BSM300GB120DLC. Technische Information / Technical Information. Höchstzulässige Werte / Maximum rated values

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1 s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage T vj =25 C V CES 12 V Kollektor-Dauergleichstrom T C = 8 C I C,nom. 3 A DC-collector current T C = 25 C I C 625 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t P = 1 ms, T C = 8 C I CRM 6 A Gesamt-Verlustleistung total power dissipation T C = 25 C, Transistor P tot 2,5 kw Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES +/- 2V V Dauergleichstrom DC forward current I F 3 A Periodischer Spitzenstrom repetitive peak forw. current t P = 1 ms I FRM 6 A Grenzlastintegral der Diode I 2 t - value, Diode Isolations-Prüfspannung insulation test voltage V R = V, t p = 1ms, T Vj = 125 C I 2 t 19 k A 2 s RMS, f = 5 Hz, t = 1 min. V ISOL 2,5 kv Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung I C = 3A, V GE = 15V, T vj = 25 C V CE sat - 2,1 2,6 V collector-emitter saturation voltage I C = 3A, V GE = 15V, T vj = 125 C - 2,4 2,9 V Gate-Schwellenspannung gate threshold voltage I C = 12mA, V CE = V GE, T vj = 25 C V GE(th) 4,5 5,5 6,5 V Gateladung gate charge V GE = -15V...+15V Q G - 3,2 - µc Eingangskapazität input capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C ies nf Rückwirkungskapazität reverse transfer capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C res - 1,4 - nf Kollektor-Emitter Reststrom collector-emitter cut-off current V GE = V, T vj = 25 C, V CE = 12V I CES ma Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES na prepared by: MOD-D2; Mark Münzer date of publication: approved by: SM TM; Wilhelm Rusche revision: 3. 1 (9) DB 3.

2 s Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) I C = 3A, V CE = 6V turn on delay time (inductive load) V GE = ±15V, R G = 3,3Ω, T vj = 25 C t d,on -,5 - µs V GE = ±15V, R G = 3,3Ω, T vj = 125 C -,6 - µs Anstiegszeit (induktive Last) I C = 3A, V CE = 6V rise time (inductive load) V GE = ±15V, R G = 3,3Ω, T vj = 25 C t r -,5 - µs V GE = ±15V, R G = 3,3Ω, T vj = 125 C -,7 - µs Abschaltverzögerungszeit (ind. Last) I C = 3A, V CE = 6V turn off delay time (inductive load) V GE = ±15V, R G = 3,3Ω, T vj = 25 C t d,off -,57 - µs V GE = ±15V, R G = 3,3Ω, T vj = 125 C -,57 - µs Fallzeit (induktive Last) I C = 3A, V CE = 6V fall time (inductive load) V GE = ±15V, R G = 3,3Ω, T vj = 25 C t f -,4 - µs V GE = ±15V, R G = 3,3Ω, T vj = 125 C -,5 - µs Einschaltverlustenergie pro Puls I C = 3A, V CE = 6V, V GE = ±15V turn-on energy loss per pulse R G = 3,3Ω, T vj = 125 C, L σ = 6nH E on mj Abschaltverlustenergie pro Puls I C = 3A, V CE = 6V, V GE = ±15V turn-off energy loss per pulse R G = 3,3Ω, T vj = 125 C, L σ = 6nH E off mj Kurzschlußverhalten t P 1µs, V GE 15V, R G = 3,3Ω SC Data T Vj 125 C, V CC =9V, V CEmax =V CES -L σce di/dt I SC A Modulinduktivität stray inductance module Anschlüsse / terminals 2-3 L σce nh Modul Leitungswiderstand, Anschlüsse Chip module lead resistance, terminals chip pro Zweig / per arm, T C =25 C R CC +EE -,6 - mω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung I F = 3A, V GE = V, T vj = 25 C V F - 1,8 2,3 V forward voltage I F = 3A, V GE = V, T vj = 125 C - 1,7 2,2 V Rückstromspitze I F = 3A, - di F /dt = 54A/µs peak reverse recovery current V R = 6V, V GE = -15V, T vj = 25 C I RM A V R = 6V, V GE = -15V, T vj = 125 C A Sperrverzögerungsladung I F = 3A, - di F /dt = 54A/µs recovered charge V R = 6V, V GE = -15V, T vj = 25 C Q r µc V R = 6V, V GE = -15V, T vj = 125 C µc Abschaltenergie pro Puls I F = 3A, - di F /dt = 54A/µs reverse recovery energy V R = 6V, V GE = -15V, T vj = 25 C E rec mj V R = 6V, V GE = -15V, T vj = 125 C mj 2 (9) DB 3.

3 s Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand pro Transistor / per transistor, DC R thjc - -,5 K/W thermal resistance, junction to case pro Diode / per Diode, DC - -,125 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λ Paste = 1 W/m * K / λ grease = 1 W/m * K R thck -,1 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj max C Betriebstemperatur operation temperature T vj op C Lagertemperatur storage temperature T stg C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al 2 O 3 Kriechstrecke creepage distance 2 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube / screw M6 M 3, - 6, Nm Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M6 M 2,5-5, Nm Gewicht weight G 34 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9) DB 3.

4 s 6 Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V 5 Tvj = 25 C Tvj = 125 C 4 I C [A] 3 2,,5 1, 1,5 2, 2,5 3, 3,5 4, V CE [V] Ausgangskennlinienfeld (typisch) I C = f (V CE ) Output characteristic (typical) T vj = 125 C 6 I C [A] VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V 2,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 4 (9) DB 3.

5 s 6 Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = 2V 5 Tvj = 25 C Tvj = 125 C 4 I C [A] V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) 6 5 Tvj = 25 C Tvj = 125 C 4 I F [A] 3 2,,5 1, 1,5 2, 2,5 3, V F [V] 5 (9) DB 3.

6 s Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) V GE =±15V, R G =3,3 Ω, V CE = 6V, T vj = 125 C 9 8 Eoff Eon Erec 7 E [mj] I C [A] Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) V GE =±15V, I C = 3A, V CE = 6V, T vj = 125 C Eoff Eon Erec E [mj] R G [Ω] 6 (9) DB 3.

7 s 1 Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t),1 Z thjc [K / W],1 Zth:Diode Zth:IGBT,1,1,1,1 1 1 t [s] i r i [K/kW] : IGBT 21,2 25,19 2,85,94 τ i [s] : IGBT 6,499E-2 2,61E-2 2,364E-3 1,187E-5 r i [K/kW] : Diode 52,55 62,97 7,13 2,35 τ i [s] : Diode 6,499E-2 2,61E-2 2,364E-3 1,187E-5 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) V GE = ±15V, R G = 3,3 Ω, T vj = 125 C I C [A] 4 3 IC,Modul IC,Chip V CE [V] 7 (9) DB 3.

8 s 8 (9) DB 3.

9 s Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values CTI comperative tracking index typ. 425 Modulinduktivität stray inductance module terminals 2-3 L σce 2 nh Modul Leitungswiderstand, Anschlüsse Chip module lead resistance, terminals chip pro Zweig/per arm T C =25 C R CC +EE,6 mω Gehäusemaße C-Serie Package outline C-series 9 (9) DB 3.

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