Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW34, BPW34S, BPW34S (R18R)

Transkript

1 Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW34, BPW34S, BPW34S (R18R) BPW 34 BPW 34 S Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 4 nm bis 1 nm Kurze Schaltzeit (typ. 2 ns) DIL-Plastikbauform mit hoher Packungsdichte BPW 34 S/(R18R): geeignet für Vapor-Phase Löten und IR-Reflow Löten (JEDEC level 4) Anwendungen Lichtschranken für Gleich- und Wechsellichtbetrieb IR-Fernsteuerungen Industrieelektronik Messen/Steuern/Regeln Features Especially suitable for applications from 4 nm to 1 nm Short switching time (typ. 2 ns) DIL plastic package with high packing density BPW 34 S/(R18R): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Applications Photointerrupters IR remote controls Industrial electronics For control and drive circuits Typ Type BPW 34 BPW 34 S Bestellnummer Ordering Code Q6272-P73 Q6272-P162 Q6272-P

2 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, T A = 25 C Total power dissipation Wert Value BPW 34 S BPW 34 T op ; T stg C V R 32 V Einheit Unit P tot 15 mw Kennwerte (T A = 25 C, Normlicht A, T = 2856 K) Characteristics (T A = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Fotoempfindlichkeit, V R = 5 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = % von S max Spectral range of sensitivity S = % of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, V R = V Dark current Spektrale Fotoempfindlichkeit, λ = 85 nm Spectral sensitivity Quantenausbeute, λ = 85 nm Quantum yield Wert Value Einheit Unit S 8 ( 5) na/ix λ S max nm λ 4 1 nm A 7. mm 2 L B L W mm mm ϕ ± 6 Grad deg. I R 2 ( 3) na S λ.62 A/W η.9 Electrons Photon

3 Kennwerte (T A = 25 C, Normlicht A, T = 2856 K) Characteristics (T A = 25 C, standard light A, T = 2856 K) (cont d) Bezeichnung Parameter Leerlaufspannung, E v = Ix Open-circuit voltage Kurzschlußstrom, E v = Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 5 Ω; V R = 5 V; λ = 85 nm; I p = 8 µa V O 365 ( 3) mv I SC 8 µa t r, t f 2 ns Durchlaßspannung, I F = ma, E = V F 1.3 V Forward voltage Kapazität, V R = V, f = 1 MHz, E = C 72 pf Capacitance Temperaturkoeffizient von V O TC V 2.6 mv/k Temperature coefficient of V O Temperaturkoeffizient von I SC Temperature coefficient of I SC TC I.18 %/K Rauschäquivalente Strahlungsleistung NEP W Noise equivalent power Hz V R = V, λ = 85 nm Nachweisgrenze, V R = V, λ = 85 nm Detection limit Wert Value D* Einheit Unit cm Hz W

4 Relative Spectral Sensitivity S rel = f (λ) S rel % OHF78 Photocurrent I P = f (E v ), V R = 5 V Open-Circuit Voltage V O = f (E v ) Ι P OHF µa mv V O Total Power Dissipation P tot = f (T A ) 16 mw P tot 14 OHF V O 4 1 Ι P Dark Current I R = f (V R ), E = 4 Ι R pa nm 1 λ OHF lx 4 E V Capacitance C = f (V R ), f = 1 MHz, E = C pf OHF81 Dark Current I R = f (T A ), V R = V, E = Ι R 3 na C TA OHF V 2 V R Directional Characteristics S rel = f (ϕ) V V R C TA ϕ 1. OHF

5 Maßzeichnung Package Outlines BPW (.213) Cathode marking 4.9 (.193) 4. (.157) 4.5 (.177) 3.7 (.146) 4.3 (.169).6 (.24).4 (.16) 1.2 (.47).7 (.28).8 (.31).6 (.24) Chip position.6 (.24).4 (.16) 2.2 (.87) 1.9 (.75).6 (.24).4 (.16).5 (.2).3 (.12) 1.8 (.71) 1.4 (.55).8 (.31).6 (.24).6 (.24).4 (.16).35 (.14).2 (.8) (.2) spacing Photosensitive area 2.65 (.4) x 2.65 (.4) 3.5 (.138) 3. (.118) GEOY6643 BPW 34 S 1.2 (.47) 1.1 (.43)...1 (...4).3 (.12) Chip position 1.1 (.43).9 (.35) 4.5 (.177) 4.3 (.169).9 (.35).7 (.28) 1.7 (.67) 1.5 (.59) 4. (.157) 3.7 (.146) 6.7 (.264) 6.2 (.244) (.8).1 (.4) 1.8 (.71) ±.2 (.8) Photosensitive area Cathode lead 2.65 (.4) x 2.65 (.4) GEOY6863 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch)

6 1.2 (.47) 1.1 (.43)...1 (...4).3 (.12) 6.7 (.264) 6.2 (.244) 4.5 (.177) 4.3 (.169) 1.8 (.71) ±.2 (.8).9 (.35).7 (.28) 1.7 (.67) 1.5 (.59) 4. (.157) 3.7 (.146) Chip position 1.1 (.43).9 (.35) (.8).1 (.4) Photosensitive area Cathode lead 2.65 (.4) x 2.65 (.4) GEOY6916 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered