BSM 100 GB 60 DLC. Technische Information / Technical Information. Höchstzulässige Werte / Maximum rated values

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1 s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties KollektorEmitterSperrspannung collectoremitter voltage V CES V KollektorDauergleichstrom DCcollector current Periodischer Kollektor Spitzenstrom repetitive peak collector current GesamtVerlustleistung total power dissipation GateEmitterSpitzenspannung gateemitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I 2 t value, Diode IsolationsPrüfspannung insulation test voltage T c = 7 C I C,nom. A T c = 25 C I C 13 A t P = 1ms, T c = 7 C I CRM 2 A T c = 25 C, Transistor P tot 445 W V GES +/ 2V V I F A t P = 1ms I FRM 2 A V R = V, t p = 1ms, T vj = 125 C I 2 t 1.25 A 2 s RMS, f= 5Hz, t= 1min. V ISOL 2,5 kv Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. KollektorEmitter Sättigungsspannung collectoremitter saturation voltage I C = A, V GE = 15V, T vj = 25 C V CE sat 1,95 2,45 V I C = A, V GE = 15V, T vj = 125 C 2,2 V GateSchwellenspannung gate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance KollektorEmitter Reststrom collectoremitter cutoff current GateEmitter Reststrom gateemitter leakage current I C = 1,5mA, V CE = V GE, T vj = 25 C V GE(th) 4,5 5,5 6,5 V C ies 4,3 nf f= 1MHz, T vj = 25 C, V CE = 25V, V GE = V C res,4 nf V CE = V, V GE = V, T vj = 25 C 1 5 µa V CE = V, V GE = V, T vj = 125 C 1 ma V CE = V, V GE = 2V, T vj = 25 C I GES na I CES prepared by: Andreas Vetter date of publication: 2426 approved by: Michael Hornkamp revision: 1 1 (8)

2 s Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turnon energy loss per pulse Abschaltverlustenergie pro Puls turnoff energy loss per pulse Kurzschlußverhalten SC Data I C = A, V CC = 3V V GE = ±15V, R G = 2,2Ω, T vj = 25 C t d,on 25 ns V GE = ±15V, R G = 2,2Ω, T vj = 125 C 26 ns I C = A, V CC = 3V V GE = ±15V, R G = 2,2Ω, T vj = 25 C t r 1 ns V GE = ±15V, R G = 2,2Ω, T vj = 125 C 11 ns I C = A, V CC = 3V V GE = ±15V, R G = 2,2Ω, T vj = 25 C t d,off 13 ns V GE = ±15V, R G = 2,2Ω, T vj = 125 C 15 ns I C = A, V CC = 3V V GE = ±15V, R G = 2,2Ω, T vj = 25 C t f 2 ns V GE = ±15V, R G = 2,2Ω, T vj = 125 C 3 ns I C = A, V CC = 3V, V GE = 15V R G = 2,2Ω, T vj = 125 C, L σ = 15nH I C = A, V CC = 3V, V GE = 15V R G = 2,2Ω, T vj = 125 C, L σ = 15nH t P 1µsec, V GE 15V T vj 125 C, V CC =3V, V CEmax = V CES L σce di/dt E on E off I SC 1, 2,9 45 mj mj A Modulinduktivität stray inductance module ModulLeitungswiderstand, Anschlüsse Chip lead resistance, terminals chip L σce nh T c = 25 C R CC'+EE' 1, mω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung I F = A, V GE = V, T vj = 25 C 1,25 1,6 V V F forward voltage I F = A, V GE = V, T vj = 125 C 1,2 V Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recoverred charge Abschaltenergie pro Puls reverse recovery energy I F = A, di F /dt= 4A/µsec V R = 3V, V GE = 1V, T vj = 25 C I RM 15 A V R = 3V, V GE = 1V, T vj = 125 C 1 A I F = A, di F /dt= 4A/µsec V R = 3V, V GE = 1V, T vj = 25 C Q r 7,7 µc V R = 3V, V GE = 1V, T vj = 125 C 13 µc I F = A, di F /dt= 4A/µsec V R = 3V, V GE = 1V, T vj = 25 C E rec mj V R = 3V, V GE = 1V, T vj = 125 C 3,2 mj 2 (8)

3 s Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Diode / diode, DC R thjc min. typ. max.,28 K/W,5 K/W ÜbergangsWärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature pro Modul / per module λ Paste = 1W/m*K / λ grease = 1W/m*K R thck,3 K/W T vj 15 C T op 125 C T stg 125 C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage insulation Al 2 O 3 15 mm Luftstrecke clearance 8,5 mm CTI comperative tracking index 275 Anzugsdrehmoment für mech. Befestigung mounting torque Schraube M6 screw M6 M1 5 Nm % Gewicht weight G 1 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8)

4 s 2 Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V 1 1 Tvj = 25 C Tvj = 125 C ,,5 1, 1,5 2, 2,5 3, 3,5 V CE [V] Ausgangskennlinienfeld (typisch) I C = f (V CE ) Output characteristic (typical) T vj = 125 C VGE = 8V VGE = 9V VGE = 1V VGE = 12V VGE = 15V VGE = 2V 2,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 4 (8)

5 s 2 Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = 2V 1 1 Tvj = 25 C Tvj = 125 C V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) Tvj = 25 C Tvj = 125 C I F [A] 12 2,,2,4,6,8 1, 1,2 1,4 1,6 V F [V] 5 (8)

6 s Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) R G,on = 2,2Ω, Ω,=R G,off = 2,2Ω, V CC = 3V, T vj = 125 C 6, 5, Eon Eoff Erec 4, E [mj] 3, 2, 1,, Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) I C = A, V CC = 3V, T vj = 125 C 3,5 3, 2,5 E [mj] 2, 1,5 1,,5 Eon Eoff Erec, R G [Ω] 6 (8)

7 s Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t) 1 Z thjc [K / W],1,1 Zth:IGBT Zth:Diode,1,1,1,1 1 1 t [sec] i r i [K/kW] : IGBT 11,9 146,7 98,7 22,7 τ i [sec] : IGBT,18,2,651,6626 r i [K/kW] : Diode 176,2 169, 16,1 48,7 τ i [sec] : Diode,487,169,169,9115 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) V GE = +15V, R G,off = 2,2Ω, T vj = 125 C IC,Modul IC,Chip V CE [V] 7 (8)

8 s Gehäusemaße / Schaltbild Package outline / Circuit diagram 13 M5 1 2,8 x, (8)

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