Hybride Impuls-Laserdiode mit integrierter Treiberstufe 25 W Spitzenleistung Hybrid Pulsed Laser Diode with Integrated Driver Stage 25 W Peak Power

Transkript

1 Hybride Impuls-Laserdiode mit integrierter Treiberstufe Spitzenleistung Hybrid Pulsed Laser Diode with Integrated Driver Stage Peak Power SPL LL90 Besondere Merkmale Kleines kostengütiges Plastik-Gehäuse Integriert sind ein FET und Kondeatoren zur Impulsateuerung InAlGaAs/GaAs kompressiv verspannte Quantenfilmstruktur Hochleistungslaser mit Large-Optical-Cavity (LOC) Struktur Laserapertur 0 µm x 2 µm Schneller Betrieb (< Impulsbreite) Niedrige Versorgungsspannung (< V) Anwendungen Entfernungsmessung Sicherheit, Überwachung Beleuchtung, Zündung Test- und Messsysteme Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das mechliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Norm behandelt werden. Features Low cost, small size plastic package Integrated FET and capacitors for pulse control Strained InAlGaAs/GaAs Q-structures High power large-optical-cavity laser structure Laser aperture 0 µm x 2 µm High-speed operation (< pulse width) Low supply voltage (< V) Applicatio Range finding Security, surveillance Illumination, ignition Testing and measurement Safety advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautio given in IEC Safety of laser products Typ Type Opt. Spitzenausgangsleistung Opt. Peak Power ellenlänge avelength Bestellnummer Ordering Code SPL LL90 90 nm Q62702P

2 Grenzwerte (kurzzeitiger Betrieb) (T A = C) Maximum Ratings (short time operation) Spitzenausgangsleistung Peak output power Ladespannung (V G = 1 V) Charge voltage (V G = 1 V) Gate-Spannung Gate voltage Tastverhältnis Duty cycle Betriebstemperatur Operating temperature Lagertemperatur Storage temperature Löttemperatur (t max = s) Soldering temperature (t max = s) erte Values min. max. V C V V G + V d.c. 0.1 % T op C T stg C T s C Einheit Unit

3 Optische Kennwerte (T A = C) Optical Characteristics erte Values min. typ. max. Zentrale Emissiowellenlänge 1) λ nm Emission wavelength 1) Spektralbreite (Halbwertsbreite) 1) λ 7 9 nm Spectral width (FHM) 1) Spitzenausgangsleistung 1) Peak output power 1) Ladespannung an der Laserschwelle Charge Voltage at laser threshold U C, th V 1), 2) Atiegs- und Abfallzeit (% 90%) Rise and fall time (% 90%) 1), 2) t r, t f Austrittsöffnung Aperture size Strahldivergenz (Halbwertsbreite) parallel zum pn-übergang 1) Beam divergence (FHM) parallel to pn junction 1) Strahldivergenz (Halbwertsbreite) senkrecht zum pn-übergang 1) Beam divergence (FHM) perpendicular to pn-junction 1) Temperaturkoeffizient der ellenlänge Temperature coefficient of wavelength Thermischer iderstand Thermal resistance Eichaltpunkt der Gate-Spannung Switch on gate voltage - - Einheit Unit w h 0 2 µm 2 θ Grad deg. θ Grad deg. λ / T nm/k R th 0 K/ V G on 4.0 V 1) erte beziehen sich auf folgende Standardbetriebsbedingung: Pulsbreite, 1 khz Pulswiederholrate, 16 V Ladespannung, 1 V Gate-Spannung und C Umgebungstemperatur. Der Laser wird angesteuert mit dem MOSFET-Treiber Elantec EL74C. Values refer to the following standard operating conditio: pulse width, 1 khz pulse repetition rate, 16 V charge voltage, 1 V gate voltage and C ambient temperature. The laser is driven by the MOSFET driver Elantec EL74C. 2) Die Schaltgeschwindigkeit ist abhängig von Strom und Geschwindigkeit, mit der die Gate-Kapazität (typ. 0 pf) des internen Traistors geladen wird. Geringere Atiegs- und Abfallzeiten erhält man bei reduzierter optischer Spitzenleistung (siehe Diagramme auf Seite ) Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 0 pf) of the internal traistor. Reduced rise and fall times occur at reduced optical peak power (see diagrams on page )

4 Optical output power vs charge voltage V c (t p = ) 3 OHL01939 Optical spectrum, relative inteity I rel vs. wavelength λ ( =, t p = ) I rel 0 7 OHL V Far-field distribution parallel to junction I rel vs. angle θ V c nm 940 Far-field distribution perpendicular to junction I rel vs. angle θ λ 1.00 OHL OHL0194 I rel I rel Deg 40 θ Deg 40 θ

5 Optical pulse form for variing trigger pulse widths (MOSFET driver Elantec EL74C) 1 OHL01940 Trigger Pulse idth Optical pulse width vs. trigger pulse width (MOSFET driver Elantec EL74C) Optical Pulse idth FHM OHL t Optical peak power, fall and rise time vs. pulse width (MOSFET driver Elantec EL74C) 40 3 OHL Trigger Pulse idth Optical peak power vs. optical pulse energy (MOSFET driver Elantec EL74C) OHL Peak Power Fall Time 1 Rise/Fall Time 1 Rise Time Pulse idth FHM µj 1.4 Optical Pulse Energy

6 Maßzeichnung Package Outlines 4.9 (0.193) ±0.2 (0.008) 1.0 (0.041) ±0.3 (0.012) +0.4 (0.016) -0. (0.0) 2.4 (0.094) ±0.2 (0.008) 1.3 (0.03) ±0.2 (0.008) R0.3 (0.012) (12.2 (0.480)) 0.3 (0.012) Laser Diode (2.3 (0.093)) 8.6 (0.339) ±0.4 (0.016) (0.197) ±0.2 (0.008) Surface not flat 2. (0.098) ±0.2 (0.008).2 (0.992) 24.2 (0.93) 1.8 (0.071) 1.2 (0.047) 2 1 V C Trigger V G FET G D S C C 0. (0.0) ±0.1 (0.004) spacing 2.4 (0.0) 0.6 (0.024) 0.4 (0.016) 3 GND Laser diode GOY6124 R0. (0.0) Maße werden wie folgt angegeben: mm (inch) / Dimeio are specified as follows: mm (inch)

7 Published by OSRAM Opto Semiconductors GmbH ernerwerkstrasse 2, D-949 Regeburg All Rights Reserved. The information describes the type of component and shall not be coidered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. e can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of traport. For packing material that is returned to us uorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered