Features Very small package: (LxWxH) 3.2 mm x 1.6 mm x 1 mm High optical total power

Transkript

1 IR-Lumineszenzdiode (8 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (8 nm) Lead (Pb) Free Product - RoHS Compliant SFH 46 Wesentliche Merkmale Sehr kleines Gehäuse: (LxBxH) 3.2 mm x.6mm x mm Sehr hohe Gesamtleistung Anwendungen Miniaturlichtschranken Mobile Geräte Näherungssensor Messen/Steuern/Regeln Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot- Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 682- und 6247 behandelt werden. Features Very small package: (LxWxH) 3.2 mm x.6 mm x mm High optical total power Applications Miniature photointerrupters Mobile devices proximity sensor For drive and control circuits Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 682- and IEC yp ype Bestellnummer Ordering Code SFH 46 Q6A (typ. 3) Strahlstärkegruppierung ) ( = 7 ma, t p = 2 ms) Radiant Intensity Grouping ) I e (mw/sr) ) gemessen bei einem Raumwinkel Ω =. sr / measured at a solid angle of Ω =. sr 2--9

2 SFH 46 Grenzwerte ( A = 2 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Stoßstrom, t p = μs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je mm 2 hermal resistance junction - ambient mounted on PC-board (FR4), padsize mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block hermal resistance junction - soldering point, mounted on metal block Elektrostatische Entladung (HBM) Electrostatic discharge (HBM) Kennwerte ( A = 2 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission = 7 ma, t p = ms Schwerpunkts-Wellenlänge der Strahlung Centroid Wavelength = 7 ma, t p = ms Spektrale Bandbreite bei % von I max Spectral bandwidth at % of I max = 7 ma, t p = ms Abstrahlwinkel Half angle Wert Value op, stg C V R V 7 ma SM 7 ma Einheit Unit P tot 4 mw R thja R thjs 4 36 K/W K/W ESD 2 kv Wert Value λ peak 86 nm λ centroid 8 nm Δλ 42 nm Einheit Unit ϕ ± 22 Grad deg

3 SFH 46 Kennwerte ( A = 2 C) Characteristics (cont d) Bezeichnung Parameter Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, I e von % auf 9% und von 9% auf %, bei = 7 ma, R L = Ω Switching times, Ι e from % to 9% and from 9% to %, = 7 ma, R L = Ω Durchlassspannung Forward voltage = 7 ma, t p = 2 ms Sperrstrom Reverse current Gesamtstrahlungsfluss otal radiant flux = 7 ma, t p = 2 ms emperaturkoeffizient von I e bzw. Φ e, = 7 ma emperature coefficient of I e or Φ e, = 7 ma emperaturkoeffizient von V F, = 7 ma emperature coefficient of V F, = 7 ma emperaturkoeffizient von λ, = 7 ma emperature coefficient of λ, = 7 ma A.4 mm 2 L B L W.2.2 mm² t r, t f 2 ns V F.6 (< 2.) I R Wert Value not designed for reverse operation Einheit Unit V μa Φ e typ 4 mw C I. %/K C V.7 mv/k C λ +.3 nm/k

4 SFH 46 Strahlstärke I e in Achsrichtung ) gemessen bei einem Raumwinkel Ω =. sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =. sr Bezeichnung Parameter Strahlstärke Radiant intensity = 7 ma, t p = 2 ms Strahlstärke Radiant intensity = ma, t p = 2 µs I e min 6 I e max 32 Werte Values SFH 46 -S - -U Einheit Unit mw/sr mw/sr I e typ mw/sr ) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:) / Only one bin in one packing unit (variation lower 2:) Abstrahlcharakteristik Radiation Characteristics I rel = f (ϕ) OHF4383 ϕ

5 SFH 46 Relative Spectral Emission I rel = f (λ) I rel % Forward Current = f (V F ) Single pulse, t p = μs A OHF43 nm 9 λ OHF3826 Radiant Intensity I e 7 ma = f ( ) Single pulse, t p = 2 μs e e (7 ma) I I - -2 Permissible Pulse Handling Capability = f (τ), A = 2 C, duty cycle D = parameter.8 A.7 I e OHF ma 3 D = OHF426 Max. Permissible Forward Current = f ( A ), R thja = 4 K/W Permissible Pulse Handling Capability = f (τ), A = 8 C, duty cycle D = parameter 8 ma A.7 OHF C A D = OHF D = D = V3 V F t p s t p s

6 SFH 46 Maßzeichnung Package Outlines Maße in mm/ Dimensions in mm. Gehäuse / Package Farbe / Colour Gehäusemarkierung/ Package marking Gewicht/ Approx. weight Chip LED/ Chip LED Schwarz / black Pad : Kathode / cathode Pad 2: Anode / anode (anode marking).3mg

7 SFH 46 Gurtung / Polarität und Lage Method of aping / Polarity and Orientation Verpackungseinheit 2/Rolle, ø8 mm Packing unit 2/reel, ø8 mm Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign Recommended Solder Pad Reflow Löten Reflow Soldering Maße in mm / Dimensions in mm

8 SFH 46 Lötbedingungen Vorbehandlung nach JEDEC Level 3 Soldering Conditions Preconditioning acc. to JEDEC Level 3 Reflow Lötprofil für bleifreies Löten (nach J-SD-2-D.) Reflow Soldering Profile for lead free soldering (acc. to J-SD-2-D.) 3 C C 27 C t L p OHA42 24 C t S 2 C 2 2 s 3 t Pb-Free (SnAgCu) Assembly Profile Feature Recommendation Max. Ratings Ramp-up Rate to Preheat* ) 2 C to C ime t s from Smin to Smax ( C to 2 C 2 C / sec 3 C / sec s Ramp-up Rate to Peak* ) 2 C / sec 3 C / sec Smax to P Liquidus emperture L 27 C min. 6sec max. 2sec ime t L above L 8sec max. sec Peak emperature P 24 C max. 26 C ime within C of the specified peak temperature P - K Ramp-down Rate* P to C ime 2 C to Peak temperature 2sec min. sec max. 3sec 3 C / sec 6 C / sec maximum All temperatures refer to the center of the package, measured on the top of the component * slope calculation Δ/Δt: Δt max. sec; fulfillment for the whole -range max. 8 min

9 SFH 46 Published by OSRAM Opto Semiconductors GmbH Leibnizstrasse 4, D-93 Regensburg All Rights Reserved. he information describes the type of component and shall not be considered as assured characteristics. erms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered