GaAlAs-IR-Lumineszenzdiode (88 nm) GaAlAs Infrared Emitter (88 nm) Lead (Pb) Free Product - RoHS Compliant SFH 486 Wesentliche Merkmale GaAlAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit gute spektrale Anpassung an Si-Fotoempfänger Gegurtet lieferbar (im Ammo-Pack) Gruppiert lieferbar Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb Rauchmelder (UL-Freigabe) Sensorik Diskrete Lichtschranken Features Very highly efficient GaAlAs-LED High reliability Spectral match with silicon photodetectors Available on tape and reel (in Ammopack) Available in bins Applications IR remote control of hi-fi and V-sets, video tape recorders, dimmers Remote control for steady and varying intensity Smoke detectors (UL-approval) Sensor technology Discrete interrupters yp ype SFH 486 Bestellnummer Ordering Code Q6273Q94 27-4-3
Grenzwerte ( A = 25 C) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, t p = μs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand hermal resistance Wert Value op ; stg 4 + C V R 5 V I F ma I FSM 2.5 A P tot 2 mw R thja 375 K/W Kennwerte ( A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission I F = ma Spektrale Bandbreite bei 5% von Ι rel Spectral bandwidth at 5% of Ι rel I F = ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Abstand Chipoberfläche bis Gehäusevorderseite Distance chip front to case surface Schaltzeiten, I e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Ω Switching times, Ι e from % to 9% and from 9% to %, I F = ma, R L = 5 Ω Wert Value λ peak 88 nm Δλ 8 nm ϕ ± Grad deg. A.9 mm 2 L B L W.3.3 mm² H 5. 5.7 mm t r, t f.6/.5 μs 27-4-3 2
Kennwerte ( A = 25 C) Characteristics (cont d) Kapazität Capacitance V R = V, f = MHz Durchlassspannung Forward voltage I F = ma, t p = 2 ms I F = A, t p = μs Sperrstrom Reverse current V R = 5 V Gesamtstrahlungsfluss otal radiant flux I F = ma, t p = 2 ms emperaturkoeffizient von I e bzw. Φ e, I F = ma emperature coefficient of I e or Φ e, I F = ma emperaturkoeffizient von V F, I F = ma emperature coefficient of V F, I F = ma emperaturkoeffizient von λ, I F = ma emperature coefficient of λ, I F = ma Wert Value C o 5 pf V F.5 (<.8) 3. (< 3.8) I R. ( ) μa Φ e 25 mw C I.5 %/K C V 2 mv/k C λ.25 nm/k V 27-4-3 3
Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =. sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =. sr Strahlstärke Radiant intensity I F = ma, t p = 2 ms Werte Values I e min 4 I e typ 7 mw/sr Strahlstärke Radiant intensity I F = A, t p = μs I e typ 6 mw/sr 27-4-3 4
Relative Spectral Emission I rel = f (λ) Ι rel % 8 OHR877 Radiant Intensity Single pulse, t p = 2 μs 2 Ι e Ι e (ma) I e I e ma = f (I F ) OHR878 Max. Permissible Forward Current I F = f ( A ) Ι F 25 ma OHR88 6 75 4-5 2-2 25 75 8 85 9 95 nm λ Forward Current I F = f (V F ), single pulse, t p = 2 μs A - -2 OHR88-3 2 3 4 5 6 V 8 V F Radiation Characteristics Ι rel = f(ϕ) 5 4 3 2 ϕ..8-3 2 3 ma 4 Permissible Pulse Handling Capability I F = f (τ), A = 25 C, duty cycle D = parameter 4 ma 3 2..2.5 DC D =.5..2.5 t p D = t p OHR886-5 -4-3 -2 - s 2 t p OHR733 Forward Current vs. Lead Length Between the Package Bottom and the PC-Board I F = f (I), A = 25 C 2 4 6 8 C 2 ma 8 6 4 2 OHR949 5 5 2 25 mm 3 6.6 7.4 8.2 9..8.6.4 2 4 6 8 2 27-4-3 5
Maßzeichnung Package Outlines 2.54 mm spacing.6.4 Anode.8.2 29.5 27.5 Area not flat.8.4 9. 8.2 7.8 7.5 5.7 5. ø5. ø4.8 Chip position 5.9 5.5.6.4 GEX6626 Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign ) Recommended Solder Pad Wellenlöten (W) W Soldering 4.8 (.89) 4 (.57) OHLPY985 Maße in mm (inch) / Dimensions in mm (inch). 27-4-3 6
Lötbedingungen Soldering Conditions Wellenlöten (W) (nach CECC 82) W Soldering (acc. to CECC 82) 3 C 25 2 235 C... 26 C. Welle. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY598 5 ca 2 K/s 5 K/s 2 K/s C... 3 C 5 2 K/s Zwangskühlung forced cooling 5 5 2 s 25 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg www.osram-os.com All Rights Reserved. he information describes the type of component and shall not be considered as assured characteristics. erms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 27-4-3 7