IGBTModule IGBTModules Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage T vj = 25 C Kollektor Dauergleichstrom T c = 55 C DC collector current T c = 25 C V CES 6 I C,nom. 5 A I C 55 A V Periodischer Kollektor Spitzenstrom repetitive peak collector current t p = 1ms, T c = 55 C I CRM 1 A Gesamt Verlustleistung total power dissipation T c = 25 C, Transistor P tot 22 W Gate Emitter Spitzenspannung gate emitter peak voltage V GES +2 V Dauergleichstrom DC forward current I F 5 A Periodischer Spitzenstrom repetitive peak forward current t p = 1ms I FRM 1 A Grenzlastintegral I²t value V R = V, t p = 1ms, T vj = 125 C I²t 63 A²s Isolations Prüfspannung insulation test voltage RMS, f= 5Hz, t= 1min V ISOL 2,5 kv Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung V GE = 15V, T vj = 25 C, I C = I C,nom collector emitter saturation voltage V GE = 15V, T vj = 125 C, I C = I C,nom V CEsat min. typ. max. 1,95 2,55 V 2,2 V Gate Schwellenspannung gate threshold voltage V CE = V GE, T vj = 25 C, I C = 1mA V GE(th) 4,5 5,5 6,5 V Gateladung gate charge V GE = 15V...+15V Q G,3 µc Eingangskapazität input capacitance f= 1MHz, T vj = 25 C, V CE = 25V, V GE = V C ies 2,2 nf Rückwirkungskapazität reverse transfer capacitance f= 1MHz, T vj = 25 C, V CE = 25V, V GE = V C res,2 nf Kollektor Emitter Reststrom collector emitter cut off current V CE = 6V, V GE = V, T vj = 25 C I CES 5 ma Gate Emitter Reststrom gate emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES 4 na prepared by: P. Kanschat date of publication: 221125 approved: R. Keggenhoff revision: 2.1 1 (9)
IGBTModule IGBTModules Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (induktive Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data I C = 5A, V CC = 3V V GE = ±15V, R G = 3,3Ω, T vj = 25 C V GE = ±15V, R G = 3,3Ω, T vj = 125 C I C = 5A, V CC = 3V V GE = ±15V, R G = 3,3Ω, T vj = 25 C V GE = ±15V, R G = 3,3Ω, T vj = 125 C I C = 5A, V CC = 3V V GE = ±15V, R G = 3,3Ω, T vj = 25 C V GE = ±15V, R G = 3,3Ω, T vj = 125 C I C = 5A, V CC = 3V V GE = ±15V, R G = 3,3Ω, T vj = 25 C V GE = ±15V, R G = 3,3Ω, T vj = 125 C I C = 5A, V CC = 3V, V GE = 15V R G = 3,3Ω, T vj = 125 C, L σ = 15nH I C = 5A, V CC = 3V, V GE = 15V R G = 3,3Ω, T vj = 125 C, L σ = 15nH t P 1µsec, V GE 15V, T vj = 125 C, V CC =36V, V CEmax =V CES L σce di/dt t d,on t r t d,off t f E on E off 1,35 mj I SC min. typ. max. 42 ns 43 ns 11 ns 12 ns 12 ns 13 ns 2 ns 3 ns,5 mj 225 A Modulinduktivität stray inductance module L σce 35 nh Leitungswiderstand, AnschlussChip lead resistance, terminalchip T c = 25 C R CC /EE 4 mω Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung I F = 5A, V GE = V, T vj = 25 C forward voltage I F = 5A, V GE = V, T vj = 125 C I F = 5A, di F /dt= 26 A/µs Rückstromspitze V R = 3V, V GE = 1V, T vj = 25 C peak reverse recovery current V R = 3V, V GE = 1V, T vj = 125 C I F = 5A, di F /dt= 26 A/µs Sperrverzögerungsladung V R = 3V, V GE = 1V, T vj = 25 C recovered charge V R = 3V, V GE = 1V, T vj = 125 C I F = 5A, di F /dt= 26 A/µs Ausschaltenergie pro Puls V R = 3V, V GE = 1V, T vj = 25 C reverse recovery energy V R = 3V, V GE = 1V, T vj = 125 C V F I RM Q r E rec 1,25 1,7 V 1,2 V 88 A 94 A 3,2 µc 5,4 µc 1,5 mj 1,5 mj 2 (9)
IGBTModule IGBTModules Charakteristische Werte / characteristic values NTCWiderstand / NTCthermistor min. typ. max. Nennwiderstand rated resistance T c = 25 C R 25 5 kω Abweichung von R 1 T c = 1 C, R 1 = 493Ω R/R deviation of R 1 5 5 % Verlustleistung power dissipation T c = 25 C P 25 2 mw BWert Bvalue R 2 = R 1 exp[b(1/t 2 1/T 1 )] B 25/5 3375 K Thermische Eigenschaften / thermal properties Innerer Wärmewiderstand; DC thermal resistance, juncton to case; DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter R thjc,62 K/W 1,2 K/W Wärmewiderstand; DC thermal resistance, junction to heatsink, DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter R thjh,95 K/W 1,5 K/W λ Paste = 1 W / m*k / λ grease = 1 W / m*k ÜbergangsWärmewiderstand, DC thermal resistance, case to heatsink; DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter R thch,35 K/W,45 K/W λ Paste = 1 W / m*k / λ grease = 1 W / m*k Höchstzulässige Sperrschichttemp. maximum junction temperature T vjmax 15 C Betriebstemperatur operation temperature T op 4 125 C Lagertemperatur storage temperature T stg 4 125 C Mechanische Eigenschaften / mechanical properties Innere Isolation internal insulation Al 2 O 3 CTI comperative tracking index 225 Anpresskraft pro Feder mounting force per clamp F 4..8 N Gewicht weight G 36 g Kriechstrecke creepage distance Luftstrecke clearance distance Anschluss Kühlkörper terminal to heatsink Anschluss Anschluss terminal to terminal Anschluss Kühlkörper terminal to heatsink Anschluss Anschluss terminal to terminal 13,5 mm 5, mm 12, mm 5, mm 3 (9)
IGBTModule IGBTModules Ausgangskennlinie (typisch) output characteristic (typical) I C = f(v CE ) V GE = 15V 1 9 8 Tvj = 25 C Tvj = 125 C 7 6 I C [A] 5 4 3 2 1,,5 1, 1,5 2, 2,5 3, 3,5 V CE [V] Ausgangskennlinienfeld (typisch) I C = f(v CE ) output characteristic (typical) T vj = 125 C 1 9 8 7 6 VGE = 2V VGE = 15V VGE = 12V VGE = 1V VGE = 9V VGE = 8V I C [A] 5 4 3 2 1,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 4 (9)
IGBTModule IGBTModules Übertragungscharakteristik (typisch) transfer characteristic (typical) I C = f(v GE ) V CE = 2V 1 9 8 Tvj = 25 C Tvj = 125 C 7 6 I C [A] 5 4 3 2 1 5 6 7 8 9 1 11 12 13 V GE [V] Durchlasskennlinie der Inversdiode (typisch) I F = f(v F ) forward characteristic of inverse diode (typical) 1 9 8 Tvj = 25 C Tvj = 125 C 7 6 I F [A] 5 4 3 2 1,,2,4,6,8 1, 1,2 1,4 1,6 V F [V] 5 (9)
IGBTModule IGBTModules Schaltverluste (typisch) switching losses (typical) E on = f(i C ), E off = f(i C ), E rec = f(i C ) V GE = ±15V, R G = 3,3Ω, V CE = 3V, T vj = 125 C 3 2,5 Eon Eoff Erec 2 E [mj] 1,5 1,5 1 2 3 4 5 6 7 8 9 1 I C [A] Schaltverluste (typisch) switching losses (typical) E on = f (R G ), E off = f (R G ), E rec = f (R G ) V GE = ±15V, I C = 5A, V CE = 3V, T vj = 125 C 3 Eon Eoff Erec 2 E [mj] 1 5 1 15 2 25 3 35 R G [Ω] 6 (9)
IGBTModule IGBTModules Transienter Wärmewiderstand transient thermal impedance Z thjh = f (t) 1,E+1 Z thjh (K/W) 1,E+ 1,E1 Zth:IGBT 1,E2 Zth:Diode,1,1,1 1 1 t (s) i r i [K/kW]: IGBT τ i [s]: IGBT r i [K/kW]: Diode τ i [s]: Diode 1 57, 2 19, 3 532, 4 171,,75,288,148,2543 75, 21, 885, 33,,56,124,128,2543 Sicherer Arbeitsbereich (RBSOA) reverse bias safe operation area (RBSOA) V GE = ±15V, T j =125 C 12 1 8 IC,Chip IC, Modul I C [A] 6 4 2 2 4 6 V CE [V] 7 (9)
IGBTModule IGBTModules Schaltbild circuit diagram ϑ Gehäusemaße package outline Bohrplan drilling layout 8 (9)
IGBTModule IGBTModules Gehäusemaße Fortsetzung package outline contd. Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 9 (9)
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