Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage T vj =125 C T vj =25 C T vj =-4 C V CES 65 63 58 V Kollektor-Dauergleichstrom T C = 8 C I C,nom. 6 A DC-collector current T C = 25 C I C 12 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t P = 1 ms, T C = 8 C I CRM 12 A Gesamt-Verlustleistung total power dissipation T C =25 C, Transistor P tot 11,4 kw Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES +/- 2V V Dauergleichstrom DC forward current I F 6 A Periodischer Spitzenstrom repetitive peak forw. current t P = 1 ms I FRM 12 A Grenzlastintegral der Diode I 2 t - value, Diode V R = V, t p = 1ms, T Vj = 125 C I 2 t 165 k A 2 s Isolations-Prüfspannung insulation test voltage RMS, f = 5 Hz, t = 1 min. V ISOL 1,2 kv Teilentladungs Aussetzspannung partial discharge extinction voltage RMS, f = 5 Hz, Q PD typ. 1pC (acc. To IEC 1287) V ISOL 5,1 kv Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung I C = 6A, V GE = 15V, T vj = 25 C V CE sat - 4,3 4,9 V collector-emitter saturation voltage I C = 6A, V GE = 15V, T vj = 125 C - 5,3 5,9 V Gate-Schwellenspannung gate threshold voltage I C = 1mA, V CE = V GE, T vj = 25 C V GE(th) 6,4 7, 8,1 V Gateladung gate charge V GE = -15V... +15V Q G - 8,4 - µc Eingangskapazität input capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C ies - 84 - nf Kollektor-Emitter Reststrom collector-emitter cut-off current V CE = 63V, V GE = V, T vj = 25 C V CE = 65V, V GE = V, T vj = 125 C I CES -,6 6 - ma ma Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES - - 4 na prepared by: Dr. Oliver Schilling date of publication: 22-7-5 approved by: Dr. Schütze 22-7-5 revision/status: Series 1 1 FZ 6 R65 KF1 (final1).xls
Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) I C = 6A, V CE = 36V turn on delay time (inductive load) V GE = ±15V, R Gon = 4,3Ω, C GE =68nF, T vj = 25 C, t d,on -,75 - µs V GE = ±15V, R Gon = 4,3Ω, C GE =68nF, T vj = 125 C, -,72 - µs Anstiegszeit (induktive Last) I C = 6A, V CE = 36V rise time (inductive load) V GE = ±15V, R Gon = 4,3Ω, C GE =68nF, T vj = 25 C, t r -,37 - µs V GE = ±15V, R Gon = 4,3Ω, C GE =68nF, T vj = 125 C, -,4 - µs Abschaltverzögerungszeit (ind. Last) I C = 6A, V CE = 36V turn off delay time (inductive load) V GE = ±15V, R Goff = 25Ω, C GE =68nF, T vj = 25 C, t d,off - 5,5 - µs V GE = ±15V, R Goff = 25Ω, C GE =68nF, T vj = 125 C, - 6, - µs Fallzeit (induktive Last) I C = 6A, V CE = 36V fall time (inductive load) V GE = ±15V, R Goff = 25Ω, C GE =68nF, T vj = 25 C, t f -,4 - µs V GE = ±15V, R Goff = 25Ω, C GE =68nF, T vj = 125 C, -,5 - µs Einschaltverlustenergie pro Puls I C = 6A, V CE = 36V, V GE = ±15V turn-on energy loss per pulse R Gon = 4,3Ω, C GE =68nF, T vj = 125 C, L σ = 28nH E on - 59 - mj Abschaltverlustenergie pro Puls I C = 6A, V CE = 36V, V GE = ±15V turn-off energy loss per pulse R Goff = 25Ω, C GE =68nF, T vj = 125 C, L σ = 28nH E off - 35 - mj Kurzschlußverhalten t P 1µsec, V GE 15V, acc to appl.note 22/5 SC Data T Vj 125 C, V CC =44V, V CEmax =V CES -L σce di/dt I SC - 3 - A Modulinduktivität stray inductance module L σce - 18 - nh Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip R CC +EE -,12 - mω Diode / Diode min. typ. max. Durchlaßspannung I F = 6A, V GE = V, T vj = 25 C V F 3, 3,8 4,6 V forward voltage I F = 6A, V GE = V, T vj = 125 C 3,9 4,7 V Rückstromspitze I F = 6A, - di F /dt = 2A/µs peak reverse recovery current V R = 36V, V GE = -1V, T vj = 25 C I RM - 8 - A V R = 36V, V GE = -1V, T vj = 125 C - 1 - A Sperrverzögerungsladung I F = 6A, - di F /dt = 2A/µs recovered charge V R = 36V, V GE = -1V, T vj = 25 C Q r - 55 - µc V R = 36V, V GE = -1V, T vj = 125 C - 15 - µc Abschaltenergie pro Puls I F = 6A, - di F /dt = 2A/µs reverse recovery energy V R = 36V, V GE = -1V, T vj = 25 C E rec - 66 - mj V R = 36V, V GE = -1V, T vj = 125 C - 16 - mj 2 FZ 6 R65 KF1 (final1).xls
Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC R thjc - -,11 K/W thermal resistance, junction to case Diode/Diode, DC - -,21 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Lagertemperatur storage temperature pro Modul / per Module λ Paste 1 W/m*K / λ grease 1 W/m*K Schaltvorgänge IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) R thck -,6 - K/W T vj, max - - 15 C T vj,op -4-125 C T stg -4-125 C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index AlN 56 mm 26 mm >6 Anzugsdrehmoment f. mech. Befestigung Schraube /screw M6 M 5 Nm mounting torque Anzugsdrehmoment f. elektr. Anschlüsse Anschlüsse / terminals M4 2 Nm M terminal connection torque Anschlüsse / terminals M8 8-1 Nm Gewicht weight G 14 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 FZ 6 R65 KF1 (final1).xls
13 Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V 12 11 1 25 C 125 C 9 8 7 6 5 4 3 2 1, 1, 2, 3, 4, 5, 6, 7, 8, 9, 1, V CE [V] Ausgangskennlinienfeld (typisch) I C = f (V CE ), V GE = < see inset > Output characteristic (typical) T vj = 125 C 13 12 11 1 9 2V 15V 12V 1V 8 7 6 5 4 3 2 1, 1, 2, 3, 4, 5, 6, 7, 8, 9, 1, V CE [V] 4 FZ 6 R65 KF1 (final1).xls
13 12 Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = 1V 11 1 25 C 125 C 9 8 7 6 5 4 3 2 1 5 6 7 8 9 1 11 12 13 14 15 V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) 13 12 11 1 25 C 125 C 9 8 I F [A] 7 6 5 4 3 2 1, 1, 2, 3, 4, 5, 6, 7, V F [V] 5 FZ 6 R65 KF1 (final1).xls
Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) R Gon =4,3Ω, R Goff =25Ω, C GE = 68nF, V GE =±15V, V CE = 36V, T vj = 125 C, 16 14 12 Eon Eoff Erec E [mj] 1 8 6 4 2 2 4 6 8 1 12 Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) I C = 6A, V CE = 36V, V GE =±15V, C GE =68nF, T vj = 125 C 14 12 1 Eon Eoff Erec E [mj] 8 6 4 2 4 6 8 1 12 14 16 18 2 22 24 26 28 3 32 34 36 38 4 42 44 46 48 R G [Ω] 6 FZ 6 R65 KF1 (final1).xls
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) R G,off = 25Ω, C GE =68nF, V GE =±15V, T vj = <see inset>, V CC <=44V 12 1 8 6 Tvj=125 C Tvj=25 C 4 2 2 25 3 35 4 45 5 55 6 65 V CE [V] (at auxiliary terminals) Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) P max = 18kW ; T vj = 125 C 12 1 8 I R [A] 6 4 2 1 2 3 4 5 6 V R [V] (at auxiliary terminals) 7 FZ 6 R65 KF1 (final1).xls
Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t),1 Z thjc [K / W],1,1 Zth:Diode Zth:IGBT,1,1,1,1 1 1 1 t [s] i 1 2 3 4 r i [K/kW] : IGBT 4,95 2,75,66 2,64 τ i [s] : IGBT,3,1,3 1, r i [K/kW] : Diode 9,45 5,25 1,26 5,4 τ i [s] : Diode,3,1,3 1, 8 FZ 6 R65 KF1 (final1).xls
Äußere Abmessungen / extenal dimensions Anschlüsse / Terminals 1 Hilfsemitter / auxiliary emitter 2 Gate / gate 3 Hilfskollektor / auxiliary collector 4,6,8, Emitter / emitter 5,7,9 Kollektor / collector 9 FZ 6 R65 KF1 (final1).xls