s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung T vj = 25 C V CES 33 V collector-emitter voltage T vj = -25 C 33 Kollektor-Dauergleichstrom T C = 8 C I C,nom. 4 A DC-collector current T C = 25 C I C 66 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t P = 1 ms, T C = 8 C I CRM 8 A Gesamt-Verlustleistung total power dissipation T C =25 C, Transistor P tot 4,8 kw Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES +/- 2V V Dauergleichstrom DC forward current I F 4 A Periodischer Spitzenstrom repetitive peak forw. current t P = 1 ms I FRM 8 A Grenzlastintegral der Diode I 2 t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode V R = V, t p = 1ms, T vj = 125 C I 2 t 7 k A 2 s T vj = 125 C P RQM 4 kw Isolations-Prüfspannung insulation test voltage RMS, f = 5 Hz, t = 1 min. V ISOL 1,2 kv Teilentladungs-Aussetzspannung partial discharge extinction voltage RMS, f = 5 Hz, Q PD typ. 1pC (acc. To IEC 1287) V ISOL 5,1 kv Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung I C = 4A, V GE = 15V, T vj = 25 C V CE sat - 3,4 4,25 V collector-emitter saturation voltage I C = 4A, V GE = 15V, T vj = 125 C - 4,3 5, V Gate-Schwellenspannung gate threshold voltage I C = 4 ma, V CE = V GE, T vj = 25 C V GE(th) 4,2 5,1 6, V Eingangskapazität input capacitance f = 1MHz, T vj = 25 C, V CE = 25V, V GE = V C ies - 5 - nf Rückwirkungskapazität reverse transfer capacitance f = 1MHz, T vj = 25 C, V CE = 25V, V GE = V C res - 2,7 - nf Gateladung gate charge V GE = -15V... + 15V Q G - 8 - µc Kollektor-Emitter Reststrom collector-emitter cut-off current V CE = 33V, V GE = V, T vj = 25 C I CES - - 5 ma Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES - - 4 na prepared by: Alfons Wiesenthal date of publication :22-1-31 approved by: Christoph Lübke revision: 2. 1 (9)
s Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) I C = 4 A, V CE = 18V turn on delay time (inductive load) V GE = ±15V, R G = 8,2 Ω, C GE = 68nF, T vj = 25 C t d,on -,75 - µs V GE = ±15V, R G = 8,2 Ω, C GE = 68nF, T vj = 125 C -,7 - µs Anstiegszeit (induktive Last) I C = 4 A, V CE = 18V rise time (inductive load) V GE = ±15V, R G = 8,2 Ω, C GE = 68nF, T vj = 25 C t r -,45 - µs V GE = ±15V, R G = 8,2 Ω, C GE = 68nF, T vj = 125 C -,48 - µs Abschaltverzögerungszeit (ind. Last) I C = 4 A, V CE = 18V turn off delay time (inductive load) V GE = ±15V, R G = 4,3 Ω, C GE = 68nF, T vj = 25 C t d,off - 1,55 - µs V GE = ±15V, R G = 4,3 Ω, C GE = 68nF, T vj = 125 C - 1,7 - µs Fallzeit (induktive Last) I C = 4 A, V CE = 18V fall time (inductive load) V GE = ±15V, R G = 4,3 Ω, C GE = 68nF, T vj = 25 C t f -,2 - µs V GE = ±15V, R G = 4,3 Ω, C GE = 68nF, T vj = 125 C -,2 - µs Einschaltverlustenergie pro Puls I C = 4 A, V CC = 18V, V GE = ±15V turn-on energy loss per pulse R G = 3,6 Ω, C GE = 68 nf, T vj = 125 C, L σ = 6nH E on - 96 - mws Abschaltverlustenergie pro Puls I C = 4 A, V CC = 18V, V GE = ±15V turn-off energy loss per pulse R G = 4,3 Ω, C GE = 68 nf, T vj = 125 C, L σ = 6nH E off - 53 - mws Kurzschlußverhalten t P 1µsec, V GE 15V SC Data T Vj 125 C, V CC =2V, V CEmax =V CES -L σce di/dt I SC - 2 - A Modulinduktivität stray inductance module L σce - 25 - nh Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip T = 25 C R CC'+EE' -,37 - mω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung I F = 4 A, V GE = V, T vj = 25 C V F - 2,8 3,5 V forward voltage I F = 4 A, V GE = V, T vj = 125 C - 2,8 3,5 V Rückstromspitze I F = 4 A, - di F /dt = 21 A/µs peak reverse recovery current V R = 18V, V GE = -1V, T vj = 25 C I RM - 48 - A V R = 18V, V GE = -1V, T vj = 125 C - - A Sperrverzögerungsladung I F = 4 A, - di F /dt = 21 A/µs recovered charge V R = 18V, V GE = -1V, T vj = 25 C Q r - 235 - µas V R = 18V, V GE = -1V, T vj = 125 C - 44 - µas Abschaltenergie pro Puls I F = 4 A, - di F /dt = 21 A/µs reverse recovery energy V R = 18V, V GE = -1V, T vj = 25 C E rec - 225 - mws V R = 18V, V GE = -1V, T vj = 125 C - 46 - mws 2 (9)
s Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC R thjc - -,26 K/W thermal resistance, junction to case Diode/Diode, DC - -,51 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λ Paste = 1 W/m*K / λ grease = 1 W/m*K R thck -,16 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj max - - 15 C Betriebstemperatur operation temperature T vj op -4-125 C Lagertemperatur storage temperature T stg -4-125 C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate AlSiC Innere Isolation internal insulation AlN Kriechstrecke creepage distance 56 mm Luftstrecke clearance 26 mm CTI comperative tracking index > 6 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube / screw M6 M 4,25-5,75 Nm Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M8 M 8-1 Nm Gewicht weight G g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9)
s Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V 8 7 6 Tvj = 25 C Tvj = 125 C 4 3 2 1,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, 6,5 7, V CE [V] 8 Ausgangskennlinienfeld (typisch) I C = f (V CE ) Output characteristic (typical) T vj = 125 C 7 6 4 VGE = 8V VGE = 9V VGE = 1V VGE = 12V VGE = 15V VGE = 2V 3 2 1,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, 6,5 7, V CE [V] 4 (9)
s 8 Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = 2V 7 Tvj = 25 C Tvj = 125 C 6 4 3 2 1 5 6 7 8 9 1 11 12 13 V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) 8 7 Tvj = 25 C Tvj = 125 C 6 I F [A] 4 3 2 1,,5 1, 1,5 2, 2,5 3, 3,5 4, V F [V] 5 (9)
s Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) T vj = 125 C, V CE = 18V, V GE = ±15V, R G,on = 3,6 Ω, R G,off = 4,3 Ω, C GE = 68 nf, 3 3 Eon Eoff Erec 2 E [mj] 2 1 1 1 2 3 4 6 7 8 Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) Tvj = 125 C, V CE = 18V, I C = 4 A, C GE = 68 nf, 4 3 3 Eon Eoff Erec 2 E [mj] 2 1 1 5 1 15 2 25 3 35 4 45 R G [Ω] 6 (9)
s Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA) T vj = 125 C, V GE = ±15V, R Goff = 4,3 Ω, C GE = 68 nf 9 8 7 6 4 3 IC,Modul IC,Chip 2 1 1 1 2 2 3 3 V CE [V] Sicherer Arbeitsbereich Diode (SOA) T vj = 125 C safe operation area Diode (SOA) 9 8 7 6 I R [A] 4 3 2 1 1 1 2 2 3 3 V R [V] 7 (9)
s Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t),1 Zth: IGBT Zth: Diode Z thjc [K / W],1,1,1,1,1 1 1 t [s] i 1 2 3 4 r i [K/kW] : IGBT 11,7 6,5 1,56 6,24 τ i [s] : IGBT,3,1,3 1, r i [K/kW] : Diode 22,95 12,75 3,6 12,24 τ i [s] : Diode,3,1,3 1, 8 (9)
s Gehäusemaße / Schaltbild Package outline / Circuit diagram 9 (9)