SFH 4542 SFH Features High Power Infrared LED SMR (Surface Mount Radial) package Same package as photodiode SFH 2500 Short switching times

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1 IR-Lumineszenzdiode (94nm) mit hoher Ausgangsleistung in SMR Gehäuse High Power Infrared Emitter (94nm) in SMR Package Lead (Pb) Free Product - RoHS CompliantLead (Pb) Free Product - RoHS SFH 442 SFH 443 SFH 442 SFH 443 Wesentliche Merkmale Infrarot LED mit hoher Ausgangsleistung SMR (Surface Mount Radial) Gehäuse Gehäusegleich mit Fotodiode SFH 2 Kurze Schaltzeiten Anwendungen Sensorik Diskrete Lichtschranken Diskrete Optokoppler Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen und behandelt werden. Features High Power Infrared LED SMR (Surface Mount Radial) package Same package as photodiode SFH 2 Short switching times Applications Sensor technology Discrete interrupters Discrete optocouplers Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC and IEC yp ype Bestellnummer Ordering Code SFH 442 Q611A (typ. 18) SFH 443 Q611A (typ. 18) Strahlstärkegruppierung 1) ( = 1 ma, t p = 2 ms) Radiant Intensity Grouping 1) I e (mw/sr) 1) gemessen bei einem Raumwinkel Ω =.1 sr / measured at a solid angle of Ω =.1 sr

2 Grenzwerte ( A = 2 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Stoßstrom, t p = 6 μs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 2 mm 2 hermal resistance junction - ambient mounted on PC-board (FR4), padsize 2 mm 2 each Kennwerte ( A = 2 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 1 ma Centroid-Wellenlänge der Strahlung Centroid wavelength = 1 ma Spektrale Bandbreite bei % von I max Spectral bandwidth at % of I max = 1 ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Wert Value op, stg C V R V 1 ma SM 1. A Einheit Unit P tot 18 mw R thja 3 K/W Wert Value λ peak 9 nm λ centroid 94 nm Δλ 42 nm Einheit Unit ϕ ± 1 Grad deg. A.9 mm 2 L B L W.3.3 mm²

3 Kennwerte ( A = 2 C) Characteristics (cont d) Bezeichnung Parameter Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei = 1 ma, R L = Ω Switching times, Ι e from 1% to 9% and from 9% to 1%, = 1 ma, R L = Ω Durchlassspannung Forward voltage = 1 ma, t p = 2 ms = 1 A, t p = 1 µs Sperrstrom Reverse current Gesamtstrahlungsfluss otal radiant flux = 1 ma, t p = 2 ms emperaturkoeffizient von I e bzw. Φ e, = 1 ma emperature coefficient of I e or Φ e, = 1 ma emperaturkoeffizient von V F, = 1 ma emperature coefficient of V F, = 1 ma emperaturkoeffizient von λ, = 1 ma emperature coefficient of λ, = 1 ma t r, t f 11 ns V F V F 1. (< 1.8) 2.4 (< 3.) I R Wert Value not designed for reverse operation Einheit Unit V V μa Φ e typ mw C I. %/K C V 3 mv/k C λ +.3 nm/k

4 Strahlstärke I e in Achsrichtung 1) gemessen bei einem Raumwinkel Ω =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =.1 sr Bezeichnung Parameter Strahlstärke Radiant intensity = 1 ma, t p = 2 ms Strahlstärke Radiant intensity = 1 A, t p = 2 μs I e min 63 I e max 12 Werte Values -V -AW -BW Einheit Unit mw/sr mw/sr I e typ mw/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one bin in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics I rel = f (ϕ) ϕ 1 1. OHL

5 Relative Spectral Emission I rel = f (λ) I rel 1 % OHF nm 12 λ Forward Current = f (V F ), single pulse, t p = 1 μs 1 1 A OHF382 Radiant Intensity Single pulse, t p = 2 μs I 1 1 e e (1 ma) I I e I e 1 ma = f ( ) OHF ma 1 Permissible Pulse Handling Capability = f (τ), A = 2 C, duty cycle D = parameter 1.6 A D = t P t P D = OHF3812 Max. Permissible Forward Current = f ( A ), R thja = 3 K/W.11 A OHF C 1 Permissible Pulse Handling Capability = f (τ), A = 8 C, duty cycle D = parameter 1.6 A t D P = t P D = OHF V3 V F s 1 t p s 1 t p

6 Maßzeichnungen Package Outlines SFH (.29). (.217) 2.8 (.11) 2.4 (.94) Chip position 4. (.177) 3.9 (.14) 2. (.81) R 1.9 (.77) 2.7 (.16) 2.4 (.94) ((3.2) (.126)) ((R2.8 (.11)) 3.7 (.146) 3.3 (.13) 2.4 (.1) spacing 14.7 (.79) 13.1 (.16) Cathode 4. (.177) 3.9 (.14) ( ) 7.7 (.33) 7.1 (.28) 4.8 (.189) 4.4 (.173) ((3.2) (.126)) 6. (.236).4 (.213) GEOY696 SFH 443 Chip position 4. (.177) 3.9 (.14) 8. (.31) ((3.2) (.126)) 2. (.81) 7.4 (.291) R 1.9 (.77) ((R2.8 (.11)) 2.7 (.16) 2.4 (.94) 2.4 (.1) spacing 1. (.61) 14.7 (.79) Cathode 4. (.177) 3.9 (.14) 7.7 (.33) 7.1 (.28) 4.8 (.189) 4.4 (.173) ( ) ((3.2) (.126)) 6. (.236).4 (.213) GEOY6961 Maße in mm (inch) / Dimensions in mm (inch)

7 Empfohlenes Lötpaddesign Recommended Solder Pad SFH (.1).3 (.29) 2.4 (.1) Bauteil positioniert Component Location on Pad Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist Lötpad 3 (.118) 7 (.276) 2 Cu-Fläche > 2 mm Cu-area > 2 mm 2 OHFY2449 SFH (.1).9 (.232) 2.4 (.1) Bauteil positioniert Component Location on Pad Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist Lötpad (1 (.39)) 1. (.9).2 (.2) 3 (.118) 7 (.276) Aussparung 4.8 (.191) ±. (.2) Cu-Fläche > 2 mm Cu-area > 2 mm 2 2 OHF24 Maße in mm (inch) / Dimensions in mm (inch)

8 Lötbedingungen Vorbehandlung nach JEDEC Level 3 Soldering Conditions Preconditioning acc. to JEDEC Level 3 Reflow Lötprofil für bleifreies Löten (nach J-SD-2C) Reflow Soldering Profile for lead free soldering (acc. to J-SD-2C) 3 C C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max 1 s min OHLA687 + C 26 C - C 24 C ± C + C 23 C - C 1 1 Ramp Up 3 K/s (max) 2 C 12 s max 1 s max Ramp Down 6 K/s (max) min. condition for IR Reflow Soldering: solder point temperature 23 C for at least 1 sec s 3 t Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93 Regensburg All Rights Reserved. he information describes the type of component and shall not be considered as assured characteristics. erms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

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