Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead (Pb) Free Product - RoHS Compliant BPW 21

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Transkript:

Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead (Pb) Free Product - RoHS Compliant BPW 21 Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 350nm bis 820nm Angepaßt an die Augenempfindlichkeit (V λ ) Hermetisch dichte Metallbauform (ähnlich TO-5) Anwendungen Belichtungsmesser für Tageslicht Für Kunstlicht mit hoher Farbtemperatur in der Fotografie und Farbanalyse Features Especially suitable for applications from 350nm to 820nm Adapted to human eye sensitivity (V λ ) Hermetically sealed metal package (similar to TO-5) Application Exposure meter for daylight For artificial light of high color temperature in photographic fields and color analysis Typ Type BPW 21 Bestellnummer Ordering Code Q62702P0885 2007-04-03 1

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, T A = 25 C Total power dissipation Wert Value T op ; T stg 40 + 80 C V R 10 V Einheit Unit P tot 250 mw Kennwerte (T A = 25 C, Normlicht A, T = 2856 K) Characteristics (T A = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Fotoempfindlichkeit, V R = 5 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von S max Spectral range of sensitivity S = 10% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle DunkelstromV R = 10 V Dark current V R = 5 V V R = 10 mv Spektrale Fotoempfindlichkeit, λ = 550 nm Spectral sensitivity Quantenausbeute, λ = 550 nm Quantum yield Leerlaufspannung, E v = 1000 Ix Open-circuit voltage Wert Value Einheit Unit S 10 ( 5.5) na/ix λ S max 550 nm λ 350 820 nm A 7.34 mm 2 L B L W 2.73 2.73 mm mm ϕ ± 55 Grad deg. I R I R 2 ( 30) 8 ( 200) na pa S λ 0.34 A/W η 0.80 Electrons Photon V O 400 ( 320) mv 2007-04-03 2

Kennwerte (T A = 25 C, Normlicht A, T = 2856 K) Characteristics (T A = 25 C, standard light A, T = 2856 K) (cont d) Bezeichnung Parameter Kurzschlußstrom, E v = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 1 kω; V R = 5 V; λ = 550 nm; I p = 10 μa Durchlaßspannung, I F = 100 ma, E = 0 Forward voltage Kapazität, V R = 0 V, f = 1 MHz, E = 0 Capacitance I SC 10 μa t r, t f 1.5 μs V F 1.2 V C 0 580 pf Temperaturkoeffizient von V O TC V 2.6 mv/k Temperature coefficient of V O Temperaturkoeffizient von I SC TC I 0.05 %/K Temperature coefficient of I SC Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 5V, λ = 550 nm Nachweisgrenze, V R = 5V, λ = 550 nm Detection limit Wert Value NEP 7.2 10 14 D* 1 10 12 Einheit Unit W ----------- Hz cm Hz ------------------------- W 2007-04-03 3

Relative Spectral Sensitivity S rel = f (λ) Photocurrent I P = f (E v ), V R = 5 V Open-Circuit Voltage V O = f (E v ) Total Power Dissipation P tot = f (T A ) Dark Current I R = f (V R ) Capacitance C = f (V R ), f = 1 MHz, E = 0 Dark Current I R = f (T A ), V R = 5 V Directional Characteristics S rel = f (ϕ) 2007-04-03 4

Maßzeichnung Package Outlines Chip position ø9.5 (0.374) ø9.0 (0.354) ø8.3 (0.327) ø8.0 (0.315) 1.75 (0.069) 1.55 (0.061) ø0.45 (0.018) Cathode 5.08 (0.200) spacing 0.85 (0.033) 0.65 (0.026) Radiant sensitive area ø6.0 (0.236) ø5.8 (0.228) 3.4 (0.134) 14.5 (0.571) 3.0 (0.118) 12.5 (0.492) 0.3 (0.012) max Approx. weight 2 g 1.0 (0.039) 0.8 (0.031) GMOY6011 Maße in mm (inch) / Dimensions in mm (inch). Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802) T 300 C 250 200 235 C... 260 C 1. Welle 1. wave 10 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY0598 150 100 100 C... 130 C ca 200 K/s 5 K/s 2 K/s 50 2 K/s Zwangskühlung forced cooling 0 0 50 100 150 200 s 250 t 2007-04-03 5

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 6