NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead (Pb) Free Product - RoHS Compliant

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1 NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead (Pb) Free Product - RoHS Compliant SFH 31 F Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 84 nm bis 18 nm Enge Empfangscharakteristik Geringe Außenabmessungen Gleiche Bauform wie IRED SFH 411 Hoher Koppelfaktor in Lichtschranken mit SFH 411 IR-Filter Leichte Unterscheidbarkeit zwischen SFH 31 F (schwarzes Gehäuse) und SFH 411 (klares Gehäuse) Anwendungen Empfänger in Lichtschranken Bandende-Erkennung (z.b. Videorecorder) Datenübertragung Positionsüberwachung Barcode-Leser Messen/Steuern/Regeln Münzzähler Features Especially suitable for applications from 84 nm to 18 nm Narrow half angle Small outline dimensions Same package as IRED SFH 411 High coupling factor in light barriers with SFH 411 IR filter Easy identification of SFH 31 F (black package) and SFH 411 (clear package) Applications Detector in photointerrupters Tape end detection Data transmission Position sensing Barcode reader For control and drive circuits Coin counters Typ Type SFH 31 F SFH 31 F-2/3/4 Bestellnummer Ordering Code Q6272P573 Q6272P5475 I PCE (ma) (λ = 95 nm, E e =.5 mw/cm 2, V CE = 5 V) >

2 SFH 31 F Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, t < 1 µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, T A = 25 C Total power dissipation Wärmewiderstand Sperrschicht - Umgebung Thermal resistance junction - ambient Wert Value T op ; T stg C V CE V CE (t <2min) 3 7 I C 5 ma I CS 1 ma V EC 7 V Einheit Unit P tot 15 mw R thja 28 K/W V

3 SFH 31 F Kennwerte (T A = 25 C, λ = 95 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1% von S max Spectral range of sensitivity S = 1% of S max Abmessungen der Chip-Fläche Dimension of chip area Bestrahlungsempfindliche Fläche Radiant sensitive area Halbwinkel Half angle Kapazität Capacitance V CE = V, f = 1 MHz, E = V CE = 5 V, f = 1 MHz, E = Dunkelstrom, V CE = 2 V Dark current Fotostrom Photocurrent E e =.5 mw/cm 2,V CE = 5 V Wert Value λ Smax 92 nm λ nm Einheit Unit L B mm mm L W A.11 mm 2 ϕ ± 14 Grad deg. C CE 6.5 pf 3. I CEO 2 ( 5) na I PCE >.4 ma

4 SFH 31 F Bezeichnung Parameter Fotostrom, λ = 95 nm Photocurrent E e =.5 mw/cm 2, V CE = 5 V Anstiegszeit/Abfallzeit Rise and fall time I C = 1 ma, V CC = 5 V, R L = 1 kω Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = I PCEmin 1).3, E e =.5 mw/cm 2, λ = 95 nm Wert Value Einheit Unit I PCE ma t r, 7 t f 9 V CEsat 11 ( 4) mv µs 1) I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) I PCEmin is the min. photocurrent of the specified group

5 SFH 31 F Relative Spectral Sensitivity S rel = f (λ) S rel 1 % OHF377 Photocurrent I PCE = f (E e ), V CE = 5 V Ι 1 1 ma PCE 1 OHF378 Collector-Emitter Capacitance C CE = f (V CE ), f = 1 MHz, E = 7 C pf CE 6 5 OHF nm 11 λ Photocurrent I PCE = f (T A ), V CE = 5 V, normalized to 25 C 1.6 Ι PCE Ι PCE C 1 TA Photocurrent SFH 31 F I PCE = f (V CE ) Ι PCE 2. ma OHF1524 OHF mw/cm 2.5 mw/cm 2.25 mw/cm 2.1 mw/cm mw/cm 1 E e Dark Current I CEO = f (T A ), V CE = 2 V, E = Ι 1 3 na CEO Dark Current I CEO = f (V CE ), E = 1 1 na CEO Ι OHF C 1 TA OHF V 1 2 V CE Total Power Dissipation P tot = f (T A ) 16 P mw tot OHF C 1 T A V 4 V CE V 3 V CE

6 SFH 31 F Maßzeichnung Package Outlines Emitter/ Cathode 16.5 (.65) 16. (.63) R.9 (.35) R.7 (.28).5 (.2) x (.122) 2.9 (.114) 2.2 (.87) 2. (.79) 2.54 (.1) 1.42 (.56) 1.22 (.48).6 (.24).4 (.16) 1.4 (.41).84 (.33) (.7) (.68) 4.1 (.161) 3.9 (.154) 1.4 (.41).84 (.33) 3. (.118) 2.8 (.11).5 (.2).3 (.12).9 (.35).7 (.28) (.63) 1.4 (.55) 1.3 (.51) 1.1 (.43).84 (.33).64 (.25) GEOY6976 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch)

7 SFH 31 F Empfohlenes Lötpaddesign Recommended Solder Pad Wellenlöten (TTW) TTW Soldering 4.8 (.189) 4 (.157) OHLPY

8 SFH 31 F Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C 1. Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY ca 2 K/s 5 K/s 2 K/s 1 1 C C 5 2 K/s Zwangskühlung forced cooling s 25 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered