s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage T vj = 25 C V CES 1 V Kollektor-Dauergleichstrom T C = 7 C I C,nom. A DC-collector current T C = 25 C I C 275 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t P = 1 ms, T C = 8 C I CRM A Gesamt-Verlustleistung total power dissipation T C =25 C, Transistor P tot 1,4 kw Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES +/- 2V V Dauergleichstrom DC forward current I F A Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I 2 t - value, Diode Isolations-Prüfspannung insulation test voltage t P = 1 ms I FRM A V R = V, t p = 1ms, T Vj = 125 C I 2 t 18 k A 2 s RMS, f = Hz, t = 1 min. V ISOL 2,5 kv Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung I C = A, V GE = 15V, T vj = 25 C V CE sat - 3,2 3,7 V collector-emitter saturation voltage I C = A, V GE = 15V, T vj = 125 C - 3,85 - V Gate-Schwellenspannung gate threshold voltage I C = 8mA, V CE = V GE, T vj = 25 C V GE(th) 4,5 5,5 6,5 V Gateladung gate charge V GE = -15V...+15V Q G - 2,1 - µc Eingangskapazität input capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C ies - 13 - nf Rückwirkungskapazität reverse transfer capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C res -,85 - nf Kollektor-Emitter Reststrom collector-emitter cut-off current V CE = 1V, V GE = V, T vj = 25 C I CES - - 5 ma Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES - - na prepared by: MOD-D2; Martin Knecht date of publication: approved by: SM TM; Wilhelm Rusche revision: 3. 1 (8) DB 3.
s Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) I C = A, V CE = 6V turn on delay time (inductive load) V GE = ±15V, R G = 4,7Ω, T vj = 25 C t d,on -,1 - µs V GE = ±15V, R G = 4,7Ω, T vj = 125 C -,13 - µs Anstiegszeit (induktive Last) I C = A, V CE = 6V rise time (inductive load) V GE = ±15V, R G = 4,7Ω, T vj = 25 C t r -,9 - µs V GE = ±15V, R G = 4,7Ω, T vj = 125 C -,1 - µs Abschaltverzögerungszeit (ind. Last) I C = A, V CE = 6V turn off delay time (inductive load) V GE = ±15V, R G = 4,7Ω, T vj = 25 C t d,off -,53 - µs V GE = ±15V, R G = 4,7Ω, T vj = 125 C -,59 - µs Fallzeit (induktive Last) I C = A, V CE = 6V fall time (inductive load) V GE = ±15V, R G = 4,7Ω, T vj = 25 C t f -,6 - µs V GE = ±15V, R G = 4,7Ω, T vj = 125 C -,7 - µs Einschaltverlustenergie pro Puls I C = A, V CE = 6V, V GE = ±15V turn-on energy loss per pulse R G = 4,7Ω, T vj = 125 C, L σ = 6nH E on - 19 - mj Abschaltverlustenergie pro Puls I C = A, V CE = 6V, V GE = ±15V turn-off energy loss per pulse R G = 4,7Ω, T vj = 125 C, L σ = 6nH E off - 15 - mj Kurzschlußverhalten t P 1µs, V GE 15V, R G = 4,7Ω SC Data T vj 125 C, V CC =9V, V CEmax =V CES -L σce di/dt I SC - 1 - A Modulinduktivität stray inductance module Anschlüsse / terminals 2-3 L σce - 2 - nh Modul Leitungswiderstand, Anschlüsse Chip module lead resistance, terminals chip pro Zweig / per arm, T C =25 C R CC +EE -,7 - mω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung I F = A, V GE = V, T vj = 25 C V F - 2, 2,4 V forward voltage I F = A, V GE = V, T vj = 125 C - 1,7 - V Rückstromspitze I F = A, - di F /dt = A/µs peak reverse recovery current V R = 6V, V GE = -15V, T vj = 25 C I RM - 14 - A V R = 6V, V GE = -15V, T vj = 125 C - 22 - A Sperrverzögerungsladung I F = A, - di F /dt = A/µs recovered charge V R = 6V, V GE = -15V, T vj = 25 C Q r - 15 - µc V R = 6V, V GE = -15V, T vj = 125 C - 4 - µc Abschaltenergie pro Puls I F = A, - di F /dt = A/µs reverse recovery energy V R = 6V, V GE = -15V, T vj = 25 C E rec - 8 - mj V R = 6V, V GE = -15V, T vj = 125 C - 19 - mj 2 (8) DB 3.
s Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor,dc, pro Modul / per module R thjc - -,45 K/W thermal resistance, junction to case Transistor / transistor,dc, pro Zweig / per arm - -,9 K/W Diode / Diode, DC, pro Modul / per module - -,9 K/W Diode / Diode, DC, pro Zweig / per arm - -,18 K/W Übergangs-Wärmewiderstand pro Modul / per module R thck -,1 - K/W thermal resistance, case to heatsink pro Zweig / per arm -,2 - K/W λ Paste = 1 W/m*K / λ grease = 1 W/m*K Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj max - - C Betriebstemperatur operation temperature T vj op -4-125 C Lagertemperatur storage temperature T stg -4-125 C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al 2 O 3 Kriechstrecke creepage distance 2 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 425 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube M6 / screw M6 M 3, - 6, Nm Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M6 M 2,5-5, Nm Gewicht weight G 34 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) DB 3.
s Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V Tvj = 25 C Tvj = 125 C,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, V CE [V] Ausgangskennlinienfeld (typisch) I C = f (V CE ) Output characteristic (typical) T vj = 125 C VGE = 8V VGE = 9V VGE = 1V VGE = 12V VGE = 15V VGE = 2V,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, V CE [V] 4 (8) DB 3.
s Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = 2V Tvj = 25 C Tvj = 125 C 5 6 7 8 9 1 11 12 V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) Tvj = 25 C Tvj = 125 C I F [A],,5 1, 1,5 2, 2,5 3, V F [V] 5 (8) DB 3.
s Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) V GE =±15V, R G =4,7 Ω, V CE = 6V, T vj = 125 C 6,, 4, Eon Eoff Erec E [mj] 3, 2, 1,, Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) V GE =±15V, I C = A, V CE = 6V, T vj = 125 C, 9, 8, 7, Eon Eoff Erec E [mj] 6,, 4, 3, 2, 1,, 5 1 15 2 25 3 R G [Ω] 6 (8) DB 3.
s 1 Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t),1 Z thjc [K / W],1 Zth:Diode Zth:IGBT,1,1,1,1 1 1 t [s] i 1 2 3 4 r i [K/kW] : IGBT 4,8 3,51 19,37,4 τ i [s] : IGBT,6,29,43 1,14 r i [K/kW] : Diode 49,13 73,21 37,92 19,74 τ i [s] : Diode,6,35,33,997 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) V GE =±15V, R G = 4,7 Ω, T vj = 125 C 4 IC,Modul IC,Chip 6 8 1 1 V CE [V] 7 (8) DB 3.
s Gehäusemaße / Schaltbild Package outline / Circuit diagram 8 (8) DB 3.
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