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2 6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array Maße in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified. feof6529 feo06529 Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (KOM 2100 B) und bei 880 nm () Kurze Schaltzeit (typ. 13 ns) Kathode = Chipunterseite Geeignet für Diodenbetrieb (mit Vorspannung) und Elementbetrieb SMT-fähig Anwendungen Universell, z.b. Drehwinkelgeber Features Especially suitable for applications from 400 nm to 1100 nm () and of 880 nm () Short switching time (typ. 13 ns) Cathode = back contact Available as photodiode with reverse voltage or photovoltaic cell Suitable for SMT Applications General-purpose, e.g. encoders Typ Type Bestellnummer Ordering Code Gehäuse Package Q62702-K35 Platine mit SMT-Flanken, Abdeckrahmen mit Q62702-K34 klarem bzw. schwarzem Epoxyverguß pcb with SMT flanks, cover frame sealed with transparent or black epoxy Semiconductor Group

3 Grenzwerte Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, T A = 25 C Total power dissipation T A ; T stg C V R 20 V P tot 150 mw Kennwerte (T A = 25 C, λ = 950 nm) für jede Einzeldiode Characteristics (T A = 25 C, λ = 950 nm) per single diode Fotoempfindlichkeit Spectral sensitivity V R = 5 V, E e = 0.5 mw/cm 2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von S max Spectral range of sensitivity S = 10% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfinlichen Fläche Dimensions of radiant sensitive area Abstand Chipoberfläche zu Verguβoberfläche Distance chip front to case seal Halbwinkel Half angle Dunkelstrom, V R = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity S 9 ( 7) 8.5 ( 6.6) µa λ S max nm λ nm A mm 2 L B mm x mm L W H mm ϕ ± 60 ± 60 Grad deg. I R 1 ( 10) 1 ( 10) na S λ A/W Semiconductor Group 470

4 Kennwerte (T A = 25 C, λ = 950 nm) für jede Einzeldiode Characteristics (T A = 25 C, λ = 950 nm) per single diode Quantenausbeute Quantum yield Maximale Abweichung der Fotoempfindlichkeit vom Mittelwert Max. deviation of the system spectral sensitivity from the average Kurzschlußstrom, E e = 0.5 mw/cm 2 Short-circuit current Leerlaufspannung, E e = 0.5 mw/cm 2 Open-circuit voltage Anstiegszeit/Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 50 Ω, V R = 10 V; λ = 850 nm; I P = 800 µa Durchlaßspannung, I F = 100 ma; E = 0 Forward voltage Kapazität Capacitance V R = 0 V; f = 1 MHz; E = 0 η Electrons Photon S ± 10 ± 10 % I SC µa V O 320 ( 250) 320 ( 250) mv t r, t f ns V F V C pf Temperaturkoeffizient von V O TC V mv/k Temperature coefficient of V O Temperaturkoeffizient von I P Temperature coefficient of I P TC I %/K Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V Nachweisgrenze, V R = 10 V Detection limit NEP W Hz D* cm Hz W Semiconductor Group 471

5 Relative spectral sensitivity, S rel = f (λ) Relative spectral sensitivity, S rel = f (λ) Photocurrent, I P = f (E e ); V R = 5 V, Open-circuit voltage V O = f (E e ) Total power dissipation P tot = f (T A ) Dark current I R = f (V R ), E = 0 Capacitance C = f (V R ), f = 1 MHz, E = 0 Directional characteristics S rel = f (ϕ) Dark current I R = f (T A ), V R = 10 V, E = 0 Semiconductor Group 472