SFH Applications Data transmission Lock bar Infrared interface. Anwendungen Datenübertragung Wegfahrsperre Infrarotschnittstelle

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GaAlAs-IR-Lumineszenzdiode (88 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (88 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 722 Wesentliche Merkmale SMT-Gehäuse mit

1 GaAlAs-IR-Lumineszenzdiode (88 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (88 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 722 Wesentliche Merkmale SMT-Gehäuse mit IR-Sender (88 nm) und Si-Fototransistor Geeignet für SMT-Bestückung Gegurtet lieferbar Sender und Empfänger getrennt ansteuerbar Geeignet für IR-Reflow Löten Anwendungen Datenübertragung Wegfahrsperre Infrarotschnittstelle Features SMT package with IR emitter (88 nm) and Si-phototransistor Suitable for SMT assembly Available on tape and reel Emitter und detector can be controlled separately Suitable for IR reflow soldering Applications Data transmission Lock bar Infrared interface Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 722 Q65A274 SMT Multi TOPLED

2 Grenzwerte Maximum Ratings Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlassstrom (LED) Forward current (LED) Kollektorstrom (Transistor) Collector current (Transistor) Stoßstrom Surge current t µs, D =.5 Sperrspannung (LED) Reverse voltage (LED) Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) Verlustleistung Total power dissipation Wärmewiderstand Sperrschicht / Umgebung Thermal resistance junction / ambient Montage auf PC-Board ) (Padgröße 6 mm 2 ) mounting on pcb ) (pad size 6 mm 2 ) Sperrschicht / Lötstelle junction / soldering joint Wert Value IRED Transistor T op C T stg C T j + + C I F ma I C 5 ma I FM ma V R 5 V V CE 35 V P tot 8 65 R th JA R th JS K/W K/W ) PC-board: G3/FR4 Hinweis / Notes Die angegebenen Grenzdaten gelten für einen Chip. The stated maximum ratings refer to one chip

3 Kennwerte IRED (T A = 25 C) Characteristics IRED Wellenlänge der Strahlung Wavelength of radiation I F = ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max, I F = ma Spectral bandwidth at 5% of I max, I F = ma Abstrahlwinkel Viewing angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of active chip area Schaltzeiten, I e von % auf 9% und von 9% auf % Switching times, I e from % to 9 % and from 9% to % I F = ma, R L = 5 Ω Kapazität Capacitance V R = V, f = MHz Durchlassspannung Forward voltage I F = ma, t p = 2 ms I F = A, t p = µs Sperrstrom Reverse current V R = 5 V Gesamtstrahlungsfluss Total radiant flux I F = ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e Temperature coefficient of I e bzw. Φ e I F = ma, I F = ma Wert Value λ peak 88 nm λ 8 nm ϕ ± 6 Grad deg. A.9 mm 2 L B L W.3.3 mm t r, t f.5 µs C o 5 pf V F.5 (.8) V F 3. ( 3.8) V V I R. ( ) µa Φ e 23 TC I.5 %/K

4 Kennwerte IRED (T A = 25 C) Characteristics IRED (cont d) Wert Value Temperaturkoeffizient von V F Temperature coefficient of V F I F = ma Temperaturkoeffizient von λ Temperature coefficient of λ I F = ma TC V 2 mv/k TC λ +.25 nm/k Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =. sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =. sr Werte Values Strahlstärke Radiant intensity I F = ma, t p = 2 ms Strahlstärke Radiant intensity I F = A, t p = µs I e > 4 /sr I e typ. 48 /sr IRED Radiation Characteristics I rel = f (ϕ) Phototransistor Directional Characteristics S rel = f (ϕ) OHL66 ϕ

5 Kennwerte Fototransistor (T A = 25 C, λ = 88 nm) Characteristics Phototransistor Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = % von S max Spectral range of sensitivity S = % of S max Bestrahlungsempfindliche Fläche ( 24 µm) Radiant sensitive area ( 24 µm) Abmessung der Chipfläche Dimensions of chip area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Kapazität Capacitance V CE = V, f = MHz, E = Dunkelstrom Dark current V CE = 25 V, E = Fotostrom Photocurrent E e =. /cm 2, V CE = 5 V Anstiegszeit/Abfallzeit Rise time/fall time I C = ma, V CC = 5 V, R L = kω Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = 5 µa, E e =. /cm 2 Wert Value λ S max 86 nm λ 38 5 nm A.45 mm 2 L B mm mm H.5.7 mm ϕ ± 6 Grad deg. C CE 5. pf I CEO ( 2) na I PCE 6 µa t r, t f 7 µs V CEsat 5 mv

6 IRED Forward Current I F = f (V F ) T A = 25 C A - -2 OHR V 8 V F Max. Permissible Forward Current I F = f (T A ) 2 ma 8 6 OHR883 R thja = 45 K/W Rel Luminous Intensity I V / I V ( ma) = f (I F ), T A = 25 C 2 Ι e Ι e (ma) ma 4 Relative Spectral Emission I rel = f (λ) Ι rel % 8 6 OHR878 OHR877 Perm. Pulse Handling Capability I F = f (t p ), Duty cycle D = parameter, T A = 25 C 4 ma DC D = t p D = T t p OHR886 T s 2 t p Perm. Pulse Handling Capability I F = f (t p ), Duty cycle D = parameter, T A = 85 C IF 4 ma 3 tp D = T D = t P T OHF262 I F C 2 T A nm λ s t p

7 Phototransistor Rel. Spectral Sensitivity S rel = f (λ) S rel % OHF2 Photocurrent I PCE = f (V CE ), E e = Ι ma PCE OHF529 cm 2 Dark Current I CEO = f (V CE ), E = Ι na CEO OHF cm cm cm nm 2 λ Total Power Dissipation P tot = f (T A ) 2 P tot 6 2 OHF V 35 V CE Capacitance C CE = f (V CE ), f = MHz, E = 5. C CE pf OHF528-3 Photocurrent I PCE /I PCE25 = f (T A ), V CE = 5 V.6 Ι PCE Ι PCE V 35 V CE OHF C T A Dark Current I CEO = f (T A ), V CE = 5 V, E = -2 - V 2 V CE Photocurrent I PCE = f (E e ), V CE = 5 V C TA Ι 3 na CEO OHF53 3 µa PCE Ι OHF C TA m W/cm 2 E e

8 Maßzeichnung Package Outlines.8 (.3).6 (.24) 3. (.8) 2.6 (.2) 2.3 (.9) 2. (.83) (.83).7 (.67).9 (.35).7 (.28) 3.4 (.34) 3. (.8) C A C E (2.4 (.94)). (.4) typ 3.7 (.46) 3.3 (.3) Package marking 4. (.43).5 (.2).6 (.24).4 (.6).8 (.7).2 (.5) GPLY6965 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Empfohlenes Lötpaddesign Recommended Solder Pad IR-Reflow Löten IR Reflow Soldering 2.6 (.2) 3.3 (.3) 3.3 (.3).4 (.6). (.43) 4.5 (.77).5 (.59).5 (.2) 7.5 (.295) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Kathoden Markierung / Cu Fläche / 2 mm 2 per pad Cathode marking Cu-area Lötstoplack Solder resist _< OHLPY

9 Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-2B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-2B) T 3 C C 24 C 27 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile s min 3 s max OHLA687 + C 26 C -5 C 245 C ±5 C +5 C 235 C - C 5 2 s max Ramp Down 6 K/s (max) s max 5 Ramp Up 3 K/s (max) 25 C s 3 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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