GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 409

Transkript

1 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 49 Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger Gehäusegleich mit SFH 39, SFH 487 Anwendungen IR-Fernsteuerungen von Fernseh-, Rundfunkund Videogeräten, Lichtdimmern Lichtschranken bis 5 khz Münzzähler Sensorik Diskrete Optokoppler Features Very highly efficient GaAs-LED High reliability High pulse handling capability Good spectral match to silicon photodetectors Same package as SFH 39, SFH 487 Applications IR remote control for hifi and TV sets, video tape recorders, dimmers Light-reflection switches (max. 5 khz) Coin counters Sensor technology Discrete optocouplers Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 49 Q6272P86 3-mm-LED-Gehäuse (T 1), grau eingefärbt, Anschlüsse SFH 49-2 Q6272P2 im 2.54-mm-Raster ( 1 / ), Kathodenkennzeichnung: kürzerer Anschluß 3 mm LED package (T 1), grey-colored epoxy resin, solder tabs lead spacing 2.54 mm ( 1 / ), cathode marking: short lead

2 SFH 49 Grenzwerte (T A = 25 C) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Wert Value T op ; T stg 4 + C V R 5 V I F ma I FSM 3 A P tot 165 mw R thja 45 K/W Kennwerte (T A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission I F = ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = ma, t p = 2 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Abstand Chipoberfläche bis Linsenscheitel Distance chip surface to lens top Kapazität, V R = V Capacitance Wert Value λ peak 95 nm λ 55 nm ϕ ± 2 Grad deg. A.9 mm 2 L B L W.3.3 mm H 2.6 mm C o 25 pf

3 SFH 49 Kennwerte (T A = 25 C) Characteristics (cont d) Schaltzeiten, I e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Ω Switching times, Ι e from % to 9% and from 9% to%, I F = ma, R L = 5 Ω Durchlaßspannung, Forward voltage I F = ma, t p = 2 ms I F = 1 A, t p = µs Sperrstrom, Reverse current, V R = 5 V Gesamtstrahlungsfluß, Total radiant flux I F = ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, I F = ma Temperature coefficient of I e or Φ e, I F = ma Temperaturkoeffizient von V F, I F = ma Temperature coefficient of V F, I F = ma Temperaturkoeffizient von λ peak, I F = ma Temperature coefficient of λ peak, I F = ma Wert Value t r, t f.5 µs V F 1.3 ( 1.5) V F 1.9 ( 2.5) V V I R.1 ( 1) µa Φ e 15 mw TC I.55 %/K TC V 1.5 mv/k TC λ +.3 nm/k Gruppierung der Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =.1 sr Grouping of Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Strahlstärke Radiant intensity I F = ma, t p = 2 ms I F = 1 A, t p = µs I e 6.3 I e typ. SFH 49 SFH ) Werte Values SFH 49-2 SFH ) > mw/sr mw/sr 1) 1) Nicht bestellbar als Einzelgruppe. Can not be ordered as single group

4 SFH 49 Relative Spectral Emission I rel = f (λ) Ι rel % 8 OHR1938 Radiant Intensity Single pulse, t p = 2 µs Ι e Ι e ( ma) 1 Ι e Ι e ma = f (I F ) OHR864 Max. Permissible Forward Current I F = f (T A ) Ι F 12 ma OHR R thja = 45 K/W nm 6 Forward Current I F = f (V F ), Single pulse, t p = 2 µs Ι F 1 A typ. max. λ OHR A 1 Ι Permissible Pulse Handling Capability I F = f (τ), T A = 25 C duty cycle D = parameter 4 Ι ma F 5 τ D = T D = τ T F OHR865 Ι F C 12 T A V 4.5 V F Radiation Characteristics Ι rel = f (ϕ) ϕ DC τ 1 2 s OHR

5 SFH 49 Maßzeichnung Package Outlines 2.54 mm spacing.6.4 Area not flat (3.5) Chip position Cathode (SFH 49, SFH 4332) Anode (SFH 487, SFH 431) ø3.1 ø GEX625 Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. Empfohlenes Lötpaddesign Wellenlöten (TTW) Recommended Solder Pad TTW Soldering 4.8 (.189) 4 (.157) OHLPY985 Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified

6 SFH 49 Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C 1. Welle 1. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY ca 2 K/s 5 K/s 2 K/s C C 5 2 K/s Zwangskühlung forced cooling s 25 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered