GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package Lead (Pb) Free Product - RoHS Compliant SFH 421 SFH 426

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GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package Lead (Pb) Free Product - RoHS Compliant SFH 41 SFH 46 SFH 41 SFH 46 Not for new design Replacement: SFH453 (for SFH41)

1 GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package Lead (Pb) Free Product - RoHS Compliant SFH 41 SFH 46 SFH 41 SFH 46 Not for new design Replacement: SFH453 (for SFH41) / SFH456 (for SFH46) Wesentliche Merkmale Features GaAIAs-LED mit sehr hohem Wirkungsgrad Gute Linearität (I e = f [I F ]) bei hohen Strömen Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Oberflächenmontage geeignet Gegurtet lieferbar SFH 41 Gehäusegleich mit SFH 3 SFH 46 Gehäusegleich mit SFH 35 Very highly efficient GaAIAs-LED Good Linearity (I e = f [I F ]) at high currents DC (with modulation) or pulsed operations are possible High reliability High pulse handling capability Suitable for surface mounting (SMT) Available on tape and reel SFH 41 same package as SFH 3 SFH 46 same package as SFH 35 Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb Industrieelektronik Messen/Steuern/Regeln Automobiltechnik Sensorik Alarm- und Sicherungssysteme IR-Freiraumübertragung Applications Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission Typ Type SFH 41 Bestellnummer Ordering Code Q651A118 Gehäuse Package SFH 46 Q651A51 SIDELED Kathodenkennzeichnung: abgesetzte Ecke cathode marking: bevelled edge TOPLED

2 Grenzwerte (T A = 5 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, s, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Symbol Symbol Wert Value T op ; T stg 4 + C V R 5 V I F ma I FSM.5 A Einheit Unit P tot 18 mw R thja R thjs 45 K/W K/W

3 Kennwerte (T A = 5 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission I F = ma, t p = ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = m A Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Schaltzeiten, I e von % auf 9% und von 9% auf %, bei I F = ma, R L = 5 Switching times, e from % to 9% and from 9% to %, I F = ma, R L = 5 Kapazität Capacitance V R = V, f = 1 MHz Durchlassspannung Forward voltage I F = ma, t p = ms I F = 1 A, t p = s Sperrstrom Reverse current V R = 5 V Gesamtstrahlungsfluss Total radiant flux I F = ma, t p = ms Temperaturkoeffizient von I e bzw. e, I F = ma Temperature coefficient of I e or e, I F = ma Temperaturkoeffizient von V F, I F = ma Temperature coefficient of V F, I F = ma Temperaturkoeffizient von, I F = ma Temperature coefficient of, I F = ma Symbol Symbol Wert Value peak 88 nm 8 nm Einheit Unit 6 Grad deg. A.9 mm L B L W.3.3 mm² t r, t f.5 s C o 15 pf V F V F 1.5 ( 1.8) 3. ( 3.8) V V I R.1 ( 1) A e 3 mw TC I.5 %/K TC V mv/k TC +.5 nm/k

4 Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of =.1 sr Bezeichnung Parameter Strahlstärke Radiant intensity I F = ma, t p = ms Strahlstärke Radiant intensity I F = 1 A, t p = s Symbol I e min I e typ Werte Values 4 7 Einheit Unit mw/sr mw/sr I e typ 48 mw/sr

5 Relative Spectral Emission I rel = f () Ι rel % 8 OHR877 Radiant Intensity e ma = f (I F ) Single pulse, t p = s Ι e Ι e (ma) 1 e OHR878 Max. Permissible Forward Current I F = f (T A ) Ι F 1 ma OHR R thja = 45 K/W nm λ Forward Current I F = f (V F ) single pulse, t p = s 1 A Ι F OHR ma 4 Ι F Permissible Pulse Handling Capability I F = f (t p ), T A = 5 C duty cycle D = parameter Ι F 4 ma 3.1. D = OHR C 1 T A -1.5 DC V 8 V F Radiation Characteristics I rel = f ( 4 3 OHL166 ϕ 1. t p D = T t p T s t p Ι F

6 Maßzeichnung Package Outlines SFH (.118).6 (.).3 (.91).1 (.83).1 (.4) (typ.).1 (.83) 1.7 (.67).9 (.35).7 (.8) 4 ±1 A 3.4 (.134) 3. (.118) Cathode marking (.4) (.95) 3.7 (.146) 1.1 (.43) 3.3 (.13).5 (.).18 (.7).1 (.5).6 (.4).4 (.16) C GPLY674 SFH 46 (.4 (.94)).8 (.1).4 (.94) 4. (.165) 3.8 (.15) 1.1 (.43).7 (.8) (.85 (.11)) Cathode.54 (.) spacing.9 (.35) Anode Cathode marking (1.4 (.55)) (.9 (.114)) (R1) (.3 (.1)) 3.8 (.15) 3.4 (.134) C A 4. (.165) 3.8 (.15) GPLY688 Maße in mm (inch) / Dimensions in mm (inch)

7 Empfohlenes Lötpaddesign Recommended Solder Pad Reflow Löten Reflow Soldering SFH 41.6 (.) 1.5 (.59) 4.5 (.177).6 (.) 1.5 (.59) 4.5 (.177) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist Cu-Fläche > 16 mm Cu-area > 16 mm SFH (.146) 3. (.118) 1. (.47) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Maße in mm / Dimensions in mm. Cu-Fläche > 16 mm Cu-area > 16 mm Lötstopplack Solder resist OHLPY

8 Lötbedingungen Soldering Conditions Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level Preconditioning acc. to JEDEC Level (nach J-STD-D.1) (acc. to J-STD-D.1) 3 C T 5 4 C 17 C t P t L T p OHA C 15 t S 5 5 C Profileigenschaften Profile Feature s 3 Bleifreier Aufbau / Pb-Free Assembly (SnAgCu) Empfehlung / Recommendation Grenzwerte / Max. Ratings t Aufheizrate zum Vorwärmen* ) / Ramp-up rate to preheat* ) 5 C to 15 C Zeit t s von T Smin bis T Smax / Time t s from T Smin to T Smax 15 C to C K / s 3 K / s s min. 6 s max. 1 s Aufheizrate zur Spitzentemperatur* ) / K / s 3 K / s Ramp-up rate to peak* ) 18 C to T P Liquidustemperatur T L / 17 C Liquidus temperature T L Zeit t L über T L / Time t L above T L 8 s max. s Spitzentemperatur T P / Peak temperature T P 45 C SFH 41: max. 6 C SFH 46: max. 5 C Verweilzeit t P innerhalb des spezifizierten Spitzentemperaturbereichs T P - 5 K / Time t P within the specified peak temperature range T P - 5 K s min. s max. 3 s Abkühlrate* ) / Ramp-down rate* ) T P to C 3 K / s SFH 41: 6 K / s maximum SFH 46: 4 K / s maximum Zeitspanne von 5 C bis zur Spitzentemperatur / Time from 5 C to peak temperature max. 8 min. Alle Temperaturen beziehen sich auf die Bauteilmitte, jeweils auf der Bauteiloberseite gemessen / All temperatures refer to the center of the package, measured on the top of the package * Steigungsberechnung T/t: t max. 5 s; erfüllt über den gesamten Temperaturbereich / slope calculation T/t: t max. 5 s; fulfillment for the whole T-range

9 Wellenlöten (TTW) (nach CECC 8) TTW Soldering (acc. to CECC 8) T 3 C 5 35 C... 6 C 1. Welle 1. wave s. Welle. wave Normalkurve standard curve Grenzkurven limit curves OHLY ca K/s 5 K/s K/s C C 5 K/s Zwangskühlung forced cooling 5 15 s 5 t

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse, D-9349 Regensburg www.osram-os.com All Rights Reserved.

10 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Osram Opto Semiconductor: SFH 46-Z SFH 41-Z

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