CrossBeam Neue Anwendungen und Ausblicke

Transkript

1 CrossBeam Neue Anwendungen und Ausblicke P. Gnauck, L. Stenner, A. Schertel, H. Schulz, H. Stegmann, D. Fischer Carl Zeiss NTS GmbH, Oberkochen

2 Carl Zeiss: Overview of Micro and Nano Technology Solutions Feature Size >1m Human Relative Integration Level Classical Optics 1mm (1m/1000) Ant (2 mm) 1 Pollen (~50 µm) Hair (~50 µm) 1µm (1m/ ) Flue virus (~100 nm) Mask (100 nm) Bacteria (a few µm) 10 6 Optical Microscopy 1nm (1m/ ) Chip Optical Litho E-Beam 1 pm (1m/ ) DNA (to 1nm) Atom (to 0,1 nm) He Ion Microscopy TEM

3 Introduction: Product Portfolio MP SEM FE SEM CrossBeam LIBRA EFTEM With courtesy of AMD Saxony LLC & Co. KG

4 CrossBeam Product Line NEON 40 NEON 40 EsB NEON 60 NVision 40

5 3D EBSD - Data Collection SEM objective lens e - FIB column sample in cutting position (36 tilt) EBSD camera Technical details: Hardware set-up sample in EBSD position (70 tilt)

6 3D EBSD with fast EBSD mapping Sample: Copper 51 slices 0.2um resolution in X, Y and Z Number of voxels: 101x91x51 EBSD speed: 200Hz, 50 sec. per slice FIB speed: about 45 minutes per slice Total EBSD time: about 1 hour Total FIB time: about 38 hours Number of sessions / interruptions: um

7 SIMS

8 SIMS vs. EDX SIMS Secondary -Ion Mass Spectroscopy EDS X-ray analysis Primariy ions: Ga kev Secondary Ions 0 30 ev X-rays Depth ~30nm Information depth ~1nm Interaction Cascade Information depth ~ 1µm

9 SIMS Hiden EQS 1000 Mass Spectrometer Neon40 with QMS

10 SIMS Depth profiling: Polyimide multilayer sample Polyimide multilayer, PI nm Au, 20 nm Ti Countrate [cps] C - Probe 85 PI/Ti/Au/Ti/PI Ga + Ti O - Na + C nA 20µm.mdc 10 2 C 2 + K Time [min] depth z [µm] PI Au PI Glass PI Au PI Ti Ti

11 SIMS: Elemental Mapping Copper Titanium Alloy Mass Spectrum SIMS Maps of a TiN Electrode Array

12 SIMS Example: Tungsten Intens SI - negative secondary ions Time [min] W d: TIC -All MS Intens. x10 4 -MS, min #( ) WO 3 Tungsten coating on glass substrate 0.6 Stable isotopes: W 26.3% WO W 14.3% WO m/z W 30.7% 186 W 28.6%

13 Ion Detection ION New Ion detector SE SE imaging SI Imaging replaces chamber SE option for all CrossBeam systems

14 Ion Detection 150 pa In-Lens FIB SE Image 150 pa Elion FIB SI Image Sample: Nickel based superalloy exhibiting intergranular corrosion secondary ion yields for most metals increase by ~ 10X to 1000X (typically ~ 50X) in the presence of electronegative species such as oxygen in particular. This makes secondary ion imaging very sensitive to the presence of corrosion, especially at grain boundaries, and makes detection of this corrosion very fast. This oxygen enhanced yield dominates other contrast mechanisms in ion imaging of metals

15 Ion Detection: SIMS on Titanium Intens Time [min] SI + positive secondary ions Intens. x Ti_00001.d: TIC +All MS 64 TiO +MS, min #( ) Titanium coating on glass 4 Stable isotopes: 3 45 Ti 8.0% 47 Ti 7.3% 2 TiO 2 H 81 TiO 4 H 5 48 Ti 73.8% 1 0 Ti TiO 3 H 3 TiO 5 H m/z 49 Ti 5.5% 50 Ti 5.4%

16 Low kv Ar Milling: NVision40 NVision 40

17 Low kv Ar Milling: System Configuration BSD / STEM Ar - Column BSD / STEM CCD BSD / STEM / Cryo transfer Inlens Detector FIB STEM EBSD Airlock SE Detector GIS Feedthrough EDS

18 Low kv Ar Milling: System Configuration SEM SEM FIB Ar + Ar + System Configuration FIB Milling Ar ion Milling

19 Low kv Ar Milling: Process Flow 30kV FIB 30kV FIB Low kv Ar + ion beam (U 1.0kV) Angle of incidence: 0 < 30 1.Rough / Medium milling: 30kV FIB 2.FIB Fine milling: 30kV FIB 3.Final polish: Low kv Ar+ ion beam

20 SEM imaging during low kv Ar ion milling 6min Insulation SE image U = 1kV Si substrate BSE image during low kv Ar ion milling U = 1kV

21 Low kv Ar Milling: Sample Uniformity BSE images of a large(40umx15um) TEM lamella (a) (b) (c) ~40um Before Argon milling After 10 minutes irradiation to the backside After additional 10 minutes irradiation to the front side Conditions : SEM 10kV 500pA, Argon 1kV 10nA 15 deg, Sample Si courtesy SIINT

22 Low kv Ar Milling: Sample Uniformity BSE Signal [a.u.] 1,2 1 0,8 0,6 0,4 0,2 0 Before Ar Irradiation Ar Back 10min Ar Back 10min / Front 10min Position [um] Plot of the BSE signal shows excellent uniformity over the whole sample courtesy SIINT

23 Sample Damage Ga + Ga Si 30kV Ga + Ga Si 5kV Ga + Ga Si 2kV Angle of incidence 2 Ga Ar Si 1kV 500V Ar+

24 Low kv Ar Milling: Sample Damage Ar + 1kV 2nm Ga + 5kV 7nm Ga + 15kV 14nm Ga + 30kV Damage layer 23nm Si Surface Sample: Silicon, Angle of incidence: 10Deg courtesy SIINT

25 Low kv Ar Milling: Milling rates and process time Time to remove damage layer Ar + Ion Energy Milling Rate 30kV FIB(23nm) 5kV FIB(7nm) 1kV Ar(2nm) 1kV 6nm/min 3.8min 1.2min 750V 3nm/min 7.6min 2.3min 40sec 500V 0.3nm/min (76min) (23min) 7min Milling rates and process times for different ion energies

26 Low kv Ar Milling: First Results Final 30kV Ga + Gate Poly Gate oxide Si sub. 40nm 5nm courtesy SIINT

27 Low kv Ar Milling: First Results Final 1kV Ar + Gate Poly Gate oxide Si sub. 40nm 5nm courtesy SIINT