Technische Information / Technical Information BSM200GA120DLC. T C =25 C, Transistor P tot 1470 W

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1 s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage V CES 1 V Kollektor-Dauergleichstrom T C = C I C,nom. A DC-collector current T C = 25 C I C 37 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t P = 1 ms, T C = C I CRM A Gesamt-Verlustleistung total power dissipation T C =25 C, Transistor P tot 147 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES +/- 2V V Dauergleichstrom DC forward current I F A Periodischer Spitzenstrom repetitive peak forw. current t P = 1 ms I FRM A Grenzlastintegral der Diode I 2 t - value, Diode Isolations-Prüfspannung insulation test voltage V R = V, t p = 1ms, T Vj = 125 C I 2 t 6,84 ka 2 s RMS, f = 5 Hz, t = 1 min. V ISOL 2,5 kv Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung I C = A, V GE = 15V, T vj = 25 C V CE sat - 2,1 2,6 V collector-emitter saturation voltage I C = A, V GE = 15V, T vj = 125 C - 2,4 t.b.d. V Gate-Schwellenspannung gate threshold voltage I C = 8mA, V CE = V GE, T vj = 25 C V GE(th) 4,5 5,5 6,5 V Gateladung gate charge V GE = -15V...+15V Q G - t.b.d. - µc Eingangskapazität input capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C ies nf Rückwirkungskapazität reverse transfer capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C res - t.b.d. - nf Kollektor-Emitter Reststrom V CE = 1V, V GE = V, T vj = 25 C I CES µa collector-emitter cut-off current V CE = 1V, V GE = V, T vj = 125 C µa Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES - - na prepared by: Mark Münzer date of publication: approved by: Jens Thurau revision: 1 1(8) DB V.xls

2 s Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) I C = A, V CC = 6V turn on delay time (inductive load) V GE = ±15V, R G = 4,7Ω, T vj = 25 C t d,on -,9 - µs V GE = ±15V, R G = 4,7Ω, T vj = 125 C -,9 - µs Anstiegszeit (induktive Last) I C = A, V CC = 6V rise time (inductive load) V GE = ±15V, R G = 4,7Ω, T vj = 25 C t r -,9 - µs V GE = ±15V, R G = 4,7Ω, T vj = 125 C -,1 - µs Abschaltverzögerungszeit (ind. Last) I C = A, V CC = 6V turn off delay time (inductive load) V GE = ±15V, R G = 4,7Ω, T vj = 25 C t d,off -,54 - µs V GE = ±15V, R G = 4,7Ω, T vj = 125 C -,59 - µs Fallzeit (induktive Last) I C = A, V CC = 6V fall time (inductive load) V GE = ±15V, R G = 4,7Ω, T vj = 25 C t f -,6 - µs V GE = ±15V, R G = 4,7Ω, T vj = 125 C -,9 - µs Einschaltverlustenergie pro Puls I C = A, V CC = 6V, V GE = 15V turn-on energy loss per pulse R G = 4,7Ω, T vj = 125 C, L S = 9nH E on mws Abschaltverlustenergie pro Puls I C = A, V CC = 6V, V GE = 15V turn-off energy loss per pulse R G = 4,7Ω, T vj = 125 C, L S = 9nH E off mws Kurzschlußverhalten t P 1µsec, V GE 15V, R G = 4,7Ω SC Data T Vj 125 C, V CC =9V, V CEmax =V CES -L sce di/dt I SC A Modulinduktivität stray inductance module L sce nh Modul Leitungswiderstand, Anschlüsse Chip module lead resistance, terminals chip T C =25 C R CC +EE -,5 - mω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung I F = A, V GE = V, T vj = 25 C V F - 1,8 2,3 V forward voltage I F = A, V GE = V, T vj = 125 C - 1,7 t.b.d. V Rückstromspitze I F = A, - di F /dt = 21A/µsec peak reverse recovery current V R = 6V, VGE = -15V, T vj = 25 C I RM A V R = 6V, VGE = -15V, T vj = 125 C A Sperrverzögerungsladung I F = A, - di F /dt = 21A/µsec recovered charge V R = 6V, VGE = -15V, T vj = 25 C Q r µas V R = 6V, VGE = -15V, T vj = 125 C µas Abschaltenergie pro Puls I F = A, - di F /dt = 21A/µsec reverse recovery energy V R = 6V, VGE = -15V, T vj = 25 C E rec mws V R = 6V, VGE = -15V, T vj = 125 C mws 2(8) DB V.xls

3 s Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC R thjc - -,85 K/W thermal resistance, junction to case Diode/Diode, DC - -,15 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λ Paste = 1 W/m * K / λ grease = 1 W/m * K R thck -,1 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj C Betriebstemperatur operation temperature T op C Lagertemperatur storage temperature T stg C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AL 2 O 3 Kriechstrecke creepage distance 2 mm Luftstrecke clearance 11 mm CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung screw M5 M1 3 6 Nm mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminals M6 2,5 5, Nm terminal connection torque terminals M4 1,1 2, Nm Gewicht weight G 3 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB V.xls

4 s Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V Tj = 25 C Tj = 125 C ,,5 1, 1,5 2, 2,5 3, 3,5 4, V CE [V] Ausgangskennlinienfeld (typisch) I C = f (V CE ) Output characteristic (typical) T vj = 125 C VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V 16 12,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 4(8) DB V.xls

5 s Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = 2V Tj = 25 C Tj = 125 C V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) Tj = 25 C Tj = 125 C 2 I F [A] ,,5 1, 1,5 2, 2,5 3, V F [V] 5(8) DB V.xls

6 s 7 Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) V GE =15V, R gon = R goff = 4,7 Ω, V CE = 6V, T j = 125 C 6 5 Eoff Eon Erec E [mj] Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) V GE =15V, I C = A, V CE = 6V, T j = 125 C 1 9 Eoff Eon Erec 7 E [mj] R G [Ω] 6(8) DB V.xls

7 s 1 Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t),1 Z thjc [K / W],1 Zth:Diode Zth:IGBT,1,1,1, t [sec] i r i [K/kW] : IGBT 9,51 28,77 37,49 9,23 τ i [sec] : IGBT,2,4,48,5 r i [K/kW] : Diode 19,63 51,99 56,73 21,65 τ i [sec] : Diode,2,3,72,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) V GE = 15V, R g = 4,7 Ohm, T vj = 125 C IC,Modul IC,Chip V CE [V] 7(8) DB V.xls

8 s Single Switch 62 M6 28, ,1 ø6, ,4 2 1 IS (8) DB V.xls