GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Gute spektrale Anpassung an Si-Fotoempfänger Gehäusegleich mit SFH 484 Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb Sensorik Diskrete Lichtschranken Features Very highly efficient GaAs-LED High reliability Spectral match with silicon photodetectors Same package as SFH 484 Applications IR remote control of hi-fi and TV-sets, video tape recorders, dimmers Remote control for steady and varying intensity Sensor technology Discrete interrupters Typ Type Bestellnummer Ordering Code Gehäuse Package LD 274 Q6273-Q3 5-mm-LED-Gehäuse (T 3 / 4 ), graugetöntes Epoxy- LD 274-3 Q6273-Q82 Gießharz, Anschlüsse im 2.54-mm-Raster ( / ), Kathodenkennzeichnung: Kürzerer Lötspieß, flat 5 mm LED package (T 3 / 4 ), grey colored epoxy resin lens, solder tabs lead spacing 2.54 mm ( / ), cathode marking: shorter solder lead, flat 2-2-22
Grenzwerte (T A = 25 C) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, t p = µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance T op ; T stg 4 + C V R 5 V I F ma I FSM 3 A P tot 65 mw R thja 45 K/W Kennwerte (T A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission I F = ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = ma, t p = 2 ms λ peak 95 nm λ 55 nm Abstrahlwinkel Half angle ϕ ± Grad Aktive Chipfläche Active chip area A.9 mm 2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L B L W.3.3 mm Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top H 4.9 5.5 mm Schaltzeiten, I e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Ω Switching times, I e from % to 9% and from 9% to %, I F = ma, R L = 5 Ω t r, t f.5 µs 2-2-22 2
Kennwerte (T A = 25 C) Characteristics (cont d) Kapazität Capacitance V R = V, f = MHz Durchlaßspannung Forward voltage I F = ma, t p = 2 ms I F = A, t p = µs Sperrstrom, V R = 5 V Reverse current Gesamtstrahlungsfluß Total radiant flux I F = ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, I F = ma Temperature coefficient of I e or Φ e, I F = ma Temperaturkoeffizient von V F, I F = ma Temperature coefficient of V F, I F = ma Temperaturkoeffizient von λ, I F = ma Temperature coefficient of λ, I F = ma C o 25 pf V F.3 (.5) V F.9 ( 2.5) V V I R. ( ) µa Φ e 5 mw TC I.55 %/K TC V.5 mv/k TC λ +.3 nm/k 2-2-22 3
Gruppierung der Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =. sr Grouping of Radiant Intensity I e in Axial Direction at a solid angle of Ω =. sr Strahlstärke Radiant intensity I F = ma, t p = 2 ms I e min 5 I e max LD 274 LD 274-2 ) LD 274-3 5 8 mw/sr mw/sr Strahlstärke Radiant intensity I F = A, t p = µs I e typ. 35 6 8 mw/sr ) Nur auf Anfrage lieferbar. ) Available only on request. 2-2-22 4
Relative Spectral Emission Ι rel = f (λ) Ι rel % 8 OHRD938 Radiant Intensity Ι e ma = f (I F ) Single pulse, t p = 2 µs 2 Ι e Ι e ( ma) Ι e OHR38 Max. Permissible Forward Current I F = f (T A ) 2 I ma F OHR883 6 8 R thja = 45 K/W 6 4 4 2 2 88 92 96 nm 6 λ Forward Current I F = f (V F ), single pulse, t p = 2 µs A I F typ. max. OHR4 - -2 - A Ι Permissible Pulse Handling Capability I F = f (τ), T C 25 C, duty cycle D = parameter 4 Ι ma F 5 t p D = T D =.5..2 t p T F OHR86 Ι F 2 4 6 8 C2 T A 3..5-5.2.5-2.5 2 2.5 3 3.5 4 V 4.5 V Radiation Characteristics, Ι rel = f (ϕ) F 2-5 DC -4-3 -2-2 s t p 4 3 2 OHR882 ϕ. 5.8 6.6 7.4 8.2 9..8.6.4 2 4 6 8 2 2-2-22 5
Maßzeichnung Package Outlines 9. (.354) 8.2 (.323) 5.9 (.232) 5.5 (.27).6 (.24).4 (.6) 2.54 (.) spacing Area not flat.8 (.3).4 (.6) 7.8 (.37) 7.5 (.295) ø5. (.2) ø4.8 (.89).8 (.7).2 (.47) 29 (.42) 27 (.63) Cathode Chip position 5.7 (.224) 5. (.2).6 (.24).4 (.6) GEXY65 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2-2-22 6