GaAs-IR-Lumineszenzdiode in SM-Gehäuse GaAs Infrared Emitter in SM Package Lead (Pb) Free Product - RoHS ompliant SFH 4211 Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Gute Linearität (I e = f [I F ]) bei hohen Strömen Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Oberflächenmontage geeignet Gegurtet lieferbar SFH 4211 Gehäusegleich mit SFH 32 Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser Industrieelektronik Messen/Steuern/Regeln Automobiltechnik Sensorik Alarm- und Sicherungssysteme IR-Freiraumübertragung Features Very highly efficient GaAs-LED Good Linearity (Ι e = f [I F ]) at high currents D (with modulation) or pulsed operations are possible High reliability High pulse handling capability Suitable for surface mounting (SM) Available on tape and reel SFH 4211 same package as SFH 32 Applications Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission yp ype SFH 4211 Bestellnummer Ordering ode Q651A2515 Gehäuse Package Kathodenkennzeichnung: abgesetzte Ecke cathode marking: beveled edge OPLED 28-8-18 1
Grenzwerte ( A = 25 ) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, τ = µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm 2 hermal resistance junction - ambient mounted on P-board (FR4), padsize 16 mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block hermal resistance junction - soldering point, mounted on metal block Wert Value op ; stg 4 + V R 5 V I F ma I FSM 3 A P tot 16 mw R thja R thjs 45 2 K/W K/W Kennwerte ( A = 25 ) haracteristics Wellenlänge der Strahlung Wavelength at peak emission I F = ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = ma Abstrahlwinkel Half angle Aktive hipfläche Active chip area Abmessungen der aktiven hipfläche Dimensions of the active chip area Wert Value λ peak 95 nm λ 55 nm ϕ ± 6 Grad deg. A.9 mm 2 L B L W.3.3 mm² 28-8-18 2
Kennwerte ( A = 25 ) haracteristics (cont d) Schaltzeiten, Ι e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Ω Switching times, Ι e from % to 9% and from 9% to%, I F = ma, R L = 5 Ω Kapazität apacitance V R = V, f = 1 MHz Durchlassspannung Forward voltage I F = ma, t p = 2 ms I F = 1 A, t p = µs Sperrstrom Reverse current V R = 5 V Gesamtstrahlungsfluss otal radiant flux I F = ma, t p = 2 ms emperaturkoeffizient von I e bzw. Φ e, I F = ma emperature coefficient of I e or Φ e, I F = ma emperaturkoeffizient von V F, I F = ma emperature coefficient of V F, I F = ma emperaturkoeffizient von λ, I F = ma emperature coefficient of λ, I F = ma Wert Value t r, t f.5 µs o 25 pf V F 1.3 ( 1.5) V F 2.3 ( 2.8) V V I R.1 ( 1) µa Φ e 2 mw I.5 %/K V 2 mv/k λ +.3 nm/k Strahlstärke I e in Achsrichtung (gemessen bei einem Raumwinkel Ω =.1 sr) Radiant Intensity I e in Axial Direction (at a solid angle of Ω =.1 sr) Strahlstärke Radiant intensity I F = ma, t p = 2 ms Strahlstärke Radiant intensity I F = 1 A, t p = µs I e min 2.5 I e typ 6. Werte Values mw/sr mw/sr I e typ. 45 mw/sr 28-8-18 3
Relative Spectral Emission I rel = f (λ) Ι rel % 8 OHR1938 Ι Radiant Intensity e Ι e ma = f (I F ) Single pulse, t p = 2 µs Ι e Ι e ma 2 A 1 OHR1551 Permissible Pulse Handling apability I F = f (t p ), duty cycle D = parameter, A = 2 4 Ι ma F 5 t p D = D =.5 t p OHR86 6.1.2 3.1.5 4 5.2 2-1.5 88 92 96 nm 6 Forward urrent I F = f (V F ), single pulse, t p = 2 µs 1 A λ OHR1554-2 -3-2 -1 1 A Max. Permissible Forward urrent I F = f ( A ) 12 ma OHR883 2-5 D -4-3 -2-1 1 2 s t p -1 8 6 R thja = 45 K/W -2 4 2-3 1 2 3 4 5 6 V 8 2 4 6 8 12 V F A Radiation haracteristics S rel = f (ϕ) 4 3 2 OHL166 ϕ 1. 5.8 6 7 8 9.6.4.2 1..8.6.4 2 4 6 8 12 28-8-18 4
Maßzeichnung Package Outlines 3. (.118) 2.6 (.2) 2.3 (.91) 2.1 (.83).1 (.4) (typ.) 2.1 (.83) 1.7 (.67).9 (.35).7 (.28) 4 ±1 A 3.4 (.134) 3. (.118) athode marking (2.4) (.95) 3.7 (.146) 1.1 (.43) 3.3 (.13).5 (.2).18 (.7).12 (.5).6 (.24).4 (.16) GPLY6724 Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign Recommended Solder Pad Reflow Löten Reflow Soldering 2.6 (.2) 1.5 (.59) 4.5 (.177) 2.6 (.2) 1.5 (.59) 4.5 (.177) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist 2 u-fläche > 16 mm u-area > 16 mm 2 OHLPY97 28-8-18 5
Lötbedingungen Vorbehandlung nach JEDE Level 2 Soldering onditions Preconditioning acc. to JEDE Level 2 Reflow Lötprofil für bleifreies Löten (nach J-SD-2) Reflow Soldering Profile for lead free soldering (acc. to J-SD-2) 3 25 2 255 24 217 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max s min OHLA687 + 26-5 245 ±5 +5 235-15 12 s max Ramp Down 6 K/s (max) s max 5 Ramp Up 3 K/s (max) 25 5 15 2 25 s 3 t Wellenlöten (W) (nach E 82) W Soldering (acc. to E 82) 3 25 2 235... 26 1. Welle 1. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY598 15... 13 ca 2 K/s 5 K/s 2 K/s 5 2 K/s Zwangskühlung forced cooling 5 15 2 s 25 t 28-8-18 6
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg www.osram-os.com All Rights Reserved. he information describes the type of component and shall not be considered as assured characteristics. erms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. omponents used in life-support devices or systems must be expressly authorized for such purpose! ritical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 28-8-18 7