IR-Lumineszenzdiode (8 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (8 nm) Lead (Pb) Free Product - RoHS Compliant SFH 42 Wesentliche Merkmale Infrarot LED mit sehr hoher Ausgangsleistung Kurze Schaltzeiten Anwendungen Infrarotbeleuchtung für CMOS Kameras IR-Datenübertragung Sensorik Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 682-1 und 62471 behandelt werden. Features High Power Infrared LED Short switching times Applications Infrared Illumination for CMOS cameras IR Data Transmission Optical sensors Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 682-1 and IEC 62471. Typ Type Bestellnummer Ordering Code SFH 42 Q611A2467 >1 (typ. 1) Strahlstärkegruppierung 1) (I F = 1 ma, t p = 2 ms) Radiant Intensity Grouping 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel Ω =.1 sr / measured at a solid angle of Ω =.1 sr 29--14 1
Grenzwerte (T A = 2 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Stoßstrom, t p = 2 μs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm 2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (T A = 2 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission I F = 1 ma Centroid-Wellenlänge der Strahlung Centroid wavelength I F = 1 ma Spektrale Bandbreite bei % von I max Spectral bandwidth at % of I max I F = 1 ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Wert Value T op, T stg 4 + 1 C V R V I F 1 ma I FSM 1 A Einheit Unit P tot 18 mw R thja R thjs 4 2 Wert Value K/W K/W λ peak 86 nm λ centroid 8 nm Δλ 42 nm Einheit Unit ϕ ± 6 Grad deg. A.9 mm 2 29--14 2
Kennwerte (T A = 2 C) Characteristics (cont d) Bezeichnung Parameter Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei I F = 1 ma, R L = Ω Switching times, Ι e from 1% to 9% and from 9% to 1%, I F = 1 ma, R L = Ω Durchlassspannung Forward voltage I F = 1 ma, t p = 2 ms I F = 1 A, t p = 1 µs Sperrstrom Reverse current Gesamtstrahlungsfluss Total radiant flux I F = 1 ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, I F = 1 ma Temperature coefficient of I e or Φ e, I F = 1 ma Temperaturkoeffizient von V F, I F = 1 ma Temperature coefficient of V F, I F = 1 ma Temperaturkoeffizient von λ, I F = 1 ma Temperature coefficient of λ, I F = 1 ma L B L W.3.3 mm² t r, t f 12 ns V F V F 1. (< 1.8) 2.4 (< 3.) I R Wert Value not designed for reverse operation Einheit Unit V V μa Φ e typ 4 mw TC I. %/K TC V.7 mv/k TC λ +.3 nm/k 29--14 3
Strahlstärke I e in Achsrichtung 1) gemessen bei einem Raumwinkel Ω =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Bezeichnung Parameter Werte Values Einheit Unit SFH 42-R SFH 42-S Strahlstärke Radiant intensity I F = 1 ma, t p = 2 ms I e min 1 I e max 2 16 32 mw/sr mw/sr Strahlstärke Radiant intensity I F = 1 A, t p = 1 μs I e typ 1 14 mw/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics I rel = f (ϕ) 4 3 2 1 OHL166 ϕ 1..8 6 7 8 9.6.4.2 1 1..8.6.4 2 4 6 8 1 12 29--14 4
Relative Spectral Emission I rel = f (λ) I rel 1 % 8 6 4 2 OHF413 Radiant Intensity Single pulse, t p = 2 μs I 1 1 e e (1 ma) I 1 1-1 -2 1 I e I e 1 ma = f (I F ) OHL171 Max. Permissible Forward Current I F = f (T A ), R thja = 4 K/W Ι F 12 ma 1 8 6 4 2 OHR883 R thja = 4 K/W 7 7 8 8 Forward Current I F = f (V F ) Single pulse, t p = 2 μs nm λ 9 1-3 1 1 1 2 1 3 ma 1 I F Permissible Pulse Handling Capability I F = f (τ), T A = 2 C, duty cycle D = parameter 2 4 6 8 1 C 12 T A I F 1 A OHL1713 OHF26 1.2 t P A I t F D P = IF T 1. T -1 1 1-2 -3 1.8.6.4.2 D =..1.2.33..1.2. 1 1-4. 1 1. 2 2. V3 V F - -4-3 -2-1 1 2 1 1 1 1 1 1 1 s 1 t p 29--14
Maßzeichnung Package Outlines (2.4 (.94)) 2.8 (.11) Cathode 2.4 (.94) 2.4 (.1) spacing 4.2 (.16) 3.8 (.1) 1.1 (.43).9 (.3) Anode.7 (.28) (2.8 (.112)) Cathode marking (1.4 (.)) (2.9 (.114)) (R1) (.3 (.12)) 3.8 (.1) 3.4 (.134) C A 4.2 (.16) 3.8 (.1) GPLY688 Maße in mm (inch) / Dimensions in mm (inch). Gehäuse / Package Anschlussbelegung Pin configuration SIDELED, klarer Verguss / SIDELED, clear resin siehe Zeichnung see drawing 29--14 6
Empfohlenes Lötpaddesign Recommended Solder Pad Design 3.7 (.146) 3. (.118) 1.2 (.47) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Cu-Fläche > 16 mm 2 Cu-area > 16 mm 2 Lötstopplack Solder resist OHLPY96 Maße in mm (inch) / Dimensions in mm (inch). 29--14 7
Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-STD-2C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-2C) T 3 C 2 2 2 C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max 1 s min OHLA687 + C 26 C - C 24 C ± C + C 23 C - C 1 1 12 s max Ramp Down 6 K/s (max) 1 s max Ramp Up 3 K/s (max) 2 C 1 1 2 2 s 3 t Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C 2 2 23 C... 26 C 1. Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY98 1 1 1 C... 13 C ca 2 K/s K/s 2 K/s 2 K/s Zwangskühlung forced cooling 1 1 2 s 2 t 29--14 8
Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93 Regensburg www.osram-os.com All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 29--14 9