Engwinklige LED im MIDLED-Gehäuse (940 nm) Narrow beam LED in MIDLED package (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4641 SFH 4646

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1 Engwinklige LED im MIDLED-Gehäuse (94 nm) Narrow beam LED in MIDLED package (94 nm) Lead (Pb) Free Product - RoHS Compliant SFH 464 SFH 4646 SFH 464 SFH 4646 Wesentliche Merkmale Infrarot LED mit hoher Ausgangsleistung Kurze Schaltzeiten Enger Abstrahlwinkel (± ) Geringe Bauhöhe Als oplooker und Sidelooker einsetzbar SFH 464: Gurtung als oplooker SFH 4646: Gurtung als Sidelooker Anwendungen Infrarotbeleuchtung für Kameras IR-Datenübertragung Sensorik in der Automobiltechnik Fernsteuerung Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 68- und 647 behandelt werden. Features High Power Infrared LED Short switching times Narrow halfangle (± ) Low profile component Usable as top-looking and side-looking device SFH 464: aping as oplooker SFH 4646: aping as Sidelooker Applications Infrared Illumination for cameras IR Data ransmission Automotive sensors Remote controls Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 68- and IEC 647. yp ype SFH 464 SFH 4646 Bestellnummer Ordering Code Q6A898 Q6A899 Strahlstärkegruppierung ) ( = 7 ma, t p = ms) Radiant Intensity Grouping ) I e (mw/sr) 6 (typ. 4) 6 (typ. 4) ) gemessen bei einem Raumwinkel Ω =. sr / measured at a solid angle of Ω =. sr 9-9-8

2 Grenzwerte ( A = C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Stoßstrom, t p = μs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 6 mm hermal resistance junction - ambient mounted on PC-board (FR4), padsize 6 mm each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block hermal resistance junction - soldering point, mounted on metal block Kennwerte ( A = C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 7 ma Centroid-Wellenlänge der Strahlung Centroid wavelength = 7 ma Spektrale Bandbreite bei % von I max Spectral bandwidth at % of I max = 7 ma Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Wert Value op, stg 4 + C V R V 7 ma SM 7 ma Einheit Unit P tot 4 mw R thja R thjs 38 Wert Value K/W K/W λ peak 9 nm λ centroid 94 nm Δλ 4 nm Einheit Unit ϕ ± Grad deg. A.4 mm 9-9-8

3 Kennwerte ( A = C) Characteristics (cont d) Bezeichnung Parameter Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, I e von % auf 9% und von 9% auf %, bei = 7 ma, R L = Ω Switching times, Ι e from % to 9% and from 9% to %, = 7 ma, R L = Ω Durchlassspannung Forward voltage = 7 ma, t p = ms = ma, t p = µs Sperrstrom Reverse current Gesamtstrahlungsfluss otal radiant flux = 7 ma, t p = ms emperaturkoeffizient von I e bzw. Φ e, = 7 ma emperature coefficient of I e or Φ e, = 7 ma emperaturkoeffizient von V F, = 7 ma emperature coefficient of V F, = 7 ma emperaturkoeffizient von λ, = 7 ma emperature coefficient of λ, = 7 ma L B L W.. mm² t r, t f ns V F V F.6 (<.).4 (< 3.) I R Wert Value not designed for reverse operation Einheit Unit V V μa Φ e typ 33 mw C I. %/K C V 3. mv/k C λ +.3 nm/k

4 Strahlstärke I e in Achsrichtung ) gemessen bei einem Raumwinkel Ω =. sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =. sr Bezeichnung Parameter Strahlstärke Radiant intensity = 7 ma, t p = ms Strahlstärke Radiant intensity = ma, t p = µs ) I e min 6 I e max 3 Werte Values -S - -U -V Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner :) / Only one bin in one packing unit (variation lower :) Einheit Unit mw/sr mw/sr I e typ mw/sr Abstrahlcharakteristik Radiation Characteristics I rel = f (ϕ) 4 3 ϕ. OHF

5 Relative Spectral Emission I rel = f (λ) I rel % nm λ Forward Current = f (V F ) Single pulse, t p = μs A OHF434 OHF388 Radiant Intensity Single pulse, t p = μs I e I e (7 ma) - I e I e 7 ma = f ( ) OHF387-3 ma Permissible Pulse Handling Capability = f (τ), A = C, duty cycle D = parameter.7 A t D = P t P D = OHF48 Max. Permissible Forward Current = f ( A ), R thja = 38 K/W 8 ma OHF C A Permissible Pulse Handling Capability = f (τ), A = 8 C, duty cycle D = parameter.7 A t D = P t P D = OHF V3 V F s t p s t p 9-9-8

6 Maßzeichnung Package Outlines Maße in mm / Dimensions in mm. Gehäuse / Package Anschlussbelegung Pin configuration MID mit klarem Silikonverguss / MID casted with clear Silicone Pad = Anode / anode Pad = Kathode / cathode

7 Gurtung / Polarität und Lage Method of aping / Polarity and Orientation Verpackungseinheit /Rolle, ø8 mm oder 9/Rolle, ø33 mm Packing unit /reel, ø8 mm or 9/reel, ø33 mm SFH (.4). (.9) Pad Orientation 4 (.7) (.79) ±. (.) 3. (.38) ±. (.).3 (.) ±. (.). (.) ±. (.).7 (.69) 8 (.3) 3.4 (.34) ±. (.).7 (.69) ±. (.) OHAY43 Maße in mm (inch) / Dimensions in mm (inch). SFH (.4). (.9) Pad Orientation.7 (.67) ±. (.) 3.3 (.3) ±. (.6) 4 (.7) (.79) SFH 464 ±. (.) ±. (.6).3 (.9) ±. (.) 3. (.38) ±. (.).7 (.69) 8 (.3) Optical axis/viewing direction.3 (.) ±. (.).4 (.96) ±. (.) 3. (.8) ±. (.) Maße in mm (inch) / Dimensions in mm (inch). OHAY

8 Empfohlenes Lötpaddesign Recommended Solder Pad Design SFH 464 Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Cu-Fläche > 6 mm Cu-area Lötstopplack Solder resist OHF4 SFH 4646 Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Cu-Fläche > 6 mm Cu-area Lötstopplack Solder resist OHF4 Maße in mm / Dimensions in mm. Verarbeitungshinweis: Das Gehäuse ist mit Silikon vergossen. Mechanischer Stress auf der Bauteiloberfläche sollte so gering wie möglich gehalten werden. Handling indication: he package is casted with silicone. Mechanical stress at the surface of the unit should be as low as possible

9 Lötbedingungen Vorbehandlung nach JEDEC Level Soldering Conditions Preconditioning acc. to JEDEC Level Reflow Lötprofil für bleifreies Löten (nach J-SD-C) Reflow Soldering Profile for lead free soldering (acc. to J-SD-C) 3 C C 4 C 7 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile s min 3 s max OHLA687 + C 6 C - C 4 C ± C + C 3 C - C s max Ramp Down 6 K/s (max) s max Ramp Up 3 K/s (max) C s 3 t Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93 Regensburg All Rights Reserved. he information describes the type of component and shall not be considered as assured characteristics. erms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components, may only be used in life-support devices or systems with the express written approval of OSRAM OS. A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered