CATALOGUE Radiation Detectors CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Erfurt, Germany
Issued by: CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH The information contained in this product guide corresponds to the facts known up to its publication. Subject to modifications based on technical innovation. All information and calculations have been reviewed conscientiously. Status: 03-2011 CDID: CPI011-2011
Seite 3 Radiation detectors Area of application detection of high energy particles UV, X-Ray, alpha, beta, gamma high energy physics medicine material analysis Basic Sensitive Elements pad detectors micro strip detectors pitch 50 microns pixel detectors minimum size 50 microns 150 microns thinned detector chips 50... 200 microns avalanche diode arrays - under development minimum size 10 microns 10 microns pitch 20 microns Basic Wafer Process Features double side processing double sided alignment ± 1 µm radiation hardening by defect engineering oxygen enriched wafers implanted pn junctions one or two metalization layers different passivation options oxid, nitride parylene or other organic hermetization -under developmentdefect engineering special dicing capabilities for large or non-orthogonal chips
Seite 4 Substrates p-typ and n-typ FZ wafers 1,000... 30,000 Ohmcm p-typ and n-typ CZ resp MCZ wafers 500 Ohmcm epitaxial layers thickness 20... 150 microns resistivity 50... 500 Ohmcm silicon wafer thickness (150) 200 microns Biasing punch-through FOXFET implanted resistors poly-silicon resistors Isolating Features Read out ac coupled detector structures dc coupled detector structures p-spray moderated p-spray p-stop etched trenches multi-guard ring Custom specific Design p-in-n, n-in-p, n-in-n wafer chip sensor Characteristics leakage current 1 na / cm² @ 20 C breakdown voltage 80... 500 V Special Offers Multi-Chip resp. Multi-Project-Wafer Services (all substrate types) Reference Applications Microstrip Detectors: HERA-B, H1-PHI, ATLAS WEDGE, D0, MEGA, AMS02, STAR/N768, ALICE-S2 Pixel: ATLAS, CMS, XPAD, PHENIX
Seite 5 Standard Detector Chips Pad Diode Chip active area size 2.5 mm 2.5 mm chip size 6.95 mm 6.95 mm leakage current 0.2 na @ 20 C p-in-n and n-in-p available FZ, CZ and epi-layer available options: passivation SiO 2 or Si 3 N 4 chip thickness 285... 525 microns more detailed parametres on request pad-diode n-typ NTYPPD21
Seite 6 Big Pad Diode Chip active area size 5.00 mm 5.00 mm chip size 10.0 mm 10.0 mm leakage current 0.4 na @ 20 C p-in-n and n-in-p available FZ, CZ and epi-layer available options: passivation SiO 2 or Si 3 N 4 chip thickness 285... 525 microns more detailed parametres on request pad-diode n-typ NTYPPD11
Seite 7 AC coupled MicroStrip MiniDetector chip size 10.0 mm 10.0 mm single side detector n-in-n available strip isolation by moderated p-spray strip biasing by implanted resistors and punch through mini detector n-in-n with p-spray-isolation number of strips 100 strip length 8.0 mm strip width 18 microns strip pitch 100 microns Characteristics leakage current 1 na @ 20 C breakdown voltage > 300 V
Seite 8 DC coupled MicroStrip MiniDetector double sided detector orthogonal strips chip size 15.5 mm 14.3 mm double sided MicroStrip Detector MDR01 n-side n-in-n strips strip number 129 strip length 14.2 mm strip width 40 µm strip pitch 100 µm pad size 250 microns 60 microns strip isolation p-stopp in combination with p-spray strip biasing FOXFET and punch through detail MDR01: n-side
Seite 9 detail MDR01: p-side p-side p-in-n strips number of strips 2 rows of 129 main strips between 2 main strips 1 inter-strip (balanced charge mode) strip length 12.9 mm strip width 12 µm strip pitch 27.5 µm # 55 µm (main strips) pad size 1 st row 250 microns 60 microns 2 nd row 250 microns 34 microns strip biasing FOXFET and punch through Pixel - MiniDetektors single-side detectors n-in-p and n-in-n up to 6inch - under development - Avalange-Diode MiniDetectora and Detector Arrays APD small size elements and arrays - under development -
Seite 10 Double Sided MicroStrip MiniDetector Reference Chip Design Examples AMS02 DC coupled Detectors orthogonal strips balanced strip architecture strip isolation by moderated p-spray strip biasing by FOXFET and alternatively by punch-through 4inch n-typ FZ wafers, 300µm thick, 4 6 kohmcm chip size after dicing width 72.000 + 0.050 mm height 41.350 + 0.050 mm p-side of the detector number of strips 2 rows of 642 main strips between 2 main strips 1 inter-strip (balanced charge mode) strip length 39.960 mm strip width 12 microns strip pitch 27.5 microns # 55 microns (main strips) pad size 1 st row 250 microns 60 microns 2 nd row 250 microns 34 microns
Seite 11 n-side of the detector number of strips 384 strip length 70.640 mm strip width 40 microns strip pitch 104 microns isolated by 3 boron-strips each 8 microns pad size 250 microns 60 microns
Seite 12 ALICE-S2 AC coupled Detectors stereo angle 7 strip isolation by moderated p-spray metal field plate strip biasing by punch-through 4inch n-typ FZ wafers, 285µm thick, 4 6 kohmcm chip size after dicing width 75.000 + 0.050 mm height 42.000 + 0.050 mm p-side of the detector number of strips 768 strip length 40 mm strip width 40 microns metal field plate 5 microns strip pitch 95 microns dc test pad size 100 microns 50 microns ac pad size 200 microns 60 microns
Seite 13 n-side of the detector strip number 768 strip length 40 mm strip width 40 microns strip pitch 95 microns dc test pad size 100 microns 50 microns ac pad size 200 microns 60 microns
Seite 14 Contact Mr. Ralf Röder Product Manager Radiation Detectors Phone: +49-361-663-1461 Mobile: +49-171-5510794 Fax: +49-361-663-1476 email: rroeder@cismst.de Address CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Konrad-Zuse-Straße 14 D 99099 Erfurt Germany Phone: +49-361-663-1410 Fax: +49-361-663-1413 email: info@cismst.de