Engwinklige LED in MIDLED-Gehäuse Narrow beam LED in MIDLED package Lead (Pb) Free Product - RoHS Compliant SFH 4650 SFH 4655

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1 Engwinklige LED in MIDLED-Gehäuse Narrow beam LED in MIDLED package Lead (Pb) Free Product - RoHS Compliant SFH 46 SFH 46 SFH 46 SFH 46 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Infrarot LED mit hoher Ausgangsleistung (4 mw) Emissionswellenlänge typ. 8 nm Enger Abstrahlwinkel ( 2 ) geringe Bauhöhe Als Toplooker und Sidelooker einsetzbar SFH 46: Gurtung als Toplooker SFH 46: Gurtung als Sidelooker Features High Power (4 mw) Infrared LED Peak wavelength typ. 8 nm Narrow halfangle ( 2 ) low profile component Usable as top-looking and side-looking device SFH 46: Taping as Toplooker SFH 46: Taping as Sidelooker Anwendungen Infrarotbeleuchtung für CMOS Kameras IR-Datenübertragung Sensorik in der Automobiltechnik Fernsteuerung Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Norm behandelt werden. Applications Infrared Illumination for CMOS cameras IR Data Transmission Automotive sensors Remote controls Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC Safety of laser products. Typ Type Bestellnummer Ordering Code SFH 46 Q611A172 >16 (typ. 4) SFH 46 Q611A169 >16 (typ. 4) Strahlstärkegruppierung (I F = 1 ma, t p = 2 ms) Radiant Intensity Grouping I e (mw/sr)

2 Vorläufige Daten / Preliminary Data SFH 46, SFH 46 ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device Grenzwerte (T A = 2 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, 1 s, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht 1) Thermal resistance junction Wärmewiderstand Sperrschicht 2) Thermal resistance junction 1) Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm 2 ambient mounted on PC-board (FR4), padsize 16 mm 2 each 2) Lötstelle bei Montage auf Metall-Block soldering point, mounted on metal block Wert Value T op ; T stg C V R V I F 1 ma I FSM 1 A Einheit Unit P tot 18 mw R thja 34 K/W R thjs 18 K/W Kennwerte (T A = 2 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission I F = 1 ma Spektrale Bandbreite bei % von I max Spectral bandwidth at % of I max I F = 1 ma Abstrahlwinkel Half angle Wert Value peak 8 nm 3 nm Einheit Unit 2 Grad deg

3 Vorläufige Daten / Preliminary Data SFH 46, SFH 46 Kennwerte (T A = 2 C) Characteristics (cont d) Bezeichnung Parameter Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, I e von 1% auf 9% und von 9% auf 1%, bei I F = 1 ma, R L = Switching times, e from 1% to 9% and from 9% to 1%, I F = 1 ma, R L = Durchlassspannung Forward voltage I F = 1 ma, t p = 2 ms I F = 1 A, t p = 1 µs Sperrstrom Reverse current V R = 3 V Gesamtstrahlungsfluss Total radiant flux I F = 1 ma, t p = 2 ms Temperaturkoeffizient von I e bzw. e, I F = 1 ma Temperature coefficient of I e or e, I F = 1 ma Temperaturkoeffizient von V F, I F = 1 ma Temperature coefficient of V F, I F = 1 ma Temperaturkoeffizient von, I F = 1 ma Temperature coefficient of, I F = 1 ma A.9 mm 2 L L B W Wert Value.3.3 mm t r, t f 12 ns V F V F 1. ( 1.8) 2.4 (< 3.) V V I R.1 ( 1) A Einheit Unit e 4 mw TC I. %/K TC V.7 mv/k TC +.2 nm/k

4 Vorläufige Daten / Preliminary Data SFH 46, SFH 46 Strahlstärke I e in Achsrichtung 1) gemessen bei einem Raumwinkel =.1 sr Radiant Intensity I e in Axial Direction at a solid angle of =.1 sr Bezeichnung Parameter Strahlstärke Radiant intensity I F = 1 ma, t p = 2 ms Strahlstärke Radiant intensity I F = 1 A, t p = 1 s 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) I e min 16 I e max 32 Werte Values -S -T -U Einheit Unit mw/sr mw/sr I e typ mw/sr 1) Only one group in one packing unit, (variation lower 2:1)

5 Vorläufige Daten / Preliminary Data SFH 46, SFH 46 Relative Spectral Emission I rel = f ( ) 1 % OHL1714 Radiant Intensity Single pulse, t p = 2 s I I e 1 1 e (1 ma) I e I e 1 ma = f (I F ) OHL171 Forward Current I F = f (V F ) Single pulse, t p = 2 s I F 1 A OHL1713 I rel nm 9 Max. Permissible Forward Current I F = f (T A ); R thja = 4 K/W 1) I F 11 ma Radiation Characteristics I rel = f ( ) 6 OHF233 8 T A ma 1 I F Permissible Pulse Handling Capability I F = f (t p ), T A = 2 C duty cycle D = parameter OHF t P A I t F D P = IF T 1. T D = s 1 t p V3 V F 1. OHF ) mounted on PC board FR 4 (pad size 16 mm 2 ) 2-3-8

6 Vorläufige Daten / Preliminary Data SFH 46, SFH 46 Maßzeichnung Package Outlines Silicone area 1) (1.2) Isolating area Pad 1 metallisation Pad 2 metallisation (.8) Backside metallisation Device casted with silicone. 1) Avoid mechanical stress on silicone surface. OHF2423 Maße werden in mm angegeben. Dimensions are specified in mm. Gehäuse package Anschlussbelegung Pin configuration MID mit klarem Silikonverguss MID casted with clear Silicone Pad 1 = Anode/ anode Pad 2 = Kathode / cathode

7 Vorläufige Daten / Preliminary Data SFH 46, SFH 46 Empfohlenes Lötpaddesign Recommended Solderpad Design Bauteil positioniert Component location on pad 1.7 Paddesign for improved heat dissipation Cu-area 2 Solder resist OHF2421 Bauteil positioniert Component location on pad 2.4 Paddesign for improved heat dissipation Cu-area 2 Solder resist OHF

8 Vorläufige Daten / Preliminary Data SFH 46, SFH 46 Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-2B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-2B) T 3 2 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile OHLA s max 1 s min 1 1 Ramp Up 3 K/s (max) 12 s max Ramp Down 6 K/s (max) 1 s max min. condition for IR Reflow Soldering: solder point temperature 23 C for at least 1 sec. Verarbeitungshinweis: Das Gehäuse ist mit Silikon vergossen. Mechanischer Streß auf der Bauteiloberfläche sollte so gering wie möglich gehalten werden. Handling indication: s 3 The package is casted with silicone. Mechanical stress at the surface of the unit should be as low as possible. t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered