IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4231

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1 IR-Lumineszenzdiode (94 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (94 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4231 Wesentliche Merkmale IR-Lichtquelle mit hohem Wirkungsgrad Chipgröße (emittierende Fläche) 1 x 1 mm 2 max. Gleichstrom 1 A niedriger Wärmewiderstand (1 K/W) Schwerpunktswellenlänge 94 nm ESD-sicher bis 2 kv nach JESD22-A114-E Anwendungen Infrarotbeleuchtung für Kameras Überwachungssysteme IR-Datenübertragung Fahrer-Assistenz Systeme Maschinensicherheit Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen und behandelt werden. Features IR lightsource with high efficiency die-size (emitting area) 1 x 1 mm 2 max. DC-current 1 A Low thermal resistance (1 K/W) Center of spectral emission at 94 nm ESD save up to 2 kv acc. to JESD22-A114-E Applications Infrared Illumination for cameras Surveillance systems IR Data Transmission Driver assistance systems Machine security Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC and IEC Typ Type Bestellnummer Ordering Code SFH 4231 Q611A (typ. ) 1) gemessen mit Ulbrichtkugel / measured with integrating sphere Gesamtstrahlungsfluss 1) ( = 1A, t p = 1 µs) Total Radiant Flux 1) Φ e (mw)

2 Grenzwerte (T A = 2 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Stoßstrom, t p < 1 ms, D =.2 Surge current Leistungsaufnahme Power consumption Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (T A = 2 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 1 A, t p = 1 ms Centroid-Wellenlänge der Strahlung Centroid wavelength = 1 A, t p = 1 ms Spektrale Bandbreite bei % von I max Spectral bandwidth at % of I max = 1 A, t p = 1 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Wert Value T op, T stg C T J + 12 C V R 1 V 1 A SM 2 A P tot 2.4 W Einheit Unit R thjs 1 K/W Wert Value λ peak 9 nm λ centroid 94 nm Δλ 4 nm Einheit Unit ϕ ± 6 Grad deg. A 1 mm 2 L B L W 1 1 mm²

3 Kennwerte (T A = 2 C) Characteristics (cont d) Bezeichnung Parameter Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, = 1 A, R L = Ω Switching times, Ι e from 1% to 9% and from 9% to 1%, = 1 A, R L = Ω Durchlassspannung Forward voltage = 1 A, t p = 1 µs Strahlstärke Radiant intensity = 1 A, t p = 1 μs Temperaturkoeffizient von I e bzw. Φ e Temperature coefficient of I e or Φ e = 1 A, t p = 1 ms Temperaturkoeffizient von V F Temperature coefficient of V F = 1 A, t p = 1 ms Temperaturkoeffizient von λ Temperature coefficient of λ = 1 A, t p = 1 ms Wert Value t r, t f 2 ns V F 1.8 (< 2.4) V Einheit Unit I e typ 17 mw/sr TC I. %/K TC V 1 mv/k TC λ,centroid +.3 nm/k

4 Gesamtstrahlungsfluss 1) Φ e Total Radiant Flux 1) Φ e Bezeichnung Parameter Werte Values Einheit Unit SFH 4231-CX SFH 4231-DX Gesamtstrahlungsfluss Total Radiant Flux = 1 A, t p = 1 µs Φ e min 32 Φ e max 63 1 mw mw 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics I rel = f (ϕ) OHL166 ϕ

5 Relative spektrale Emission Relative Spectral Emission I rel = f (λ) I rel 1 % OHF289 Durchlassstrom Forward Current = f (V F ) Single pulse, t p = 1 μs 1 1 A OHF2894 Relativer Gesamtstrahlungsfluss Relative Total Radiant Flux Φ e /Φ e (1mA) = f ( ) Single pulse, t p = 1 μs 1 1 Φe Φe (1 ma) OHF nm 12 λ V 3 V F ma 1 Max. zulässiger Durchlassstrom Max. Permissible Forward Current = f (T A ), R thjs = 1 K/W 12 ma 8 6 OHF281 Zulässige Impulsbelastbarkeit Permissible Pulse Handling Capability = f (t p ), T A = 8 C, Duty cycle D = parameter 2. A OHF283 D = C 1 T S. tp tp D = T T s 1 t p

6 Maßzeichnung 1) Package Outlines 6.2 (.244).8 (.228) R1. (.9) 1.9 (.7) 1.7 (.67) Cathode 11.2 (.441) 1.8 (.42) 1.2 (.47).8 (.31) (ø4.2 (.16)) 1. (.39).8 (.31) 2. (.79) 1.6 (.63)...1 (.4).29 (.11).24 (.9) 7.2 (.283) 6.8 (.268) GPLY771 Kathodenkennung: Cathode mark: Gewicht / Approx. weight: Markierung mark.2 g Gurtung / Polarität und Lage Method of Taping / Polarity and Orientation Verpackungseinheit 8/Rolle, ø18 mm Packing unit 8/reel, ø18 mm Cathode/Collector Side 4 (.17) 1. (.61) 2 (.79) 1.7 (.69) 11. (.43) 12.4 (.488) 24 (.94).3 (.12).3 (.12) 7.3 (.289) 6.3 (.2) 8 (.31) 1.9 (.7) OHAY8 1) Maße in mm (inch) / Dimensions in mm (inch)

7 Empfohlenes Lötpaddesign Recommended Solder Pad Design.3 (.12) ø2. (.98) ø4. (.17) Lötstopplack Solder resist Lötpasten Schablone Solder paste stencil Bare Copper Freies Kupfer 12. (.472) 11.6 (.47) 2.3 (.91) 1.6 (.63) Kupfer Copper 1 (.394) 11.6 (.47) 1.6 (.63) ø4. (.17) Heatsink attach Footprint 2.3 (.91) 3 Lötstellen 3 solder points Thermisch optimiertes PCB Thermal enhanced PCB OHAY681 Achtung: Anode und Heatsink sind elektrisch verbunden Attention: Anode and Heatsink are electrically connected

8 Lötbedingungen Vorbehandlung nach JEDEC Level 4 Soldering Conditions Preconditioning acc. to JEDEC Level 4 Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering (nach J-STD-2C) (acc. to J-STD-2C) T 3 C C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 1 s min 3 s max OHLA687 + C 26 C - C 24 C ± C + C 23 C - C 1 12 s max Ramp Down 6 K/s (max) 1 s max 1 Ramp Up 3 K/s (max) 2 C s 3 t Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered