU Messungen Ringoszillator für TID / SEU Messungen Teststrukturen für TID Messungen Teststrukturen für SET Messungen, Q crit 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 4
5 Strahlungseffekte - SEE Für dieses Projekt vorerst nur interessant: Soft errors: Single Event Upset (SEU) Kippen eines Bits (bitflip), bzw. Änderung des Zustands einer digitalen Schaltung Single Event Transient (SET) kurzzeitigen Änderung des Signalpegels in einer elektronischen Schaltung (glitch) 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 5
6 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 6 Ladungssammlung Querschnitt durch den ASIC Ladungssammlung unter dem Gate
7 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 7 Linearer Energie Transfer (LET) Die an das Halbleitermaterial abzugebende Teilchenenergie, ab der ein SEE in einem Bauteil auftreten kann, wird als LET crit bezeichnet. LET steht für Linearer Energie Transfer als Maßeinheit: MeV cm²/mg (bezogen auf Si für MOS) LET crit =.6eV Q e ρ d d - sensitive Eindringtiefe 3 crit ρ - Materialdichte (Si: 2,33g/cm 3 ) Si Typische Werte für den aktuell benutzten CMOS Prozess: d = 0, µm Q crit = fc LET crit zwischen 1,5 und 12 MeV cm²/mg
8 Niederenergie Bestrahlplatz X6 Aufbau eines Messplatzes für die ASIC-Bestrahlung mit Schwerionen am Bestrahlplatz X6 (in Zusammenarbeit mit der Biophysik Gruppe) Strahlüberwachung mittels Ionisationskammer genau Dosimetrie möglich Bestrahlung der Chips in Luft Einfacher Zugang Kleiner Nachteil: Nur eine Ionensorte während einer Strahlzeit festgelegter LET Bereich für eine Ionensorte X6 Bestrahlplatz an der GSI 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 8
9 SEE Tests SEE Tests mit Schwerionen an der GSI: X6 Bestrahlplatz 11,4 MeV/u 7 durchgeführte Bestrahlungstests C-12 (3x) Ar-40 Ni-58 Ru-96 Xe-132 LET im Bereich von MeV cm²/mg (SiO 2 ) Q = fc 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 9
10 LET Messbereichsübersicht Übersicht der LET Bereiche der unterschiedlichen Bestrahlungstests 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 10
11 Wirkungsquerschnitt (Inv.) C-12 Ar-40 Ni-58 Ru-96 Xe-132 LET crit = 1,93 MeV cm²/mg σ sat = 1, cm²/bit 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 11
12 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 12 Cross-section section (DF) LET = 4 MeV cm²/mg
13 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 13 Dual Interlock Cell (DICE) DICE (Dual Interlock Cell) memory technologies are (more or less) immune against SEU flips. Reference: T. Calin, M. Nicolaidis, R. Velazco Upset Hardened Memory Design for Submicron CMOS Technology IEEE Transactions on Nuclear Science, Vol. 43, No. 6, December 1996
14 Layout DICE Latch 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 14
15 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 15 Layout Sense Amp.. DICE FF
16 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 16 SEE - Zusammenfassung Zusammenfassung: erfolgreiche Durchführung von 7 Bestrahlungstests mit unterschiedlichen Schwerionen Messung von LET crit und σ sat für alle SEE Teststrukturen Weiterer Klärungsbedarf, warum die beiden DICE-Zellen nicht so SEU immun sind, wie erwartet Ionisationskammer: Auslese mit QFW Chip und aktiven Stromteiler Anbindung des QFW an das FPGA-Board Ausgangspunkt für das Profilgitter-Auslesesystem mit der Strahldiagnose
17 Microprobe testing site Setup of a single hit heavy ion test environment for ASIC irradiation (micro beam test line) possibility of a localised radiation of the DUT resolution: ~800nm scanning area: down to 10x10µm² energy of ions: 4.8 MeV/u First results from Xe-132 test: plot shows overlay of detected ion positions (3σ) which triggered an SET and chip layout SET homogeneity map of ASIC 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 17
18 Testmöglichkeiten GRISU 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 18
19 Progress (since last meeting) Microprobe testing 2nd testing with the GSI microprobe system (Au-197 run 02/2010) Improve of the spatial resolution (~ 500nm) First results are combined together with ASIC layout Position of D-FlipFlop triggered Overlay of SEE with both events additional triggered DFF events buffers loaded with 0 1 Redundant layout structures should keep at least 1um apart 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 19
20 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 20 Strahlungseffekte - TID Total Ionising Dose (TID) Langfristige Auswirkungen auf CMOS Chips durch Strahlung Zu Grunde liegende Ursachen: Einfangen von Löcher im Silizium Dioxid (in der Nähe der Grenzschicht zwischen SiO 2 und Si) Die Schaffung von SiO 2 -Si Schnittstellenfallen Verschiebung der Schwellenspannung von Transistoren Ansteigen des Leckstromverhaltens von Transistoren
21 Total Ionising Dose (TID) Test TID-Test mit Röntgenstrahlen Bestrahlungsplatz beim Institut für Experimentale Kernphysik der Universität Karlsruhe, Forschungszentrum KA 60keV Röntgenstrahlen krad/h Dauerbetrieb möglich einfacher Zugang 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 21
22 TID tests single transistors Measurements of the transistor characteristics and extraction of the leakage current for different dose levels (e.g. NMOS 0.24/1.80) In total 6 chips are irradiated Total dose up to 2.5Mrad Increase of leakage current no significant increase up to 200krad by 3 orders of magnitude after 2.5Mrad 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 22
23 TID tests single transistors Measurements of the transistor characteristics and calculation of the threshold voltages for different dose levels (e.g. NMOS 0.24/1.80) In total 6 chips are irradiated Total dose up to 2.5Mrad Decrease of threshold voltage ~ 20% after 1Mrd no further change after 1Mrad 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 23
24 TID tests single transistors Measurements of the annealing and extraction of the leakage current for different dose levels (e.g. NMOS 0.24/1.80) Detailed annealing scans only with one 1 chip 2.5Mrad total dose Annealing at room temp. Decrease of leakage current after 6 weeks almost back to pre-rad value 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 24
25 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 25 TID summary TID testing with X-rays Irradiation facility at Institute for Experimental Nuclear Physics, University of Karlsruhe 60keV X-ray, krad/h GRISU chips tested Total dose between 800krad and 2500krad(SiO 2 ) Operating dose rate between 200krad/h and 580krad/h Measurements: leakage current, threshold shift, transition times, total power consumption, annealing, of non-hardened digital library UMC process shows good annealing at room temperature (at least at high dose rates) Simulation models slightly differs from measured characteristics (especially between small and large Ugs) Not shown: Offset current for zero-vth transistors are much higher than predicted from simulation Measured transition time for minimum size inverters differs ~40% from simulation
26 6. Juni 2011 EE-Gruppenmeeting Experiment Electronics 26 Work progress at GSI so far Development of a UMC 0.18µm Test-ASIC (GRISU) Installation of testing site for SEE measurements Installation of a micro beam testing site for single ion hit measurements TID testing of the UMC 0.18µm process at Karlsruhe Neutron test (scheduled autumn 2011, FAIR accelerator physics dep.) TID irradiation with low dose rates (planned with SD) Long term test with gamma source (for example Co-60) Right now nothing is contradicting against the UMC 0.18µm process Emerged follow-up projects: Beam profile measurement readout electronic for SD Heavy ion radiation setup for commercial radiation testing ( Technology Transfer Department) Technical advice for electronic devices in radiation environments ( Beam Diagnostic Dep., Accelerator Physics Dep., BD Thing Group)
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