GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 27 LD 27 H LD 27 L LD 27 HL Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Gute spektrale Anpassung an Si-Fotoempfänger Gehäusegleich mit SFH 3, SFH 23 Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb Sensorik Diskrete Lichtschranken Features Very highly efficient GaAs-LED High reliability Spectral match with silicon photodetectors Same package as SFH 3, SFH 23 Applications IR remote control of hi-fi and TV-sets, video tape recorders, dimmers Remote control for steady and varying intensity Sensor technology Discrete interrupters Typ Type Bestellnummer Ordering Code Gehäuse Package LD 27 Q6273-Q48 5-mm-LED-Gehäuse (T 3 / 4 ), graugetöntes Epoxy- LD 27 L Q6273-Q833 Gießharz, Lötspieße im 2.54-mm-Raster ( / ) 5 mm LED package (T 3 / 4 ), grey colored epoxy resin LD 27 H Q6273-Q256 lens, solder tabs lead spacing 2.54 mm ( / ) LD 27 HL Q6273-Q838 2-2-22
Grenzwerte Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, t p = µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance T op ; T stg 4 + C V R 5 V I F 3 ma I FSM 3.5 A P tot 22 mw R thja 33 K/W Kennwerte (T A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission I F = ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top Schaltzeiten, I e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Ω Switching times, I e from % to 9% and from 9% to %, I F = ma, R L = 5 Ω λ peak 95 nm λ 55 nm ϕ ± 25 Grad deg. A.25 mm 2 L B.5.5 mm L W H 4. 4.6 mm t r, t f µs 2-2-22 2
Kennwerte (T A = 25 C) Characteristics (cont d) Kapazität, V R = V, f = MHz Capacitance Durchlaßspannung Forward voltage I F = ma, t p = 2 ms I F = A, t p = µs Sperrstrom, V R = 5 V Reverse current Gesamtstrahlungsfluß Total radiant flux I F = ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, I F = ma Temperature coefficient of I e or Φ e, I F = ma Temperaturkoeffizient von V F, I F = ma Temperature coefficient of V F, I F = ma Temperaturkoeffizient von λ, I F = ma Temperature coefficient of λ, I F = ma C o 4 pf V F.3 (.5) V F.9 ( 2.5) V V I R. ( ) µa Φ e 8 mw TC I.55 %/K TC V.5 mv/k TC λ.3 nm/k Gruppierung der Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =. sr Grouping of Radiant Intensity I e in Axial Direction at a solid angle of Ω =. sr Strahlstärke Radiant intensity I F = ma, t p = 2 ms I F = A, t p = µs LD 27 LD 27 L I e I e typ. 5 ( ) 2 LD 27 H LD 27 HL > 6 mw/sr mw/sr 2-2-22 3
Relative Spectral emission I rel = f (λ) Ι rel % 8 6 4 2 OHRD938 88 92 96 nm 6 λ Forward Current I F = f (V F ), single pulse, t p = 2 µs A I F typ. max. OHR4 Radiant Intensity Single pulse, t p = 2 µs 2 Ι e Ι e ( ma) - -2 - Ι e Ι e ma = f (I F ) OHR38 A Ι Permissible Pulse Handling Capability I F = f (τ), T C = 25 C, duty cycle D = parameter 4 ma Ι F 5 3.5..2 D = t p T t p D =.5..2 T F OHR257 Ι F Max. Permissible Forward Current I F = f (T A ) Ι F 2 ma 6 4 2 8 6 4 2 OHO364 2 4 6 8 C TA - 5.5 DC -2.5 2 2.5 3 3.5 4 V 4.5 V Radiation Characteristics I rel = f (ϕ) 4 3 2 5 F ϕ..8 2-5 -4-3 -2 - s t P OHR879 2 6.6 7.4 8.2 9..8.6.4 2 4 6 8 2 2-2-22 4
Maßzeichnung Package Outlines 9. (.354).6 (.24).4 (.6) 2.54 (.) spacing.3 (.5). (.39) 8.2 (.323) Area not flat. (.39).7 (.28) 7.8 (.37) 7.5 (.295) ø5. (.2) ø4.8 (.89) 5.9 (.232) 5.5 (.27).8 (.7).2 (.47) Cathode 4. (.5) 3. (.52) 4.8 (.89) 4.2 (.65).4 (.449). (.433).6 (.24).4 (.6) Chip position GEXY6239.8 (.7).2 (.47) spacing 2.54 (.) Cathode.4 (.6).6 (.24) 29 (.42) 27 (.63).4 (.6).8 (.3) Area not flat Chip position 9. (.354) 8.2 (.323) 7.8 (.37) 7.5 (.295) ø4.8 (.89) ø5. (.2) 4.8 (.89) 4.2 (.65) 5.9 (.232) 5.5 (.27).6 (.24).4 (.6) GEOY6645 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2-2-22 5
Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2-2-22 6