GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package Lead (Pb) Free Product - RoHS Compliant SFH 420 SFH 425

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1 GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package Lead (Pb) Free Product - RoHS Compliant SFH 42 SFH 425 SFH 42 SFH 425 Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Gute Linearität (I e = f [I F ]) bei hohen Strömen Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Oberflächenmontage geeignet Gegurtet lieferbar SFH 42 Gehäusegleich mit SFH 32 SFH 425 Gehäusegleich mit SFH 325 SFH 425: Nur für IR-Reflow-Lötung geeignet. Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser Industrieelektronik Messen/Steuern/Regeln Automobiltechnik Sensorik Alarm- und Sicherungssysteme IR-Freiraumübertragung Features Very highly efficient GaAs-LED Good Linearity (Ι e = f [I F ]) at high currents DC (with modulation) or pulsed operations are possible High reliability High pulse handling capability Suitable for surface mounting (SMT) Available on tape and reel SFH 42 same package as SFH 32 SFH 425 same package as SFH 325 SFH 425: Suitable only for IR-reflow soldering. Applications Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission Typ Type SFH 42 SFH 425 Bestellnummer Ordering Code Q651A2473 Q651A2463 Gehäuse Package Kathodenkennzeichnung: abgesetzte Ecke cathode marking: beveled edge TOPLED SIDELED

2 SFH 42, SFH 425 Grenzwerte (T A = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, τ = µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm 2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Wert Value T op ; T stg 4 + C V R 5 V I F ma I FSM 3 A Einheit Unit P tot 16 mw R thja R thjs 45 2 K/W K/W Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission I F = ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Wert Value λ peak 95 nm λ 55 nm Einheit Unit ϕ ± 6 Grad deg. A.9 mm 2 L B L W.3.3 mm

3 SFH 42, SFH 425 Kennwerte (T A = 25 C) Characteristics (cont d) Bezeichnung Parameter Schaltzeiten, Ι e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Ω Switching times, Ι e from % to 9% and from 9% to%, I F = ma, R L = 5 Ω Kapazität Capacitance V R = V, f = 1 MHz Durchlassspannung Forward voltage I F = ma, t p = 2 ms I F = 1 A, t p = µs Sperrstrom Reverse current V R = 5 V Gesamtstrahlungsfluss Total radiant flux I F = ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, I F = ma Temperature coefficient of I e or Φ e, I F = ma Temperaturkoeffizient von V F, I F = ma Temperature coefficient of V F, I F = ma Temperaturkoeffizient von λ, I F = ma Temperature coefficient of λ, I F = ma Wert Value t r, t f.5 µs C o 25 pf V F 1.3 ( 1.5) V F 1.9 ( 2.5) V V I R.1 ( 1) µa Einheit Unit Φ e 14 mw TC I.55 %/K TC V 1.5 mv/k TC λ +.3 nm/k Strahlstärke I e in Achsrichtung (gemessen bei einem Raumwinkel Ω =.1 sr) Radiant Intensity I e in Axial Direction (at a solid angle of Ω =.1 sr) Bezeichnung Parameter Strahlstärke Radiant intensity I F = ma, t p = 2 ms Strahlstärke Radiant intensity I F = 1 A, t p = µs I e min 2.5 I e typ 5. Werte Values Einheit Unit mw/sr mw/sr I e typ. 38 mw/sr

4 SFH 42, SFH 425 Relative Spectral Emission I rel = f (λ) Ι rel % 8 OHR1938 Ι Radiant Intensity e Ι e ma = f (I F ) Single pulse, t p = 2 µs Ι e Ι e ( ma) 1 OHR864 Permissible Pulse Handling Capability I F = f (t p ), duty cycle D = parameter, T A = 2 C 4 Ι ma F 5 D =.5 τ D = T τ T OHR865 Ι F nm 6 Forward Current I F = f (V F ), single pulse, t p = 2 µs 1 A Ι F λ OHR A 1 Ι Max. Permissible Forward Current I F = f (T A ) Ι F 12 ma F OHR DC τ 1 2 s R thja = 45 K/W V C 12 V F T A Radiation Characteristics S rel = f (ϕ) OHL166 ϕ

5 SFH 42, SFH 425 Maßzeichnung Package Outlines SFH (typ) (2.4) ±1 Cathode marking GPL6724 SFH 425 (2.4) Cathode 2.54 spacing Anode (2.85) Cathode marking (1.4) (.3) (2.9) (R1) GPL688 Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified

6 SFH 42, SFH 425 Empfohlenes Lötpaddesign Recommended Solder Pad IR-Reflow Löten IR Reflow Soldering SFH (.2) 1.5 (.59) 4.5 (.177) 2.6 (.2) 1.5 (.59) 4.5 (.177) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist 2 Cu-Fläche > 16 mm Cu-area > 16 mm 2 OHLPY97 SFH (.146) 3. (.118) 1.2 (.47) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Cu-Fläche > 16 mm 2 Cu-area > 16 mm 2 Lötstopplack Solder resist OHLPY

7 SFH 42, SFH 425 Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-2B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-2B) T 3 C C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max s min OHLA687 + C 26 C -5 C 245 C ±5 C +5 C 235 C - C s max Ramp Down 6 K/s (max) s max 5 Ramp Up 3 K/s (max) 25 C s 3 t Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C 1. Welle 1. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY C C ca 2 K/s 5 K/s 2 K/s 5 2 K/s Zwangskühlung forced cooling s 25 t

8 SFH 42, SFH 425 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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