Schnelle GaAs-IR-Lumineszenzdiode (95 nm) High-Speed GaAs Infrared Emitter (95 nm) SFH 42 SFH 425 SFH 42 SFH 425 Wesentliche Merkmale GaAs-LED mit sehr hohem Wirkungsgrad Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Sehr kurze Schaltzeiten (1 ns) Für Oberflächenmontage geeignet Gegurtet lieferbar SFH 42 Gehäusegleich mit SFH 32 SFH 425 Gehäusegleich mit SFH 325 SFH 425: Nur für IR-Reflow-Lötung geeignet. Anwendungen Schnelle Datenübertragung mit Übertragungsraten bis 1 Mbaud (IR Tastatur, Joystick, Multimedia) Analoge und digitale Hi-Fi Audio- und Videosignalübertragung Batteriebetriebene Geräte (geringe Stromaufnahme) Anwendungen mit hohen Zuverlässigkeitsansprüchen bzw. erhöhten Anforderungen Alarm- und Sicherungssysteme IR Freiraumübertragung Features Very highly efficient GaAs-LED DC (with modulation) or pulsed operations are possible High reliability High pulse handling capability Very short switching times (1 ns) Suitable for surface mounting (SMT) Available on tape and reel SFH 42 same package as SFH 32 SFH 425 same package as SFH 325 SFH 425: Suitable only for IR-reflow soldering. Applications High data transmission rate up to 1 Mbaud (IR keyboard, Joystick, Multimedia) Analog and digital Hi-Fi audio and video signal transmission Low power consumption (battery) equipment Suitable for professional and high-reliability applications Alarm and safety equipment IR free air transmission 21-4-19 1
Typ Type SFH 42 SFH 425 Bestellnummer Ordering Code Q6272-P978 Q6272-P5165 Gehäuse Package Kathodenkennzeichnung: abgesetzte Ecke Cathode marking: bevelled edge TOPLED SIDELED Grenzwerte (T A = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, t p = 1 µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm 2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Wert Value T op ; T stg 4 + 1 C V R 3 V I F (DC) 1 ma I FSM 2.2 A Einheit Unit P tot 18 mw R thja R thjs 45 2 K/W K/W 21-4-19 2
Kennwerte (T A = 25 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei, R L = 5 Ω Switching times, Ι e from 1% to 9% and from 9% to1%,, R L = 5 Ω Durchlaßspannung, Forward voltage I F = 1 A, t p = 1 µs Sperrstrom, Reverse current V R = 3 V Gesamtstrahlungsfluß, Total radiant flux Temperaturkoeffizient von I e bzw. Φ e, I F = 1 ma Temperature coefficient of I e or Φ e, I F = 1 ma Temperaturkoeffizient von V F, I F = 1 ma Temperature coefficient of V F, I F = 1 ma Temperaturkoeffizient von λ, I F = 1 ma Temperature coefficient of λ, I F = 1 ma Wert Value λ peak 95 nm λ 4 nm Einheit Unit ϕ ± 6 Grad deg. A.9 mm 2 L B L W.3.3 mm t r, t f 1 ns V F V F 1.5 ( 1.8) 3.2 ( 4.) V V I R.1 ( 1) µa Φ e 28 mw TC I.44 %/K TC V 1.5 mv/k TC λ +.2 nm/k 21-4-19 3
Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Bezeichnung Parameter Strahlstärke Radiant intensity Strahlstärke Radiant intensity I F = 1 A, t p = 1 µs I e min. I e typ. 4 8.5 Werte Values Einheit Unit mw/sr mw/sr I e typ. 55 mw/sr 21-4-19 4
Relative Spectral Emission I rel = f (λ) I Radiant Intensity e I e 1 ma = f (I F ) Single pulse, t p = 2 µs Max. Permissible Forward Current I F = f (T A ) Ι erel 1 8 OHF777 1 2 Ι e Ι e (1 ma) OHF89 Ι F 12 ma 1 OHF359 8 6 1 R thja = 375 K/W 6 4 1-1 4 2 1-2 2 8 85 9 95 1 nm 11 λ 1-3 1 1 1 1 2 1 3 ma 1 4 Ι F 2 4 6 8 1 C 12 T A Forward Current I F = f (V F ) single pulse, t p = 2 µs Permissible Pulse Handling Capability I F = f (τ), T A = 25 C, duty cycle D = parameter 1 4 ma Ι F 1 3 OHF784 1 1 A I F 5 t D = T P t P T OHF4 I F 1 2 1 1 1 1-1 1 5 D =.5.1.2.5.1.2.5 1 1-2 1-3 -1 1.5 1 1.5 2 2.5 3 3.5 V 4.5 1-5 1-4 1-3 1-2 1-1 1 1 1 s 1 2 V F t p Radiation Characteristics I rel = f (ϕ 4 3 2 1 OHL166 ϕ 1. 5.8 6 7 8 9.6.4.2 1 1..8.6.4 2 4 6 8 1 12 21-4-19 5
Maßzeichnung Package Outlines SFH 42 3. (.118) 2.6 (.12) 2.3 (.91) 2.1 (.83).1 (.4) (typ.) 2.1 (.83) 1.7 (.67).9 (.35).7 (.28) 3.4 (.134) 3. (.118) Cathode marking (2.4) (.95) 4 ±1 3.7 (.146) 1.1 (.43) 3.3 (.13).5 (.2).18 (.7).12 (.5).6 (.24).4 (.16) GPLY6724 SFH 425 (2.4 (.94)) 2.8 (.11) 2.4 (.94) 4.2 (.165) 3.8 (.15) 1.1 (.43).7 (.28) (2.85 (.112)) Cathode 2.54 (.1) spacing.9 (.35) Anode Cathode marking (1.4 (.55)) (2.9 (.114)) (R1) (.3 (.12)) 3.8 (.15) 3.4 (.134) 4.2 (.165) 3.8 (.15) GPLY688 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch) 21-4-19 6
Löthinweise Soldering Conditions Bauform Types Tauch-, Schwall- und Schlepplötung Dip, Wave and Drag Soldering Reflowlötung Reflow Soldering Lötbadtemperatur Maximal zulässige Lötzeit Lötzonentemperatur Maximale Durchlaufzeit Temperature of the Soldering Bath Max. Perm. Soldering Time Temperature of Soldering Zone Max. Transit Time TOPLED 26 C 1 s 245 C 1 s SIDELED 245 C 1 s Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 21-4-19 7