NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 43-5

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1 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 43 Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm Hohe Linearität Hermetisch dichte Metallbauform (TO-18) mit Basisanschluß, geeignet bis 125 C Gruppiert lieferbar Anwendungen Lichtschranken für Gleich- und Wechsellichtbetrieb Industrieelektronik Messen/Steuern/Regeln Features Especially suitable for applications from 450 nm to 1100 nm High linearity Hermetically sealed metal package (TO-18) with base connection suitable up to 125 C Available in groups Applications Photointerrupters Industrial electronics For control and drive circuits Typ Type BPX 43 BPX 43-2/3 BPX 43-3 BPX 43-3/4 BPX 43-4 BPX 43-4/5 BPX 43-5 Bestellnummer Ordering Code Q62702-P16 Q62702-P3580 Q62702-P16-S3 Q62702-P3581 Q62702-P16-S4 Q62702-P3582 Q P16-S

2 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle 2 mm vom Gehäuse, Lötzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Löttemperatur bei Kolbenlötung Lötstelle 2 mm vom Gehäuse, Lötzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, T A = 25 C Total power dissipation Wärmewiderstand Thermal resistance Wert Value T op ; T stg C T S 260 C T S 300 C V CE 50 V I C 50 ma I CS 200 ma V EB 7 V Einheit Unit P tot 220 mw R thja 450 K/W

3 Kennwerte (T A = 25 C, λ = 950 nm) Characteristics Bezeichnung Parameter Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von S max Spectral range of sensitivity S = 10% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area λ S max 880 nm λ nm A mm 2 Abmessung der Chipfläche Dimensions of chip area L B L W 1 1 mm mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle H mm ϕ ± 15 Grad deg. Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode E e = 0.5 mw/cm 2, V CB = 5 V E v = 1000 Ix, Normlicht/standard light A, V CB = 5 V I PCB 11 I PCB 35 µa µa Kapazität Capacitance V CE = 0 V, f = 1 MHz, E = 0 V CB = 0 V, f = 1 MHz, E = 0 V EB = 0 V, f = 1 MHz, E = 0 C CE C CB C EB pf pf pf Dunkelstrom Dark current V CE = 25 V, E = 0 I CEO 20 ( 300) na

4 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 950 nm Photocurrent E e = 0.5 mw/cm 2, V CE = 5 V E v = 1000 Ix, Normlicht/standard light A, V CE = 5 V Anstiegszeit/Abfallzeit Rise and fall time I C = 1 ma, V CC = 5 V, R L = 1 kω Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = I PCEmin 1) 0.3 E e = 0.5 mw/cm 2 Stromverstärkung Current gain E e = 0.5 mw/cm 2, V CE = 5 V Wert Value I PCE I PCE Einheit Unit ma ma t r, t f ms V CEsat mv I PCE I PCB 1) I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) I PCEmin is the min. photocurrent of the specified group

5 Relative Spectral Sensitivity S rel = f (λ) Photocurrent I PCE = f (E e ), V CE = 5 V Total Power Dissipation P tot = f (T A ) Output Characteristics I C = f (V CE ), I B = Parameter Output Characteristics I C = f (V CE ), I B = Parameter Dark Current I CEO = f (V CE ), E = 0 Photocurrent I PCE /I PCE25 o = f (T A ), V CE = 5 V Dark Current I CEO /I CEO25o = f (T A ), V CE = 25 V, E = 0 Collector-Emitter Capacitance C CE = f (V CE ), f = 1 MHz, E =

6 Collector-Base Capacitance C CB = f (V CB ), f = 1 MHz, E = 0 Emitter-Base Capacitance C EB = f (V EB ), f = 1 MHz, E = 0 Directional Characteristics S rel = f (ϕ)

7 Maßzeichnung Package Outlines ø0.45 (0.018) Chip position 14.5 (0.571) 12.5 (0.492) (2.7 (0.106)) ø4.8 (0.189) ø4.6 (0.181) 5.1 (0.201) 4.8 (0.189) 6.2 (0.244) 5.4 (0.213) Radiant sensitive area 1.1 (0.043) 0.9 (0.035) 1.1 (0.043) 0.9 (0.035) E C B 2.54 (0.100) spacing ø5.6 (0.220) ø5.3 (0.209) GMOY6019 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered