GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4511

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4511 Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad 5mm Kunststoffgehäuse Peakwellenlänge 95 nm

1 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4511 Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad 5mm Kunststoffgehäuse Peakwellenlänge 95 nm Sehr enger Abstrahlwinkel (± 4 ) Hohe Strahlstärke Hohe Zuverlässigkeit Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb Sensorik Diskrete Lichtschranken Features Very highly efficient GaAs-LED 5mm plastic package Peak Wavelength 95 nm Very narrow radiation Angle (± 4 Deg.) High radiant intensity High reliability Applications IR remote control of hi-fi and TV-sets, video tape recorders, dimmers Remote control for steady and varying intensity Sensor technology Discrete interrupters Typ Type Bestellnummer Ordering Code SFH 4511 Q6272Q5557 > 63 (typ. 15) Strahlstärkegruppierung 1) (I F = ma, t p = 2 ms) Radiant Intensity Grouping 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel Ω =.1 sr / measured at a solid angle of Ω =.1 sr

2 Grenzwerte (T A = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, t p = µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Wert Value T op ; T stg 4 + C V R 5 V I F ma I FSM 3 A Einheit Unit P tot 165 mw R thja 45 K/W Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission I F = ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Schaltzeiten, I e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Ω Switching times, Ι e from % to 9% and from 9% to %, I F = ma, R L = 5 Ω Wert Value λ peak 95 nm λ 55 nm Einheit Unit ϕ ± 4 Grad deg. A.9 mm 2 L B L W.3.3 mm² t r, t f.5 µs

3 Kennwerte (T A = 25 C) Characteristics (cont d) Bezeichnung Parameter Kapazität, Capacitance V R = V, f = 1 MHz Durchlassspannung Forward voltage I F = ma, t p = 2 ms I F = 1 A, t p = µs Sperrstrom Reverse current V R = 5 V Gesamtstrahlungsfluss Total radiant flux I F = ma, t p = 2 ms Strahlstärke Radiant intensity I F = 1 A, t p = µs Temperaturkoeffizient von I e bzw. Φ e, I F = ma Temperature coefficient of I e or Φ e, I F = ma Temperaturkoeffizient von V F, I F = ma Temperature coefficient of V F, I F = ma Temperaturkoeffizient von λ, I F = ma Temperature coefficient of λ, I F = ma Wert Value C o 25 pf V F 1.3 ( 1.5) V F 2.3 ( 2.8) V V I R.1 ( 1) µa Einheit Unit Φ e 22 mw I e typ. 12 mw/sr TC I.5 %/K TC V 2 mv/k TC λ +.3 nm/k

4 Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =.1 sr Grouping of Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Bezeichnung Parameter Strahlstärke Radiant intensity I F = ma, t p = 2 ms Strahlstärke Radiant intensity I F = 1 A, t p = µs Wert Value I e min. 63 I e typ. 15 Einheit Unit mw/sr mw/sr I e typ. 12 mw/sr

5 Relative Spectral Emission I rel = f (λ) Ι rel % 8 OHRD1938 Radiant Intensity Single pulse, t p = 2 µs Ι e Ι e ma 2 A 1 Ι e Ι e ma = f (I F ) OHR1551 Max. Permissible Forward Current I F = f (T A ) Ι F 12 ma OHR R thja = 45 K/W nm 6 λ Forward Current I F = f (V F ), single pulse, t p = 2 µs 1 OHR A Ι F Radiation Characteristics, Ι rel = f (ϕ) C 12 T A OHF1142 Ι F A 5 ϕ V Permissible Pulse Handling Capability I F = f (τ), T A = 25 C duty cycle D = parameter V F 4 OHR86 Ι ma F 5 t p D = T D =.5 t p T Ι F DC s t p

6 Maßzeichnung Package Outlines 9. (.354) 8.2 (.323) 7.8 (.37) 5.9 (.232).6 (.24).4 (.16) 2.54 (.) spacing Area not flat.8 (.31).4 (.16) 7.5 (.295) ø5.1 (.21) ø4.8 (.189) 5.5 (.217) 1.8 (.71) 1.2 (.47) Cathode 29 (1.142) 27 (1.63) Chip position 5.7 (.224) 5.1 (.21).6 (.24).4 (.16) GEXY651 Maße in mm (inch) / Dimensions in mm (inch). Package 5 mm radial (T 1 3 /4) Colour black

7 Empfohlenes Lötpaddesign Recommended Solder Pad Wellenlöten (TTW) TTW Soldering 4.8 (.189) 4 (.157) OHLPY985 Maße in mm (inch) / Dimensions in mm (inch)

Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C 25 2 235 C... 26 C 1. Welle 1. wave s 2. Welle 2.

8 Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C 1. Welle 1. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY ca 2 K/s 5 K/s 2 K/s C C 5 2 K/s Zwangskühlung forced cooling s 25 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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