SM Multi OPLED SFH 722 orläufige Daten / Preliminary Data 3. 2.6 2.3 2..8.6 2 3 2..7.9.7 C C. typ 3.4 3. E (2.4) 3.7 3.3 Package marking 4..5.8.2.6.4 GPL6965 Maβe in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified. yp ype SFH 722 Bestellnummer Ordering Code on request Wesentliche Merkmale Geeignet für apor-phase Löten und IR-Reflow Löten Features Suitable for vapor-phase and IR-reflow soldering Semiconductor Group 999-2-4
Grenzwerte Maximum Ratings Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlaßstrom (LED) Forward current (LED) Kollektorstrom (ransistor) Collector current (ransistor) Stoßstrom Surge current t µs, D =.5 Sperrspannung (LED) Reverse voltage (LED) Kollektor-Emitter Spannung (ransistor) Collector-emitter voltage (ransistor) erlustleistung otal power dissipation Wärmewiderstand Sperrschicht / Umgebung hermal resistance junction / ambient Montage auf PC-Board* (Padgröße 6 mm 2 ) mounting on pcb* (pad size 6 mm 2 ) Sperrschicht / Lötstelle junction / soldering joint op stg IRED Wert alue ransistor 4... + 4... + C 4... + 4... + C j + + C I F m I C 5 m I FM 25 75 m R 5 CE 35 P tot 8 65 R th J R th JS 5 4 45 K/W K/W * PC-board: G3/FR4 Hinweis / Notes Die angegebenen Grenzdaten gelten für einen Chip. he stated maximum ratings refer to one chip. Semiconductor Group 2 999-2-4
Kennwerte IRED ( = 25 C) Characteristics IRED Wellenlänge der Strahlung Wavelength of radiation I F = m, t p = 2 ms Spektrale Bandbreite bei 5% von I max, I F = m Spectral bandwidth at 5 % of I max, I F = m bstrahlwinkel iewing angle ktive Chipfläche ctive chip area bmessungen der aktiven Chipfläche Dimensions of active chip area Schaltzeiten, I e von % auf 9 % und von 9 % auf % Switching times, I e from % to 9 % and from 9 % to % I F = m, R L = 5 Ω Kapazität Capacitance R =, f = MHz Durchlaβspannung Forward voltage I F = m, t p = 2 ms I F =, t p = µs Sperrstrom Reverse current R = 5 Gesamtstrahlungsfluβ otal radiant flux I F = m, t p = 2 ms emperaturkoeffizient von I e bzw. Φ e emperature coefficient of I e bzw. Φ e I F = m, I F = m emperaturkoeffizient von F emperature coefficient of F I F = m emperaturkoeffizient von λ emperature coefficient of λ I F = m Wert alue λ peak 88 nm λ 8 nm ϕ ±6 Grad deg..6 mm 2 L B L W.4.4 mm t r, t f.5 µs C o 25 pf F.5 (.8) F 3. ( 3.8) I R. ( ) µ Φ e 23 C I.5 %/K C 2 m/k C λ +.25 nm/k Semiconductor Group 3 999-2-4
Strahlstärke I e in chsrichtung gemessen bei einem Raumwinkel Ω =. sr Radiant intensity I e in axial direction at a solid angle of Ω =. sr Werte alues Strahlstärke Radiant intensity I F = m, t p = 2 ms Strahlstärke Radiant intensity I F =, t p = µs I e > 4 /sr I e typ. 48 /sr IRED Radiation characteristics I rel = f (ϕ) Phototransistor Directional characteristics S rel = f (ϕ) 4 3 2 OHL66 ϕ. 5.8 6 7 8 9.6.4.2..8.6.4 2 4 6 8 2 Semiconductor Group 4 999-2-4
Kennwerte Fototransistor ( = 25 C, λ = 88 nm) Characteristics Phototransistor Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = % von S max Spectral range of sensitivity S = % of S max Bestrahlungsempfindliche Fläche ( 24 µm) Radiant sensitive area ( 24 µm) bmessung der Chipfläche Dimensions of chip area bstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Kapazität Capacitance CE =, f = MHz, E = Dunkelstrom Dark current CE = 25, E = Fotostrom Photocurrent E e =. /, CE = 5 nstiegszeit/bfallzeit Rise time/fall time I C = m, CC = 5, R L = kω Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = 5 µ, E e =. / Wert alue λ S max 86 nm λ 38... 5 nm.45 mm 2 L B.45 x.45 mm mm H.5....7 mm ϕ ± 6 Grad deg. C CE 5. pf I CEO ( 2) n I PCE 6 µ t r, t f 7 µs CEsat 5 m Semiconductor Group 5 999-2-4
IRED Forward current I F = f ( F ) = 25 C Rel luminous intensity I / I ( m) = f (I F ) = 25 C Perm. pulse handling capability I F = f (t p ) Duty cycle D = parameter, = 25 C OHR88 2 e e (m) OHR878 4 m 3..2 D =.5..2.5 OHR886 - -2-3 2 3 4 5 6 8 F Max. permissible forward current I F = f ( ) 2 m OHR883 - -2-3 2 3 m 4 Relative spectral emission I rel = f (λ) rel % 8 OHR877 2.5 DC t p D = t p -5-4 -3-2 - s 2 t p 8 R thj = 45 K/W 6 6 4 4 2 2 2 4 6 8 C2 75 8 85 9 95 nm λ Semiconductor Group 6 999-2-4
Phototransistor Rel.spectral sensitivity S rel = f (λ) Photocurrent I PCE = f ( CE ), E e = Parameter Dark current I CEO = f ( CE ), E = S rel % OHF2 m PCE OHF529 n CEO OHF527 8.5 6.25 4 -. - 2-2 4 6 8 nm 2 λ otal power dissipation P tot = f ( ) 2 P tot 6 2 OHF87-2 5 5 2 25 3 35 Cap4citance C CE = f ( CE ), f = MHz, E = 5. C CE pf 4. 3.5 3. 2.5 CE OHF528-3 Photocurrent I PCE /I PCE25 o = f ( ), CE = 5.6 PCE PCE25.4.2..8 5 5 2 25 3 35 CE OHF524 8 2..6 4.5..4.5.2 2 4 6 8 C -2-2 CE -25 25 5 75 C Dark current I CEO = f ( ), CE = 5, E = Photocurrent I PCE = f (E e ), CE = 5 3 n CEO OHF53 3 µ PCE OHF32 2 2 - -25 25 5 75 C - -3-2 m W/ E e Semiconductor Group 7 999-2-4