BSM35GP120. Technische Information / Technical Information. Elektrische Eigenschaften / Electrical properties.

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1 s BSM35GP12 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert RMS forward current per chip Dauergleichstrom DC forward current V RRM 16 V I FRMSM 4 A T C = 8 C I d 35 A Stoßstrom Grenzwert t P = ms, T vj = 25 C I FSM 315 A surge forward current t P = ms, T vj = 15 C 26 A Grenzlastintegral t P = ms, T vj = 25 C I 2 t 5 A 2 s I 2 t - value t P = ms, T vj = 15 C 34 A 2 s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage V CES 12 V Kollektor-Dauergleichstrom Tc = 8 C I C,nom. 35 A DC-collector current T C = 25 C I C 45 A Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage t P = 1 ms, T C = 8 C I CRM 7 A T C = 25 C P tot 23 W V GES +/- 2V V Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I 2 t - value Tc = 8 C I F 35 A t P = 1 ms I FRM 7 A V R = V, t p = ms, T vj = 125 C I 2 t 3 A 2 s Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage V CES 12 V Kollektor-Dauergleichstrom T C = 8 C I C,nom. 17,5 A DC-collector current T C = 25 C I C 35 A Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current t P = 1 ms, T C = 8 C I CRM 35 A T C = 25 C P tot 18 W V GES +/- 2V V Tc = 8 C I F A t P = 1 ms I FRM 2 A prepared by: Andreas Schulz date of publication: approved by: Robert Severin revision: 5 1(11) DB-PIM- (2).xls

3 s BSM35GP12 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip min. typ. max. L σce - - nh T C = 25 C R CC'+EE' mω Diode Wechselrichter/ Diode Inverter min. typ. max. Durchlaßspannung V GE = V, T vj = 25 C, I F = 35 A V F - 1,95 2,45 V forward voltage V GE = V, T vj = 125 C, I F = 35 A - 1,8 - V Rückstromspitze I F =I Nenn, - di F /dt = 14A/µs peak reverse recovery current V GE = -V, T vj = 25 C, V R = 6 V I RM A V GE = -V, T vj = 125 C, V R = 6 V A Sperrverzögerungsladung I F =I Nenn, - di F /dt = 14A/µs recovered charge V GE = -V, T vj = 25 C, V R = 6 V Q r - 3,5 - µas V GE = -V, T vj = 125 C, V R = 6 V - 7,5 - µas Abschaltenergie pro Puls I F =I Nenn, - di F /dt = 14A/µs reverse recovery energy V GE = -V, T vj = 25 C, V R = 6 V E RQ - 1,3 - mws V GE = -V, T vj = 125 C, V R = 6 V - 2,5 - mws Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max. Kollektor-Emitter Sättigungsspannung V GE = 15V, T vj = 25 C, I C = 17,5 A V CE sat - 2,3 2,75 V collector-emitter saturation voltage V GE = 15V, T vj = 125 C, I C = 17,5 A - 2,7 - V Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance V CE = V GE, T vj = 25 C, I C =,6mA V GE(TO) 4,5 5,5 6,5 V f = 1MHz, T vj = 25 C V CE = 25 V, V GE = V C ies - 1, - nf Kollektor-Emitter Reststrom V GE = V, T vj = 25 C, V CE = 12 V I CES - 1, 5 µa collector-emitter cut-off current V GE = V, T vj = 125 C, V CE = 12 V - 1,2 - ma Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES na Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max. Durchlaßspannung T vj = 25 C, I F = 17,5 A V F - 2,7 3,5 V forward voltage T vj = 125 C, I F = 17,5 A - 2,6 - V NTC-Widerstand/ NTC-Thermistor min. typ. max. Nennwiderstand rated resistance T C = 25 C R kω Abweichung von R deviation of R T C = C, R = 493 Ω R/R -5 5 % Verlustleistung power dissipation B-Wert B-value T C = 25 C P 25 2 mw R 2 = R 1 exp [B(1/T 2-1/T 1 )] B 25/ K 3(11) DB-PIM- (2).xls

4 s BSM35GP12 Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode R thjc K/W thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - -,55 K/W Diode Wechsr./ Diode Inverter - -,8 K/W Trans. Bremse/ Trans. Brake - -,7 K/W Diode Bremse/ Diode Brake - - 2,3 K/W Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode λ Paste=1W/m*K R thck -,8 - K/W thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter λ grease=1w/m*k -,4 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Diode Wechsr./ Diode Inverter -,8 - K/W T vj C T op C T stg C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al 2 O 3 CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung M 3 Nm mounting torque ±% Gewicht weight 225 G 18 g 4(11) DB-PIM- (2).xls

5 s BSM35GP12 Ausgangskennlinienfeld Wechselr. (typisch) I C = f (V CE ) Output characteristic Inverter (typical) V GE = 15 V Tj = 25 C Tj = 125 C 4 IC [A] 3 2,5 1 1,5 2 2,5 3 3,5 4 4,5 5 V CE [V] 7 Ausgangskennlinienfeld Wechselr. (typisch) I C = f (V CE ) Output characteristic Inverter (typical) T vj = 125 C VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V IC [A] 3 2,5 1 1,5 2 2,5 3 3,5 4 4,5 5 V CE [V] 5(11) DB-PIM- (2).xls

6 s BSM35GP12 Übertragungscharakteristik Wechselr. (typisch) I C = f (V GE ) Transfer characteristic Inverter (typical) V CE = 2 V Tj = 25 C Tj = 125 C IC [A] V GE [V] 7 Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) I F = f (V F ) Forward characteristic of FWD Inverter (typical) Tj = 25 C Tj = 125 C IF [A] 3 2,5 1 1,5 2 2,5 3 V F [V] 6(11) DB-PIM- (2).xls

7 s BSM35GP12 Schaltverluste Wechselr. (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) V CC = Switching losses Inverter (typical) T j = 125 C, V GE = ±15 V, R Gon = R Goff = 6 V 22 Ohm Eon Eoff Erec E [mws] I C [A] 7 Schaltverluste Wechselr. (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses Inverter (typical) T j = 125 C, V GE = +-15 V, I c = I nenn, V CC = 6 V 6 5 Eon Eoff Erec E [mws] R G [W] 7(11) DB-PIM- (2).xls

8 s BSM35GP12 Transienter Wärmewiderstand Wechselr. Transient thermal impedance Inverter Z thjc = f (t) 1 Zth-IGBT Zth-FWD ZthJC [K/W],1,1,1,1,1 1 t [s] 8 Sicherer Arbeitsbereich Wechselr. (RBSOA) I C = f (V CE ) Reverse bias save operating area Inverter (RBSOA) T vj = 125 C, V GE = ±15V, R G = 22 Ohm IC,Modul IC,Chip IC [A] V CE [V] 8(11) DB-PIM- (2).xls

9 s BSM35GP12 Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) I C = f (V CE ) Output characteristic brake-chopper-igbt (typical) V GE = 15 V Tj = 25 C Tj = 125 C 2 IC [A] 15 5,5 1 1,5 2 2,5 3 3,5 4 4,5 V CE [V] 35 Durchlaßkennlinie der Brems-Chopper-Diode (typisch) I F = f (V F ) Forward characteristic of brake-chopper-fwd (typical) Tj = 25 C Tj = 125 C IF [A] 15 5,5 1 1,5 2 2,5 3 3,5 4 V F [V] 9(11) DB-PIM- (2).xls

10 s BSM35GP12 7 Durchlaßkennlinie der Gleichrichterdiode (typisch) I F = f (V F ) Forward characteristic of Rectifier Diode (typical) Tj = 25 C Tj = 15 C IF [A] 3 2,2,4,6,8 1 1,2 1,4 1,6 V F [V] NTC- Temperaturkennlinie (typisch) NTC- temperature characteristic (typical) R = f (T) Rtyp R[W ] T C [ C] (11) DB-PIM- (2).xls

11 s BSM35GP12 Schaltplan/ Circuit diagram NTC Gehäuseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11) DB-PIM- (2).xls

12 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via / sales & contact. Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via / sales & contact.

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BSM10GP120. Technische Information / Technical Information. Elektrische Eigenschaften / Electrical properties. IGBT-Module IGBT-Modules Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage