Hyper Micro SIDELED Hyper-Bright LED LS Y876, LA Y876, LO Y876, LY Y876. Vorläufige Daten / Preliminary Data

Ähnliche Dokumente
Hyper CHIPLED Hyper-Bright LED LS Q976, LO Q976, LY Q976. Vorläufige Daten / Preliminary Data

Hyper CHIPLED Hyper-Bright LED LS R976, LO R976, LY R976

Hyper TOPLED Hyper-Bright LED LS T676, LA T676, LO T676, LY T676

CHIPLED LG N971, LY N971

BLUE LINE TM Hyper TOPLED Hyper-Bright LED LB T676

5 mm (T1 ¾) LED, Diffused LR 5360, LS 5360, LY 5360, LG 5360

TOPLED RG LS T770, LO T770, LY T770, LG T770, LP T770

CHIPLED LH R

TOPLED Super-Bright, Hyper-Red GaAlAs-LED LH T674

Opto Semiconductors. Vorläufige Daten / Preliminary Data

Mini TOPLED LS M670, LO M670, LY M670, LG M670, LP M670

Micro SIDELED White Hyper-Bright LED LW Y87S

TOPLED High-optical Power LED (HOP) LS T675. Vorläufige Daten / Preliminary Data

Hyper CHIPLED Hyper-Bright LED LS R976, LO R976, LY R976

Mini SIDELED LS C870, LO C870, LY C870, LG C870, LP C870

Mini TOPLED LS M670, LO M670, LY M670, LG M670, LP M670

Power TOPLED Hyper-Bright LED LY E675

Micro SIDELED Enhanced optical Power LED (ATON ) LW Y87C. Vorläufige Daten Preliminary Data

TOPLED LS T670, LO T670, LY T670, LG T670, LP T670

Hyper TOPLED White LED LW T676. Vorläufige Daten / Preliminary Data

SIDELED LS A670, LO A670, LY A670, LG A670, LP A670

Hyper CHIPLED Hyper-Bright LED LW Q18S

Power TOPLED High-optical Power LED (HOP) LS E675, LA E675, LY E675

TOPLED RG LS T770, LO T770, LY T770, LG T770, LP T770

Power TOPLED Enhanced optical Power LED (ATON ) LB E67C, LV E67C, LT E67C. Vorläufige Daten / Preliminary Data

3 mm (T1) LED, Diffused LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360

DatasheetDirect.com. Visit to get your free datasheets. This datasheet has been downloaded by

Hyper Mini TOPLED Hyper-Bright LED LB M673, LV M673, LT M673. Vorläufige Daten / Preliminary Data

LC SOT-23 LED, Diffused Low Current LED LS S269, LY S269, LG S269. Nicht für Neuentwicklungen / Not for New Designs

Super SIDELED High-Current LED LG A672, LP A672

SIDELED LS A670, LO A670, LY A670, LG A670, LP A670

Hyper CHIPLED Hyper-Bright LED LB Q993

Opto Semiconductors. White LED

Power TOPLED with Lens Hyper-Bright LED LY E655. Vorläufige Daten / Preliminary Data

Power TOPLED High-optical Power LED (HOP) LS E675, LA E675, LY E675

Power TOPLED Enhanced optical Power LED (HOP2000) LS E67B, LA E67B, LO E67B, LY E67B. Vorläufige Daten / Preliminary Data

SFH Features Especially suitable for applications from 740 nm to 1100 nm 5 mm LED plastic package Integrated NTC thermistor, R 25 =10kΩ

Hyper Mini TOPLED Enhanced optical Power LED (ATON ) LW M67C. Vorläufige Daten / Preliminary Data

Hyper TOPLED Hyper-Bright LED LB T673, LV T673, LT T673

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4203

LC 5 mm (T1 ¾) LED, Diffused Low Current LED LS 5469, LY 5469, LG 5469

Hyper CHIPLED Hyper-Bright LED LW Q183. Vorläufige Daten / Preliminary Data

Hyper 3 mm (T1) LED, Non Diffused Hyper-Bright LED LB 3333, LV 3333, LT LV 3333 abgekündigt nach PD_078_02 LV 3333 obsolete acc.

BLUE LINE TM Hyper TOPLED Hyper-Bright LED LB T676

SmartLED Hyper-Bright LED LS L896, LA L896, LO L896, LY L896

Hyper TOPLED Hyper-Bright Low Current LED LS T67K, LO T67K, LY T67K

Micro SIDELED Enhanced optical Power LED (NOTA ) LW Y87G. Vorläufige Daten / Preliminary Data

SmartLED TM Enhanced optical power LED (ATON ) LW L88C

Infrarot-LED Infrared-LED Lead (Pb) Free Product - RoHS Compliant SFH 4281

Strahlstärkegruppierung 1) (I F = 100 ma, t p = 20 ms) Radiant Intensity Grouping 1) I e (mw/sr)

3 mm (T1) MULTILED, Non Diffused LSG 3331

650nm Resonant Cavity LED-Chip 650nm Resonant Cavity LED Die F372A. Vorläufige Daten / Preliminary Data

Hyper TOPLED Enhanced optical Power LED (ATON ) LW T67C. Vorläufige Daten / Preliminary Data

SFH Not for new design

TOPLED RG LS T770, LO T770, LY T770, LG T770, LP T770

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4556

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter SFH 4209

Infrarot-LED Infrared-LED Lead (Pb) Free Product - RoHS Compliant SFH 4281

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4511

IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4546

Golden Dragon 1 Watt LED LA W57B, LY W57B

Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead (Pb) Free Product - RoHS Compliant BPW 21

Schmitt-Trigger IC im Smart DIL Gehäuse Schmitt-Trigger IC in Smart DIL Package Lead (Pb) Free Product - RoHS Compliant SFH 5440 SFH 5441

GaAlAs-IR-Lumineszenzdiode (880 nm) GaAlAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 486

GaAs-IR-Lumineszenzdiode (Mini Sidelooker) GaAs Infrared Emitter (Mini Sidelooker) Lead (Pb) Free Product - RoHS Compliant SFH 4110

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4550

Schmitt-Trigger IC im TO-18 Gehäuse mit Glaslinse Schmitt-Trigger IC in TO-18 Package with Glass Lens Lead (Pb) Free Product - RoHS Compliant

IR-Lumineszenzdiode (880 nm) im TO-46-Gehäuse Infrared Emitter (880 nm) in TO-46 Package Lead (Pb) Free Product - RoHS Compliant SFH 4881 SFH 4883

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4350

GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 4860

GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays Lead (Pb) Free Product - RoHS Compliant LD 260 LD 262 LD 269

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4501, SFH 4502, SFH 4503

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4250

Power TOPLED with Lens Enhanced Optical Power LED (ATON ) LB E63C, LV E63C, LT E63C. Vorläufige Daten / Preliminary Data

SOCKET AND RING Lead (Pb) Free Product - RoHS Compliant. Sleeves and Ring for 3 mm and 5 mm LED. full production

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4512

IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4243

GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead (Pb) Free Product - RoHS Compliant IRL 81 A

Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4301

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 405

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4557

Silizium-Fotodiode Silicon Photodiode BPW 33

Power TOPLED with Lens Enhanced optical Power LED (HOP2000) LS E63B, LA E63B, LO E63B, LY E63B. Vorläufige Daten / Preliminary Data

GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead (Pb) Free Product - RoHS Compliant SFH Vorläufige Daten / Preliminary Data

Features Very small package: (LxWxH) 3.2 mm x 1.6 mm x 1.1 mm High optical total power

GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package Lead (Pb) Free Product - RoHS Compliant SFH 4211

GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4550

GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead (Pb) Free Product - RoHS Compliant SFH 415

5 mm (T1 3 / 4 ) MULTILED, Diffused LU 5351

Hyper 3 mm (T1) LED, Non Diffused Hyper-Bright LED LW Vorläufige Daten / Preliminary Data

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead (Pb) Free Product - RoHS Compliant

UV-Lumineszensdiode UV Light Emitting Diode Lead (Pb) Free Product - RoHS Compliant SFH 4840

GPL Maβe in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified.

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255

Multi TOPLED LSG T670, LSP T670, LSY T670 LOP T670, LYG T670, LYP T670

Infrarot-LED mit hoher Ausgangsleistung High Power Infrared LED Lead (Pb) Free Product - RoHS Compliant SFH 4258 SFH 4259

GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416

Transkript:

Hyper Micro SIDELED Hyper-Bright LED LS Y876, L Y876, LO Y876, LY Y876 Vorläufige Daten / Preliminary Data Besondere Merkmale Gehäusetyp: weißes SM-Gehäuse Besonderheit des Bauteils: kleine Bauform mit extrem breiter bstrahlcharakteristik; ideal für Einkopplungen in Lichtleiter Wellenlänge: 633 nm (super-rot), 6 nm (amber), 66 nm (orange), 87 nm (gelb) bstrahlwinkel: Lambertscher Strahler (2 ) echnologie: InGalP optischer Wirkungsgrad: 9 lm/w (gelb, orange, amber), lm/w (super-rot) Gruppierungsparameter: Lichtstärke, Wellenlänge Verarbeitungsmethode: für alle SM-Bestücktechniken geeignet Lötmethode: IR Reflow Löten und Wellenlöten (W) Vorbehandlung: nach JEDEC Level 2 Gurtung: 8 mm Gurt mit 3/Rolle, ø8 mm oder /Rolle, ø33 mm nwendungen optimale Einkopplung in Lichtleiter Hinterleuchtung (LCD, Mobiltelefone, asten, llgemeinbeleuchtung, Werbebeleuchtung) Signal- und Symbolleuchten utomobilbereich (z. B. Instrumentenbeleuchtung) Features package: white SM package feature of the device: small package with extremely wide viewing angle; ideal for coupling in light guides wavelength: 633 nm (super-red), 6 nm (amber), 66 nm (orange), 87 nm (yellow) viewing angle: Lambertian Emitter (2 ) technology: InGalP optical efficiency: 9 lm/w (yellow, orange, amber), lm/w (super-red) grouping parameter: luminous intensity, wavelength assembly methods: suitable for all SM assembly methods soldering methods: IR reflow soldering and W soldering preconditioning: acc. to JEDEC Level 2 taping: 8 mm tape with 3/reel, ø8 mm or /reel, ø33 mm pplications optimized coupling into light guides backlighting (LCD, cellular phones, keys, general lightning, illuminated advertising) signal and symbol luminaire automotive (e. g. car radio backlighting) 22--8

yp ype Emissionsfarbe Color of Emission Farbe der Lichtaustrittsfläche Color of the Light Emitting rea Lichtstärke Luminous Intensity = 2 m I V (mcd) Lichtstrom Luminous Flux = 2 m Φ V (mlm) Bestellnummer Ordering Code L Y876-QR- L Y876-RS2- amber colorless clear 7... 4 2... 28 3 (typ.) 6 (typ.) Q638 Q638 LS Y876-PQ- LS Y876-QR2- super-red colorless clear 4... 9 7... 8 2 (typ.) 37 (typ.) Q6388 Q648 LO Y876-Q2R2-24 LO Y876-R2-24 orange colorless clear 9... 8 4... 3 4 (typ.) 74 (typ.) Q643 Q6483 LY Y876-QR-26 LY Y876-RS2-26 yellow colorless clear 7... 4 2... 28 3 (typ.) 6 (typ.) Q64 Q648 nm.: - gesamter Farbbereich (siehe Seite 4) -24 gesamter Farbbereich, Lieferung in Einzelgruppen (siehe Seite ) -26 gesamter Farbbereich, Lieferung in Einzelgruppen (siehe Seite ) Die Standardlieferform von Serientypen beinhaltet eine untere bzw. eine obere Familiengruppe, die aus nur 3 bzw. 4 Halbgruppen besteht. Einzelne Halbgruppen sind nicht erhältlich. In einer Verpackungseinheit / Gurt ist immer nur eine Halbgruppe enthalten. Note: - otal color tolerance range (please see page 4) -24 otal color tolerance range, delivery in single groups (please see page ) -26 otal color tolerance range, delivery in single groups (please see page ) -he standard shipping format for serial types includes a lower or upper family group of 3 or 4 individual groups. Individual half groups are not available. No packing unit / tape ever contains more than one luminous intensity half group.. 22--8 2

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlassstrom Forward current Stoßstrom Surge current t µs, D =. Sperrspannung ) Reverse voltage = µ Leistungsaufnahme Power consumption 2 C Wärmewiderstand hermal resistance Sperrschicht/Umgebung Junction/ambient Sperrschicht/Lötpad Junction/solder point Montage auf PC-Board FR 4 (Padgröße mm 2 ) mounted on PC board FR 4 (pad size mm 2 ) Symbol Symbol Werte Values LS, LO, L LY op 4 + C stg 4 + C j + 2 C 3 m M 2 m V R 2 V Einheit Unit P tot 8 mw R th J R th JS 63 3 K/W K/W ) für kurzzeitigen Betrieb geeignet / suitable for short term application 22--8 3

Kennwerte ( = 2 C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values LS L LO LY Einheit Unit Wellenlänge des emittierten Lichtes (typ.) λ peak 64 622 6 9 nm Wavelength at peak emission = 2 m Dominantwellenlänge ) (typ.) λ dom 633 6 66 87 nm Dominant wavelength ) = 2 m ± 6 ± 6 6/+3 7/+8 Spektrale Bandbreite bei % I rel max (typ.) λ 6 6 6 nm Spectral bandwidth at % I rel max = 2 m bstrahlwinkel bei % I V (Vollwinkel) (typ.) 2ϕ 2 2 2 2 Grad Viewing angle at % I V deg. Durchlassspannung 2) (typ.) V F 2. 2. 2. 2. V Forward voltage 2) (max.) V F 2.4 2.4 2.4 2.4 V = 2 m Sperrstrom (typ.) I R.... µ Reverse current (max.) I R µ V R = 2 V emperaturkoeffizient von λ peak (typ.) C λpeak.4.3.3.3 nm/k emperature coefficient of λ peak = 2 m; C C emperaturkoeffizient von λ dom emperature coefficient of λ dom = 2 m; C C emperaturkoeffizient von V F emperature coefficient of V F = 2 m; C C Optischer Wirkungsgrad Optical efficiency = 2 m (typ.) (typ.) (typ.) C λdom..6.7. nm/k C V 2..8.7 2. mv/k η opt 9 9 9 lm/w ) 2) Wellenlängen werden mit einer Stromeinprägedauer von 2 ms und einer Genauigkeit von ± nm ermittelt. Wavelengths are tested at a current pulse duration of 2 ms and a tolerance of ± nm. Spannungswerte werden mit einer Stromeinprägedauer von ms und einer Genauigkeit von ±, V ermittelt. Voltages are tested at a current pulse duration of ms and a tolerance of ±. V. 22--8 4

) Wellenlängengruppen / Wavelength groups Gruppe Group yellow orange Einheit Unit min. max. min. max. 2 8 83 6 63 nm 3 83 86 63 66 nm 4 86 89 66 69 nm 89 92 nm 6 92 9 nm Helligkeitswerte werden mit einer Stromeinprägedauer von 2 ms und einer Genauigkeit von ± % ermittelt. Luminous intensity is tested at a current pulse duration of 2 ms and a tolerance of ± %. Helligkeits-Gruppierungsschema Luminous Intensity Groups Lichtgruppe Luminous Intensity Group P P2 Q Q2 R R2 S S2 Lichtstärke Luminous Intensity I V (mcd) 4... 6 6... 7 7... 9 9... 2 2... 4 4... 8 8... 224 224... 28 28... 3 Lichtstrom Luminous Flux Φ V (mlm) (typ.) 9 (typ.) 24 (typ.) 3 (typ.) 38 (typ.) 48 (typ.) 6 (typ.) 72 (typ.) 9 (typ.) Helligkeitswerte werden mit einer Stromeinprägedauer von 2 ms und einer Genauigkeit von ± % ermittelt. Luminous intensity is tested at a current pulse duration of 2 ms and a tolerance of ± %. Gruppenbezeichnung auf Etikett Group Name on Label Beispiel: S-3 Example: S-3 Lichtgruppe Luminous Intensity Group Halbgruppe Half Group S 3 Wellenlänge Wavelength 22--8

Relative spektrale Emission I rel = f (λ), = 2 C, = 2 m Relative Spectral Emission V(λ) = spektrale ugenempfindlichkeit Standard eye response curve OHL23 I rel % 8 V λ 6 4 yellow orange amber super-red 2 4 4 6 6 nm 7 λ bstrahlcharakteristik I rel = f (ϕ) Radiation Characteristic 4 3 2 OHL66 ϕ..8 6 7 8 9.6.4.2..8.6.4 2 4 6 8 2 22--8 6

Durchlassstrom = f (V F ) Forward Current = 2 C 2 m OHL232 Relative Lichtstärke I V /I V(2 m) = f ( ) Relative Luminous Intensity = 2 C I V I V (2 m) OHL233 - -2 super-red yellow orange/amber -.4.8 2.2 2.6 3 V 3.4 Maximal zulässiger Durchlassstrom = f () Max. Permissible Forward Current 3 m 3 2 2 V F OHL9 S -3 - m 2 I Relative Lichtstärke I V /I V(2 C) = f ( ) Relative Luminous Intensity = 2 m I V I V (2 C) 2..6.2 orange yellow amber super-red F OHL238 S temp. solder point temp. ambient 2 4 6 8 C.8.4 orange yellow amber super-red -2 2 4 6 C 22--8 7

Zulässige Impulsbelastbarkeit = f (t p ) Permissible Pulse Handling Capability Duty cycle D = parameter, = 2 C LS, L, LO.6. D = OHL687 Zulässige Impulsbelastbarkeit = f (t p ) Permissible Pulse Handling Capability Duty cycle D = parameter, = 2 C LY.2.2 D = OHL689.4.3.2 D =...2...2... D =...2...2... - tp -4-3 -2 - s Zulässige Impulsbelastbarkeit = f (t p ) Permissible Pulse Handling Capability Duty cycle D = parameter, = 8 C LS, L, LO.3.2 D = OHL688 2 - tp -4-3 -2 - s Zulässige Impulsbelastbarkeit = f (t p ) Permissible Pulse Handling Capability Duty cycle D = parameter, = 8 C LY.2. D = OHL69 2.2.. D =...2...2..8.6.4 D =...2...2...2 - tp -4-3 -2 - s 2 - tp -4-3 -2 - s 2 22--8 8

Maßzeichnung Package Outlines.2 (.).2 (.8) (.6 (.24)).... (....4) (.4 (.6)) 3. (.22) 2.9 (.4). (.2).3 (.2) ( ) Light emitting area typ..7.7 Cathode.2 (.47). (.39).7 (.28). (.2) 2.3 (.9) 2. (.83).3 (.). (.43) GPLY68 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Gewicht / pprox. weight: 6 mg 22--8 9

Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil (nach IPC 9) IR Reflow Soldering Profile (acc. to IPC 9) 3 C OHLY97 2 24-24 C -4 s 2 2 to 8 s 83 C Ramp-down rate up to 6 K/s Ramp-up rate up to 6 K/s Defined for Preconditioning: 2-3 K/s Defined for Preconditioning: up to 6 K/s 2 s 2 t 22--8

Wellenlöten (W) (nach CECC 82) W Soldering (acc. to CECC 82) 3 C 2 2 23 C... 26 C. Welle. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY98 ca 2 K/s K/s 2 K/s C... 3 C 2 K/s Zwangskühlung forced cooling 2 s 2 t 22--8

Empfohlenes Lötpaddesign Recommended Solder Pad IR Reflow Löten IR Reflow Soldering Bauteil positioniert Component location on pad C C.8 (.3) 2.2 (.87).7 (.28) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist OHPY3 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Gehäuse hält W-Löthitze aus / Package able to withstand W-soldering heat Gurtung / Polarität und Lage Method of aping / Polarity and Orientation Verpackungseinheit 3/Rolle, ø8 mm oder /Rolle, ø33 mm Packing unit 3/reel, ø8 mm or /reel, ø33 mm. (.9) 2 (.79) 4 (.7) 2.4 (.94) 3. (.38).9 (.3).7 (.69) 8. (.39).2 (.49) 3.3 (.3) C.4 (.).3 (.2) max. OHY Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 22--8 2

Revision History: 22--8 Date of change Previous Version: 22--9 Page Subjects (major changes since last revision) wavelength groups 2 wavelength grouping for yellow and orange 3 pad size from 6 mm 2 to mm 2 3 / 8 Surge current 3 annotations 22-7-2 4 value (C λdom from. to. nm/k) 22-7-2 3, 4 value (reverse voltage from 3 V to 2 V) 22-9-8 2, new Q-numbers and new luminous intensity groups (all colours) 22--9 Published by OSRM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg ll Rights Reserved. ttention please! he information describes the type of component and shall not be considered as assured characteristics. ll typical data and graphs are basing on representative samples, but don t represent the production range. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. erms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components may only be used in life-support devices or systems 2 with the express written approval of OSRM OS. critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 22--8 3