Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead (Pb) Free Product - RoHS Compliant

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Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead (Pb) Free Product - RoHS Compliant SFH 23 SFH 23 Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 4 nm bis 1 nm (SFH 23) und bei 88 nm () Kurze Schaltzeit (typ. 5 ns) 5 mm-plastikbauform im LED-Gehäuse Auch gegurtet lieferbar Anwendungen Industrieelektronik Messen/Steuern/Regeln Schnelle Lichtschranken für Gleich- und Wechsellichtbetrieb LWL Features Especially suitable for applications from 4 nm to 1 nm (SFH 23) and of 88 nm () Short switching time (typ. 5 ns) 5 mm LED plastic package Also available on tape and reel Applications Industrial electronics For control and drive circuits Photointerrupters Fiber optic transmission systems Typ Type SFH 23 Bestellnummer Ordering Code Q6272P955 Q6272P956 27-3-3 1

SFH 23, Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung Total power dissipation Wert Value T op ; T stg 4 + C V R 5 V Einheit Unit P tot 15 mw Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Fotostrom Photocurrent V R = 5 V, Normlicht/standard light A, T = 2856 K, E V = lx V R = 5 V, λ = 95 nm, E e = 1 mw/cm 2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = % von S max Spectral range of sensitivity S = % of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, V R = 2 V Dark current Spektrale Fotoempfindlichkeit, λ = 85 nm Spectral sensitivity Quantenausbeute, λ = 85 nm Quantum yield I P I P SFH 23 8 ( 5) Wert Value 5 ( 3) Einheit Unit λ S max 85 9 nm λ 4 1 8 1 nm A 1 1 mm 2 L B L W 1 1 1 1 mm m m ϕ ± 2 ± 2 Grad deg. I R 1 ( 5) 1 ( 5) na S λ.62.59 A/W η.89.86 Electrons Photon 27-3-3 2

SFH 23, Kennwerte (T A = 25 C) Characteristics (cont d) Bezeichnung Parameter Leerlaufspannung Open-circuit voltage E v = Ix, Normlicht/standard light A, T = 2856 K E e =.5 mw/cm 2, λ = 95 nm Kurzschlußstrom Short-circuit current E v = Ix, Normlicht/standard light A, T = 2856 K E e =.5 mw/cm 2, λ = 95 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 5 Ω; V R = 2 V; λ = 85 nm; I p = 8 Durchlaßspannung, I F = 8 ma, E = Forward voltage Kapazität, V R = V, f = 1 MHz, E = Capacitance I SC I SC SFH 23 42 ( 35) 8 Wert Value 37 ( 3) 25 mv mv t r, t f 5 5 ns V F 1.3 1.3 V C 11 11 pf Einheit Unit Temperaturkoeffizient von TC V 2.6 2.6 mv/k Temperature coefficient of Temperaturkoeffizient von I SC Temperature coefficient of I SC Normlicht/standard light A λ = 95 nm Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 2 V, λ = 85 nm Nachweisgrenze, V R = 2 V, λ = 85 nm Detection limit TC I.18.2 NEP 2.9 14 2.9 14 D* 3.5 12 3.5 12 %/K W ----------- Hz cm Hz ------------------------- W 27-3-3 3

SFH 23, Relative Spectral Sensitivity SFH 23 S rel = f (λ) S rel % 8 OHF34 Relative Spectral Sensitivity S rel = f (λ) S rel % 8 OHF1773 Photocurrent I P = f (E v ), V R = 5 V Open-Circuit Voltage = f (E v ) SFH 23 6 6 4 4 2 2 4 6 8 nm 12 λ Photocurrent I P = f (E e ), V R = 5 V Open-Circuit-Voltage = f (E e ) OHF1128 3 4 mv Ι P 4 6 8 nm 12 λ Total Power Dissipation P tot = f (T A ) 16 mw P tot 14 OHF394 Dark Current I R = f (V R ), E = Ι R 4 pa OHF26 2 3 12 3 1 2 8 Ι P 6 2 1 4 2-1 -3-2 -1 2 mw/cm 1 Ee Directional Characteristics S rel = f (ϕ) 2 4 6 8 C TA 1 2 V 3 V R 27-3-3 4

SFH 23, Maßzeichnung Package Outlines 1.8 (.71) 1.2 (.47) spacing 2.54 (.) Cathode.4 (.16).6 (.24) 29 (1.142) 27 (1.63).4 (.16).8 (.31) Area not flat Chip position 9. (.354) 8.2 (.323) 7.8 (.37) 7.5 (.295) ø4.8 (.189) ø5.1 (.21) 4.8 (.189) 4.2 (.165) 5.9 (.232) 5.5 (.217).6 (.24).4 (.16) GEOY6645 Maße in mm (inch) / Dimensions in mm (inch). Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C 25 2 235 C... 26 C 1. Welle 1. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY598 15 C... 13 C ca 2 K/s 5 K/s 2 K/s 5 2 K/s Zwangskühlung forced cooling 5 15 2 s 25 t 27-3-3 5

SFH 23, Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg www.osram-os.com All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 27-3-3 6