Marketing Information FF 600 R 16 KF4

Transkript

1 European Power- Semiconductor and Electronics Company Marketing Information FF R 16 KF4 11,85 55,2 M8 screwing depth max. 8 31, G1 G2 M4 28 screwing depth max. 8 2,5 deep ,5 deep G1 G2 VWK Apr. 1997

2 IGBT-Module Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties FF R 16 KF4 Kollektor-Emitter-Sperrspannung collector-emitter voltage V CES 1 V Kollektor-Dauergleichstrom DC-collector current I C A Periodischer Kollektor Spitzenstrom repetitive peak collector current t p =1 ms I CRM 1 A Gesamt-Verlustleistung total power dissipation t C =25 C, Transistor /transistor P tot 39 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GE ± 2 V Dauergleichstrom DC forward current I F A Periodischer Spitzenstrom repetitive peak forw. current t p =1ms I FRM 1 A Isolations-Prüfspannung insulation test voltage RMS, f=5 Hz, t= 1 min. V ISOL 3,4 kv Charakteristische Werte / Characteristic values: Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage =A, v GE =15V, t vj =25 C v CE sat - 3,5 3,9 V =A, v GE =15V, t vj =125 C - 4,6 5 V Gate-Schwellenspannung gate threshold voltage =4mA, v CE =v GE, t vj =25 C v GE(TO) 4,5 5,5 6,5 V Eingangskapazität input capacity f O =1MHz,t vj =25 C,v CE =25V, v GE =V C ies nf Kollektor-Emitter Reststrom collector-emitter cut-off current v CE =1V, v GE =V, t vj =25 C ES ma v CE =1V, v GE =V, t vj =125 C ma Gate-Emitter Reststrom gate leakage current v CE =V, v GE =2V, t vj =25 C i GES - - na Emitter-Gate Reststrom gate leakage current v CE =V, v EG =2V, t vj =25 C i EGS - - na Einschaltzeit (induktive Last) turn-on time (inductive load) =A,v CE =9V,v L =±15V t on v L =±15V, R G =3,3Ω, t vj =25 C -,8 - µs v L =±15V, R G =3,3Ω, t vj =125 C µs Speicherzeit (induktive Last) storage time (inductive load) =A,v CE =9V,v L =±15V t s v L =±15V, R G =3,3Ω, t vj =25 C - 1,1 - µs v L =±15V, R G =3,3Ω, t vj =125 C - 1,3 - µs Fallzeit (induktive Last) fall time (inductive load) =A,v CE =9V,v L =±15V t f v L =±15V, R G =3,3Ω, t vj =25 C -,25 - µs Charakteristische Werte / Characteristic values Transistor / Transistor v L =±15V, R G =3,3Ω, t vj =125 C -,3 - µs Einschaltverlustenergie pro Puls turn-on energy loss per pulse =A,v CE =9V,v L =±15V E on R G =3,3Ω, t vj =125 C, L S =7nH mws Abschaltverlustenergie pro Puls turn-off energy loss per pulse =A,v CE =9V,v L =±15V E off R G =3,3Ω, t vj =125 C, L S =7nH mws Inversdiode / Inverse diode Durchlaßspannung forward voltage i F =A, v GE =V, t vj =25 C v F - 2,4 2,8 V i F =A, v GE =V, t vj =125 C - 2,2 - V Rückstromspitze peak reverse recovery current i F =A, -di F /dt=3ka/µs I RM v RM =9V, v EG =1V, t vj =25 C A v RM =9V, v EG =1V, t vj =125 C A Sperrverzögerungsladung recovered charge i F =A, -di F /dt=3ka/µs Q r v RM =9V, v EG =1V, t vj =25 C µas Thermische Eigenschaften / Thermal properties v RM =9V, v EG =1V, t vj =125 C µas Innerer Wärmewiderstand thermal resistance, junction to case Transistor, DC, pro Modul / per module R thjc,16 C/W Transistor, DC, pro Zweig / per arm Diode /diode, DC, pro Modul / per module Diode /diode, DC, pro Zweig / per arm,32 C/W,4 C/W,8 C/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Module / per Module R thck,8 C/W pro Zweig / per arm,16 C/W Höchstzul. Sperrschichttemperatur max. junction temperature t vj max 15 C Betriebstemperatur operating temperature t c op C Lagertemperatur storage temperature t stg C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al 2 O 3 Anzugsdrehmoment f. mech. Befestigung / mounting torque terminals M6 / tolerance ±1% M1 3 Nm Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque terminals M4 / tolerance +5/-1% M2 2 Nm terminals M8 Gewicht weight G ca. 15 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection t fg = 1 µs V CC = V v L = ±15V R GF = R GR = 3,3 Ω v CEM = 13 V MK1 A MK2 45 A Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = V CES - 2nH x di c /dt Nm

3 FF R 16 KF4 1 V GE =2 V 15 V 12 V 1 V 9 V 8 V FF R 16 KF4 / 1 Bild / Fig. 1 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) V GE = 15 V t vj = 25 C FF R 16 KF4 / 2 Bild / Fig. 2 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) 1 t vj =125 C 25 C 1 i 1 C FF R 16 KF4 / 3 v GE [V] Bild / Fig. 3 Übertragungscharakteristik (typisch) / Transfer characteristic (typical) V CE = 2 V 5 15 FF R 16 KF4 / 4 Bild / Fig. 4 Rückwärts-Arbeitsbereich / Reverse biased safe operating area t vj = 125 C v LF = v LR = 15 V R G = 3,3 Ω

4 FF R 16 KF Z (th)jc [ C/W] 3 2 Diode IGBT 1 i F FF R 16 KF4 / 5 Bild / Fig. 5 Transienter innerer Wärmewiderstand (DC) / Transient thermal impedance (DC) t [s],5 1 1,5 2 2,5 3 3,5 FF R 16 KF4 / 6 v F [V] Bild / Fig. 6 Durchlaßkennlinie der Inversdiode (typisch) / Forward characteristic of the inverse diode (typical) t vj = 25 C

5 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via / sales & contact. Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via / sales & contact.