Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 429 Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Leistungsstarke GaAs-LED (4mW) Hoher Wirkunsgrad bei kleinen Strömen Typische Peakwellenlänge 95nm Anwendungen Schnelle Datenübertragung mit Übertragungsraten bis 1 Mbaud (IR Tastatur, Joystick, Multimedia) Analoge und digitale Hi-Fi Audio- und Videosignalübertragung Batteriebetriebene Geräte (geringe Stromaufnahme) Anwendungen mit hohen Zuverlässigkeitsansprüchen bzw. erhöhten Anforderungen Alarm- und Sicherungssysteme IR Freiraumübertragung Features High Power GaAs-LED (4mW) High Efficiency at low currents Typical peak wavelength 95nm Applications High data transmission rate up to 1 Mbaud (IR keyboard, Joystick, Multimedia) Analog and digital Hi-Fi audio and video signal transmission Low power consumption (battery) equipment Suitable for professional and high-reliability applications Alarm and safety equipment IR free air transmission Typ Type Bestellnummer Ordering Code SFH 429 Q6511A251 24 (> 1) Strahlstärkegruppierung 1) (I F = 1mA, t p = 2 ms) Radiant Intensity Grouping 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel Ω =.1 / measured at a solid angle of Ω =.1 sr 28-1-14 1
Grenzwerte (T A = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, t p = 1 µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm 2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Wert Value T op ; T stg 4 + 1 C V R 3 V I F (DC) 1 ma I FSM 2.2 A Einheit Unit P tot 18 mw R thja R thjs 45 2 K/W K/W 28-1-14 2
Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission I F = 1 ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = 1 ma, t p = 2 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei I F = 1 ma, t p = 2 ms, R L = 5 Ω Switching times, Ι e from 1% to 9% and from 9% to1%, I F = 1 ma, t p = 2 ms, R L = 5 Ω Durchlassspannung, Forward voltage I F = 1 ma, t p = 2 ms I F = 1 A, t p = 1 µs Sperrstrom Reverse current V R = 3 V Gesamtstrahlungsfluss Total radiant flux I F = 1 ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, I F = 1 ma Temperature coefficient of I e or Φ e, I F = 1 ma Temperaturkoeffizient von V F, I F = 1 ma Temperature coefficient of V F, I F = 1 ma Temperaturkoeffizient von λ, I F = 1 ma Temperature coefficient of λ, I F = 1 ma Wert Value λ peak 95 nm λ 4 nm Einheit Unit ϕ ± 25 Grad deg. A.9 mm 2 L B L W.3.3 mm² t r, t f 1 ns V F 1.5 ( 1.8) V F 3.2 ( 4.3) V V I R.1 ( 1) µa Φ e 4 mw TC I.44 %/K TC V 1.5 mv/k TC λ +.2 nm/k 28-1-14 3
Strahlstärke I e in Achsrichtung 1) gemessen bei einem Raumwinkel Ω =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Bezeichnung Parameter Strahlstärke Radiant intensity I F = 1 ma, t p = 2 ms Strahlstärke Radiant intensity I F = 1A, t p = 1 µs I e min 1 I e max 2 Werte Values SFH 429-R SFH 429-S SFH 429-T 16 32 25 5 Einheit Unit mw/sr mw/sr I e typ. 1 14 18 mw/sr 1) 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) Only one group in one packing unit, (variation lower 2:1) 28-1-14 4
Relative Spectral Emission I rel = f (λ) Ι erel 1 8 OHF777 Radiant Intensity Single pulse, t p = 2 µs 1 2 Ι e Ι e (1 ma) I e I e 1 ma = f (I F ) OHF89 Max. Permissible Forward Current I F = f (T A ), R thja 1) 12 Ι ma F 1 OHF359 8 6 1 R thja = 375 K/W 6 4 1-1 4 2 1-2 2 8 85 9 95 1 nm 11 λ Forward Current I F = f (V F ) single pulse, t p = 2 µs 1-3 1 1 1 1 2 1 3 ma 1 4 Ι F Permissible Pulse Handling Capability I F = f (τ), T A = 25 C, duty cycle D = parameter 2 4 6 8 1 C 12 T A 1 4 ma Ι F 1 3 OHF784 1 1 A I F 5 t D = T P t P T OHF4 I F 1 2 1 1 1 1-1 1 5 D =.5.1.2.5.1.2.5 1 1-2 1-3.5 1 1.5 2 2.5 3 3.5 V 4.5 V F Radiation Characteristics I rel = f (ϕ) 5 4 3 2 ϕ 1 1. -1 1 1-5 1-4 1-3 1-2 1-1 1 1 1 s 1 2 t p OHL732.8 6.6 7.4 8.2 9 1 1..8.6.4 2 4 6 8 1 12 1) Thermal resistance junction - ambient mounted on PC-board (FR4), pad size 16 mm 2 (each). 28-1-14 5
Maßzeichnung Package Outlines 3.5 (.138) max. 3. (.118) 2.6 (.12) 2.3 (.91) 2.1 (.83) 1 2.1 (.83) 1.7 (.67).9 (.35).7 (.28) ø2.55 (.1) Package marking 1.1 (.43).5 (.2) 3.4 (.134) 3. (.118) 3.7 (.146) 3.3 (.13) ø2.6 (.12) 2.6 (.24).4 (.16).1 (.4) (typ.).18 (.7).13 (.5) GEOY6956 Maße in mm (inch) / Dimensions in mm (inch). Gehäuse / Package Anschlussbelegung pin configuration Farbe Color TOPLED mit Linse (P-LCC-2) / TOPLED with lens (P-LCC-2) 1 = Anode / anode 2 = Kathode / cathode weiß white 28-1-14 6
Empfohlenes Lötpaddesign Recommended Solder Pad Reflow Löten Reflow Soldering 2.6 (.12) 1.5 (.59) 4.5 (.177) 2.6 (.12) 1.5 (.59) 4.5 (.177) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist 2 Cu-Fläche > 16 mm Cu-area > 16 mm 2 OHLPY97 28-1-14 7
Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-STD-2C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-2C) T 3 C 25 2 255 C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max 1 s min OHLA687 + C 26 C -5 C 245 C ±5 C +5 C 235 C - C 15 1 12 s max Ramp Down 6 K/s (max) 1 s max 5 Ramp Up 3 K/s (max) 25 C 5 1 15 2 25 s 3 t Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C 25 2 235 C... 26 C 1. Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY598 15 1 1 C... 13 C ca 2 K/s 5 K/s 2 K/s 5 2 K/s Zwangskühlung forced cooling 5 1 15 2 s 25 t 28-1-14 8
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg www.osram-os.com All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 28-1-14 9