Silizium-PIN-Fotodiode Silicon PIN Photodiode SFH 206 K

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Silizium-PIN-Fotodiode Silicon PIN Photodiode SFH 26 K Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 4 nm bis 11 nm Kurze Schaltzeit (typ. 2 ns) 5-mm-Plastikbauform im LED-Gehäuse Auch gegurtet lieferbar Anwendungen Computer-Blitzlichtgeräte Lichtschranken für Gleich- und Wechsellichtbetrieb Industrieelektronik Messen/Steuern/Regeln Features Especially suitable for applications from 4 nm to 11 nm Short switching time (typ. 2 ns) 5 mm LED plastic package Also available on tape and reel Applications Computer-controlled flashes Photointerrupters Industrial electronics For control and drive circuits Typ Type SFH 26 K Bestellnummer Ordering Code Q6272-P129 21-2-22 1

SFH 26 K Grenzwerte Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, T A = 25 C Total power dissipation T op ; T stg 4 + 1 C T S 23 C V R 32 V P tot 15 mw Kennwerte (T A = 25 C, Normlicht A, T = 2856 K) Characteristics (T A = 25 C, standard light A, T = 2856 K) Fotoempfindlichkeit, V R = 5 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1% von S max Spectral range of sensitivity S = 1% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, V R = 1 V Dark current Spektrale Fotoempfindlichkeit, λ = 85 nm Spectral sensitivity S 8 ( 5) na/ix λ S max 85 nm λ 4 11 nm A 7. mm 2 L B 2.65 2.65 mm mm L W H 1.2 1.4 mm ϕ ± 6 Grad deg. I R 2 ( 3) na S λ.62 A/W 21-2-22 2

SFH 26 K Kennwerte (T A = 25 C, Normlicht A, T = 2856 K) Characteristics (T A = 25 C, standard light A, T = 2856 K) (cont d) Quantenausbeute, λ = 85 nm Quantum yield Leerlaufspannung, E v = 1 Ix Open-circuit voltage Kurzschlußstrom, E v = 1 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 5 Ω; V R = 5 V; λ = 85 nm; I p = 8 µa η.9 Electrons Photon V O 365 ( 31) mv I SC 8 µa t r, t f 2 ns Durchlaßspannung, I F = 1 ma, E = V F 1.3 V Forward voltage Kapazität, V R = V, f = 1 MHz, E = C 72 pf Capacitance Temperaturkoeffizient von V O TC V 2.6 mv/k Temperature coefficient of V O Temperaturkoeffizient von I SC Temperature coefficient of I SC TC I.18 %/K Rauschäquivalente Strahlungsleistung NEP 4.2 1 14 W Noise equivalent power ----------- Hz V R = 1 V, λ = 85 nm Nachweisgrenze, V R = 1 V, λ = 85 nm Detection limit D* 6.3 1 12 cm Hz ------------------------- W 21-2-22 3

SFH 26 K Relative Spectral Sensitivity S rel = f (λ) S rel 1 % OHF78 Photocurrent I P = f (E v ), V R = 5 V Open-Circuit Voltage V O = f (E v ) Total Power Dissipation P tot = f (T A ) 16 mw P tot 14 OHF394 8 12 6 1 8 4 6 2 4 2 4 Dark Current I R = f (V R ), E = 5 6 7 8 9 nm 11 λ Capacitance C = f (V R ), f = 1 MHz, E = Dark Current I R = f (T A ), V R = 1 V, E = Ι R 1 3 na 2 4 6 8 C 1 TA OHF82 1 2 1 1 1 Directional Characteristics S rel = f (ϕ) -1 1 2 4 6 8 C 1 TA 4 3 2 1 ϕ 1. OHF142 5.8 6.6 7.4 8.2 9 1 1..8.6.4 2 4 6 8 1 12 21-2-22 4

SFH 26 K Maßzeichnung Package Outlines Area not flat 6.9 (.272) 6.3 (.248).8 (.31) 4. (.157).8 (.31).4 (.16) 34 (1.339) 32 (1.26).6 (.24) x.5 (.2).4 (.16) x.3 (.12) 1.8 (.71) 1.2 (.47) 2.54 (.1) spacing Radiant sensitive area 5.1 (.21) 4.7 (.185) Cathode 4.1 (.161) 3.7 (.146) GEOY6647 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 21-2-22 5